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R6004CND [ROHM]

10V Drive Nch MOSFET; 10V驱动N沟道MOSFET
R6004CND
型号： R6004CND
厂家： ROHM    ROHM
描述：

10V Drive Nch MOSFET
10V驱动N沟道MOSFET

驱动
文件： 总6页 (文件大小：1154K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Data Sheet  
10V Drive Nch MOSFET  
R6004CND  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
CPT3  
(SC-63)  
<SOT-428>  
6.5  
5.1  
2.3  
0.5  
Features  
1) Low on-resistance.  
2) High-speed switching.  
3) Wide SOA.  
0.75  
0.9 2.3  
0.65  
2.3  
(1) Gate  
(2) Drain  
(3) Source  
(1)  
(2)  
(3)  
0.5  
1.0  
4) Drive circuits can be simple.  
5) Parallel use is easy.  
Application  
Switching  
Packaging specifications  
Inner circuit  
∗1  
Package  
Taping  
TL  
Type  
Code  
Basic ordering unit (pieces)  
2500  
∗2  
R6004CND  
(1) Gate  
(1)  
(2)  
(3)  
(2) Drain  
(3) Source  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
Limits  
Unit  
V
VDSS  
VGSS  
ID  
600  
Gate-source voltage  
25  
V
*3  
*1  
Continuous  
Pulsed  
4  
A
Drain current  
IDP  
16  
A
Continuous  
Pulsed  
IS  
4
A
Source current  
(Body Diode)  
*1  
*2  
*2  
*4  
ISP  
16  
A
Avalanche current  
Avalanche energy  
Power dissipation  
Channel temperature  
IAS  
2
1.1  
A
EAS  
PD  
mJ  
W
C  
C  
40  
Tch  
Tstg  
150  
Range of storage temperature  
55 to 150  
*1 Pw10s, Duty cycle1%  
*2 L 500H, VDD=50V, RG=25, Tch=25C  
*3 Limited only by maximum temperature allowed.  
*4 TC=25C  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-c)  
Limits  
3.13  
Unit  
Channel to Case  
C / W  
www.rohm.com  
2011.10 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/5  
Data Sheet  
R6004CND  
ꢀ
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
-
Typ.  
Max.  
10  
-
Unit  
A VGS=25V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=600V, VGS=0V  
Conditions  
Gate-source leakage  
-
-
-
-
Drain-source breakdown voltage V(BR)DSS  
600  
-
V
Zero gate voltage drain current  
IDSS  
100  
4.5  
Gate threshold voltage  
Static drain-source on-state  
resistance  
VGS (th)  
2.5  
V
S
VDS=10V, ID=1mA  
ID=2A, VGS=10V  
*
RDS (on)  
-
1.4  
1.8  
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
Ciss  
Coss  
Crss  
td(on)  
tr  
1.2  
-
-
-
-
-
-
-
-
-
-
-
-
VDS=10V, ID=2A  
-
-
-
-
-
-
-
-
-
-
280  
222  
15  
23  
28  
44  
39  
11  
3
pF VDS=25V  
pF VGS=0V  
pF f=1MHz  
ns VDD 300V, ID=2A  
ns VGS=10V  
ns RL=150  
ns RG=10  
nC VDD 300V  
nC ID=4A  
*
*
Turn-off delay time  
Fall time  
td(off)  
*
*
*
*
*
tf  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Qg  
Qgs  
Qgd  
5
nC VGS=10V  
*Pulsed  
Body diode characteristics (Source-Drain)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.5  
Conditions  
*
VSD  
V
IS=4A, VGS=0V  
*Pulsed  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/5  
2011.10 - Rev.A  
Data Sheet  
R6004CND  
ꢀ
Electrical characteristic curves  
Fig.2 Typical Output Characteristics (Ⅱ)  
Fig.1 Typical Output Characteristics (Ⅰ)  
Fig.3 Typical Transfer Characteristics  
0.5  
4
3
2
1
0
100  
10  
VGS=10.0V  
Ta=25℃  
VGS=10.0V  
VGS=8.0V  
VGS=7.0V  
VGS=6.5V  
VDS= 10V  
Pulsed  
VGS=8.0V  
pulsed  
VGS=7.0V  
VGS=6.5V  
VGS=6.0V  
0.4  
0.3  
0.2  
0.1  
0
VGS=5.0V  
VGS=6.0V  
1
Ta=25℃  
pulsed  
0.1  
Ta=125℃  
Ta= 75℃  
Ta= 25℃  
Ta= -25℃  
VGS=4.5V  
VGS=5.0V  
VGS=4.5V  
0.01  
0.001  
0
2
4
6
8
10  
0
1
2
3
4
5
6
7
8
9
10  
0
0.2  
0.4  
0.6  
0.8  
1
GATE-SOURCE VOLTAGE : VGS (V)  
Drain-Source Voltage : VDS [V]  
Drain-Source Voltage : VDS [V]  
Fig.6 Static Drain-Source On-State  
Resistance vs. Gate Source  
Fig.4 Gate Threshold Voltage  
vs. Channel Temperature  
Fig.5 Static Drain-Source On-State  
Resistance vs. Drain Current  
4
3.5  
3
6
5
4
3
2
1
0
100  
10  
VDS= 10V  
ID= 1mA  
Ta=25℃  
pulsed  
VGS= 10V  
Pulsed  
2.5  
2
ID= 4.0A  
1
1.5  
1
Ta=125℃  
Ta= 75℃  
Ta= 25℃  
Ta= -25℃  
ID= 2.0A  
0.1  
0.01  
0.5  
0
0.1  
1
10  
0
5
10  
15  
-50  
0
50  
100  
150  
GATE-SOURCE VOLTAGE : VGS (V)  
DRAIN CURRENT : ID (A)  
CHANNEL TEMPERATURE: Tch (℃)  
Fig.9 Source Current vs.  
Sourse-Drain Voltage  
Fig.8 Forward Transfer Admittance  
vs. Drain Current  
Fig.7 Static Drain-Source On-State  
Resistance vs. Channel Temperature  
10  
1
5
4
3
2
1
0
100  
10  
VGS= 0V  
Pulsed  
VGS= 10V  
Pulsed  
VDS= 10V  
Pulsed  
ID= 4.0A  
1
Ta=125℃  
Ta= 75℃  
Ta= 25℃  
Ta= -25℃  
Ta=125℃  
Ta= 75℃  
Ta= 25℃  
Ta= -25℃  
0.1  
ID= 2.0A  
0.1  
0.01  
0.01  
0.001  
-50  
0
50  
100  
150  
0.0  
0.5  
1.0  
1.5  
0.01  
0.1  
1
10  
SOURCE-DRAIN VOLTAGE : VSD (V)  
DRAIN CURRENT : ID (A)  
CHANNEL TEMPERATURE: Tch (℃)  
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© 2011 ROHM Co., Ltd. All rights reserved.  
3/5  
2011.10 - Rev.A  
Data Sheet  
R6004CND  
ꢀ
Fig.10 Typical Capacitance vs.  
Drain-Source Voltage  
Fig.12 Reverse Recovery Time  
Fig.11 Dynamic Input Characteristics  
vs.Source Current  
10000  
1000  
100  
10  
15  
10  
5
10000  
1000  
100  
Ta= 25℃  
VDD= 300V  
ID= 4A  
RG= 10Ω  
Pulsed  
Ciss  
Coss  
Ta= 25℃  
di / dt= 100A / μs  
VGS= 0V  
Pulsed  
Ta= 25℃  
f= 1MHz  
VGS= 0V  
Crss  
1
0
10  
0.01  
0.1  
1
10  
100  
1000  
0
5
10  
15  
0
1
10  
TOTAL GATE CHARGE : Qg (nC)  
DRAIN-SOURCE VOLTAGE : VDS (V)  
SOURCE CURRENT : IS (A)  
Fig.13 Switching Characteristics  
10000  
1000  
100  
10  
Ta= 25℃  
VDD= 300V  
VGS= 10V  
RG= 10Ω  
Pulsed  
tf  
td(off)  
tr  
td(on)  
1
0.01  
0.1  
1
10  
DRAIN CURRENT : ID (A)  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/5  
2011.10 - Rev.A  
Data Sheet  
R6004CND  
ꢀ
Measurement circuits  
Pulse width  
V
GS  
ID  
VDS  
90%  
50%  
10%  
50%  
V
V
GS  
DS  
RL  
10%  
10%  
90%  
D.U.T.  
VDD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-1 Switching Time Measurement Circuit  
Fig.1-2 Switching Waveforms  
V
G
VGS  
I
D
VDS  
Q
g
RL  
V
GS  
D.U.T.  
I
G(Const.)  
Q
gs  
Qgd  
VDD  
RG  
Charge  
Fig.2-1 Gate Charge Measurement Circuit  
Fig.2-2 Gate Charge Waveform  
V
GS  
IAS  
VDS  
V(BR)DSS  
L
IAS  
D.U.T.  
RG  
VDD  
VDD  
V
(BR)DSS  
1
2
E
AS  
=
L IAS2  
V
(BR)DSS  
-
V
DD  
Fig.3-1 Avalanche Measurement Circuit  
Fig.3-2 Avalanche Waveform  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
5/5  
2011.10 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
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