R5013ANJTL [ROHM]
Power Field-Effect Transistor, 13A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3 PIN;
| 型号： | R5013ANJTL |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 13A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTS, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：6068K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R5013ANJ
ꢀꢀNch 500V 13A Power MOSFET
Datasheet
ꢀꢀ
llOutline
LPT(S)
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VDSS
500V
0.38Ω
±13A
100W
ꢀ
RDS(on)(Max.)
ꢀ
ID
SC-83
ꢀ
PD
TO-263
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llInner circuit
llFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (V
be ±30V.
) guaranteed to
GSS
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
llPackaging speifications
Embossed
Tape
Paking
Reel size (mm)
330
24
llApplication
Tape width (mm)
ype
Switching Power Supply
Basic ordering unit (pcs)
Taping code
1000
TL
Marking
R5013ANJ
llAbsolute maxratings (Ta = 25°C)
Paramete
Symbol
Value
500
Unit
V
VDSS
Drain - Soe voltage
*1
TC = 25°C
TC = 100°C
ID
±13
A
Contindrain current
*1
ID
±6.4
±52
A
*2
ID,pulse
VGSS
ulsd drain current
A
Gate - Source voltage
±30
V
*3
EAS
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
11.3
6.7
mJ
mJ
A
*4
EAR
*3
IAR
6.5
Power dissipation (Tc = 25°C)
PD
Tj
100
W
℃
℃
V/ns
Junction temperature
150
Tstg
Range of storage temperature
Reverse diode dv/dt
-55 to +150
15
dv/dt
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
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1/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llAbsolute maximum ratings
Parameter
Symbol
dv/dt
Conditions
= 400V, I = 13A
Values Unit
50 V/ns
V
DS
D
Drain - Source voltage slope
T = 125℃
j
ꢀ
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llThermal resistance
Vaes
Unit
Parameter
Symbol
Min. Typ. Max.
RthJC
RthJA
Tsold
Thermal resistance, junction - case
-
-
-
-
-
-
1.25 ℃/W
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
80
℃/W
265
℃
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
V)DS
V(BR)DS
Conditions
Unit
V
Min. Typ. Max.
Drain - Source breakdown
voltage
V
= 0V, I 1mA
D
500
-
-
-
-
GS
Drain - Source avalanche
breakdown voltage
V
V
= 0V, I = 13A
580
V
GS
D
= 500V, V = 0V
ꢀ
ꢀ
0.1
-
ꢀ
100
1000
±100
4.5
DS
GS
Zero gate voltag
drain current
T = 25°C
SS
-
μA
j
T = 125°C
-
j
IGSS
Gate - rce leakage current
Gathreshold voltage
V
GS
V
DS
V
GS
= ±30V, V = 0V
-
-
nA
V
DS
VGS(th)
= 10V, I = 1mA
2.5
ꢀ
-
-
D
= 10V, I = 6.5A
ꢀ
ꢀ
D
Static drain - source
on - state resistance
*6
T = 25°C
RDS(on)
0.29 0.38
Ω
Ω
j
T = 125°C
-
0.56
8.4
-
-
j
RG
Gate input resistance
f = 1MHz, open drain
-
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/13
20150730 - Rev.001
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R5013ANJ
Datasheet
Unit
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Transconductance
Symbol
Conditions
Min. Typ. Max.
*6
gfs
V
V
V
= 10V, I = 6.5A
4
-
9
-
-
-
S
DS
GS
DS
D
Ciss
Coss
Crss
= 0V
Input capacitance
1300
500
4
= 25V
Output capacitance
-
pF
f = 1MHz
Reverse transfer capacitance
-
Effective output capacitance,
energy related
Co(er)
Co(tr)
-
-
85.5
86.6
-
-
V
= 0V,
= 0V to 400V
GS
pF
ns
V
DS
Effective output capacitance,
time related
*6
td(on)
V
DD
⋍ 250V, V =
Turn - on delay time
Rise time
-
-
-
-
30
32
90
30
-
-
GS
tr*6
I = 6.5A
D
*6
td(off)
R ⋍ 38.5Ω
Turn - off delay time
Fall time
180
60
L
tf*6
R = 10Ω
G
llGate charge characteristics (Ta = 25°C
Values
Parameter
Symbl
Conons
⋍ V
Unit
Min. Typ. Max.
*6
Qg
Total gate charge
V
-
-
-
-
35
8
-
-
-
-
DD
*6
Qgs
I = 13A
nC
V
Gate - Source charge
Gate - Drain charg
Gate plateau volt
*6
Qgd
V
= 10V
15
5.7
GS
DD
Vtea)
V
⋍ 250V, I = 13A
D
*1 Limionly by maximum temperature allowed.
*2 w ≤ 10μs, Duty cycle ≤ 1%
L ⋍ 500μH, V = 50V, R = 25Ω, starting T = 25°C
DD
G
j
*4 L ⋍ 500μH, V = 50V, R = 25Ω, starting T = 25°C, f = 10kHz
DD
G
j
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/13
20150730 - Rev.001
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R5013ANJ
Datasheet
Unit
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Min.
-
Typ.
Max.
13
Inverse diode continuous,
forward current
*1
IS
-
A
A
T = 25℃
C
Inverse diode direct current,
pulsed
*2
ISM
-
-
*6
VSD
V
= 0V, I = 13A
S
Forward voltage
-
-
-
-
1.5
V
ns
μC
A
GS
*6
trr
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
88
.3
-
-
-
I = 13A
S
*6
Qrr
di/dt = 100A/μs
*6
Irrm
22.1
Peak rate of fall of reverse
recovery current
dirr/dt
T = 25℃
j
-
600
-
A/μs
llTypical transient thermal characteristics
ꢀ ꢀ ꢀ ꢀ ꢀ
Symbol
Rth1
Value
0.0736
0.284
0.69
nit
Symbol
Cth1
Value
0.00198
0.00703
0.19
Unit
Rth2
Cth2
K/W
Ws/K
Rth3
Cth3
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transiermal ꢀꢀꢀ
ꢀꢀꢀꢀResistance vs. Pulse Width
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.4 Avalanche Current vs. Inductive Load
Fig.5 Avalanche Power Losses
Fig.6 Avalanche Energy Dng Curve
ꢀꢀꢀꢀꢀꢀꢀvs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Fig.8 Typical Output Characteristics(II)
Fig.9 Tj = 150°C Typical t ꢀꢀꢀꢀꢀ
ꢀꢀCharacteristics (I)
Fig.10 Tj = 150°C Typical Output ꢀꢀꢀꢀꢀꢀ
ꢀꢀCharacteristics (II)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.11 Breakdown Voltage vs. ꢀꢀꢀꢀꢀꢀꢀ
Fig.12 Typical Transfer Characteristics
ꢀJunction Temperature
Fig.13 Gate Threshold Vovs.
Fig.14 Transconductance vs. Drain Current
ꢀJunction Temperatre
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© 2015 ROHMCo., Ltd. All rights reserved.
8/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
ꢀResistance vs. Junction Temperature
Fig.17 Static Drain - Sourn - State
ꢀResistance vs. Dran Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.18 Typical Capacitance vs. Drain -
Fig.19 Coss Stored Energy
ꢀSource Voltage
Fig.20 Switching Charactcs
Fig.21 Dynamic Input Characteristics
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
10/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llElectrical characteristic curves
Fig.22 Inverse Diode Forward Current vs.
ꢀSource - Drain Voltage
Fig.23 Reverse Recovery Time vs.
ꢀInverse Diode Forward Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
11/13
20150730 - Rev.001
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R5013ANJ
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Avalanche Measurement Circuit
Fig.4-1 dv/dt MeasuremCcuit
Fig.1-2 Switching Waveforms
Fig.2-2 Gate Charge Weform
Fig.3-2 Avalaveform
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
12/13
20150730 - Rev.001
R5013ANJ
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
13/13
20150730 - Rev.001
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