RB051L-40 [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RB051L-40 |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB051L-40
Diodes
Schottky barrier diode
RB051L-40
zExternal dimensions (Units : mm)
zApplications
High frequency rectification
For switching power supply
1.5±0.2
CATHODE MARK
zFeatures
1) Compact power mold type. (PMDS)
2) Ultra low VF. (VF=0.29V Typ. at 1A)
3) VRM=40V guaranteed.
3
1
+0.02
−0.1
0.1
2.0±
0.2
2.6±0.2
zConstruction
Silicon epitaxial planar
ROHM : PMDS
EIAJ : −
JEDEC : SOD-106
,
·····Date of manufacture EX. 1999.12→9, C
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
40
Unit
V
V
RM
Peak reverse voltage
DC reverse voltage
VR
20
V
I
O
3.0
A
Mean rectifying current
Peak forward surge current
I
FSM
70
A
(60Hz
·
1
)
Tj
125
°C
°C
Junction temperature
Storage temperature
Tstg
−40~+125
T
L
90°C Max. 180° half sine wave when mounted on an alumina substrate
(82 × 30 × 1.0 mm)
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Typ.
Max.
0.35
0.45
1.0
Unit
Conditions
V
F
1
2
−
−
−
−
V
V
I
I
F
F
=1.0A
=3.0A
Forward voltage
V
F
I
I
R
1
mA
µA
V
V
R
=20V
=15V
Reverse current
R2
150
R
RB051L-40
Diodes
zElectrical characteristic curves (Ta = 25°C)
1000
100
10
10
100m
10m
1m
Ta=125°C
1
75°C
25°C
100m
10m
5
°
100µ
10µ
1µ
°
−25°C
1m
0
5
10
15
20
25
30
(V)
35
0
0.1
0.2
0.3
0.4
(V)
0.5
0
10
20
30
40
50
REVERSE VOLTAGE : V
R
FORWARD VOLTAGE :
VF
REVERSE VOLTAGE : V
R
(V)
Fig. 3 Capacitance between
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
terminals characteristics
5.0
5.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
DC
DC
IF
DC
I
F
D=0.8
I
O
I
O
D=0.8
D=0.8
Tp
T
Tp
D
D=0.5
4.0
3.0
2.0
1.0
0
4.0
3.0
2.0
1.0
0
T
D=
Tp / T
VR=VRM / 2
sine
=
Tp / T
D=0.3
D=0.5
D=0.5
VR
=V
RM / 2
D=0.2
sine wave
sine
D=0.1
D=0.3
D=0.2
D=0.3
D=0.2
D=0.05
I
F
D=0.1
D=0.1
I
O
D=0.05
D=0.05
Tp
D
T
=Tp / T
Tj=Tj Max.
0
25
50
75
100
°C
125
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
25
50
75
100
125
AVERAGE RECTIFIED FORWARD CURRENT : I (A)
O
LEAD TEMPERATURE : T
L
(
)
AMBIENT TEMPERATURE : Ta (°C
)
Fig. 5 Derating curve (I
O
- T
L)
Fig. 6 Forward power dissipation
characteristics
Fig. 4 Derating curve (I - Ta)
O
(When mounted on
almina PCBs)
5.0
0.50
0.40
0.30
0.20
0.10
0
DC
V
R
I
F
D=0.8
I
O
DC
D=0.05
D=0.1
D=0.2
D=0.3
D=0.5
4.0
3.0
2.0
1.0
0
Tp
D
Tj
=
Tj Max.
T
0
=
Tp / T
D=0.5
V
R=V
RM / 2
sine
V
R
Tp
T
D=0.3
D=0.2
Tj=
Tj Max.
Tp / T
D=
D=0.1
sine
D=0.05
D=0.8
0
2
4
6
8
10 12 14 16 18 20
0
25
50
75
100
125
REVERSE VOLTAGE : V V)
R
(
AMBIENT TEMPERATURE : Ta (°C)
Fig. 7 Reverse power dissipation
characteristics
Fig. 8 Derating curve
(when mounted on a glass
epoxy PCBs board)
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ROHM
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