RB050L-40_11 [ROHM]
Shottky barrier diode; 肖特基势垒二极管
| 型号： | RB050L-40_11 |
| 厂家： | 
ROHM |
| 描述： | Shottky barrier diode |
| 文件： | 总4页 (文件大小：965K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Shottky barrier diode
RB050L-40
Applications
Dimensions(Unit : mm)
Land size figure(Unit : mm)
General rectification
2.0
2.6±0.2
Features
1) Small power mold type. (PMDS)
2) Low IR
3
5
0.1±0.02
ꢀꢀꢀ 0.1
3) High reliability.
①
②
PMDS
2.0±0.2
1.5±0.2
Construction
Silicon epitaxial planar
Structure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture Date
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings(Ta=25°C)
Parameter
Limits
40
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
40
V
Average rectified forward voltage
Forward current surge peak (60Hz・1cyc)
Junction temperature
3
Io
A
IFSM
Tj
70
A
125
°C
°C
Storage temperature
40 to 125
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics(Ta=25°C)
Parameter
Symbol
VF1
Min.
Typ.
Max.
0.55
0.50
1
Unit
V
Conditions
-
-
-
-
-
-
IF=3.0A
IF=1.5A
VR=40V
Forward voltage
Reverse current
VF2
V
IR
mA
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.D
Data Sheet
RB050L-40
Electrical characteristic curves(Ta=25°C)
1000
100
10
1000000
10
f=1MHz
100000
10000
1000
100
Ta=75℃
Ta=125℃
Ta=75℃
1
Ta=125℃
Ta=25℃
Ta=25℃
10
Ta=-25℃
0.1
0.01
1
Ta=-25℃
0.1
0.01
1
0
5
10 15 20 25 30 35 40
0
100
200
300
400
500
600
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
600
590
580
570
560
550
540
530
520
510
500
100
90
80
70
60
50
40
30
20
10
0
530
Ta=25℃
f=1MHz
VR=0V
Ta=25℃
VR=40V
n=30pcs
Ta=25℃
IF=3A
n=30pcs
520
510
500
490
480
n=10pcs
AVE:579.1pF
AVE:503.8mV
AVE:9.069uA
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200
150
100
50
20
15
10
5
200
150
100
50
AVE:157.0A
Ifsm
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
1cyc
Ifsm
AVE:9.3ns
8.3ms
0
0
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISRESION MAP
5
4
3
2
1
0
300
250
200
150
100
50
1000
100
10
Mounted on epoxy board
Rth(j-a)
Ifsm
t
DC
D=1/2
Rth(j-c)
IF=1A
Sin(θ＝180)
IM=100mA
1
1ms time
300us
0
0.1
0
1
2
3
4
5
0.1
1
10
100
0.001
0.1
TIME:t(s)
Rth-t CHARACTERISTICS
10
1000
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.D
Data Sheet
RB050L-40
7
6
5
4
3
2
1
0
10
8
7
6
5
4
3
2
1
0
Io
0A
0V
Io
0A
0V
VR
t
VR
DC
D=t/T
VR=20V
Tj=125℃
t
D=t/T
VR=20V
Tj=125℃
T
T
6
D=1/2
DC
D=1/2
D=1/2
4
DC
Sin(θ＝180)
25
2
Sin(θ＝180)
50
Sin(θ＝180)
30 40
0
0
0
25
75
100
125
0
50
75
100
125
10
20
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
30
25
20
15
10
5
No break at 30kV
AVE:17.6kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.04 - Rev.D
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
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