RB056L-40 [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB056L-40 |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky Barrier Diode
RB056L-40
Applications
Dimensions(Unit : mm)
Land size figure(Unit : mm)
General rectification
2.0
Features
1)Small power mold type.(PMDS)
2)Low IR
3)High reliability
PMDS
Construction
Silicon epitaxial planer
Structure
Taping specifications(Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings(Ta=25C)
Parameter
Limits
40
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
40
V
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc)
Junction temperature
3
Io
A
70
IFSM
Tj
A
150
C
C
Storage temperature
-40to+150
Tstg
(*1)Mounting on epoxi board. (Tc=63CMAX.)
Electrical characteristics(Ta=25℃)
Parameter
Conditions
Symbol
VF1
Min.
Typ.
Max.
0.67
0.58
50
Unit
V
-
-
-
-
-
-
IF=3.0A
IF=2.0A
VR=40V
Forward voltage
Reverse current
VF2
V
IR
A
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©2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.A
1/3
ꢀ
RB056L-40
Data Sheet
Electrical characteristics curves
10000
1000
100
10
1000
100
10
1000
Ta=150C
Ta=75C
f=1MHz
Ta=125C
Ta=125C
Ta=150C
Ta=-25C
100
10
1
Ta=75C
Ta=25C
Ta=25C
Ta=-25C
1
0.1
1
0.01
0
100
200
300
400
500
600
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
0.3
20
10
0
480
470
460
450
440
430
Ta=25C
f=1MHz
VR=0V
Ta=25C
VR=40V
n=30pcs
Ta=25C
IF=1A
0.29
0.28
0.27
0.26
0.25
n=30pcs
n=30pcs
AVE:454.3mV
AVE : 0.281nF
AVE : 4.08A
Ct DISPERSION MAP
VF DISPERSION MAP
IR DISPERSION MAP
200
150
100
50
30
25
20
15
10
5
100
Ta=25C
IF=0.5A
Ifsm
1cyc
80
60
40
20
0
IR=1A
8.3m
Irr=0.25*IR
n=10pcs
AVE : 83.0A
Ifsm
8.3ms
8.3m
AVE : 10.4ns
1cyc
0
0
1
10
NUMBER OF CYCLES
100
IFSM DISRESION MAP
trr DISPERSION MAP
IFSM-CYCLE CHARACTERISTICS
1000
100
10
3
2
1
0
300
250
200
150
100
50
On glass-epoxy board
Rth(j-a)
Ifsm
t
DC
D=1/2
Rth(j-c)
IF=1A
Sin(=180)
IM=100mA
1ms
1
time
300s
10
0.1
0
0.001 0.01
0.1
1
100
1000
0.1
1
10
100
0
1
2
3
TIME : t(ms)
IFSM-t CHARACTERISTICS
TIME : t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.A
2/3
ꢀ
RB056L-40
Data Sheet
5
4.5
4
0.6
0.5
0.4
0.3
0.2
0.1
7
6
5
4
3
2
1
0
Io
Io
0A
0V
0A
0V
VR
DC
VR
t
D=t/T
t
3.5
3
D/t/T
VR=200V
VR=20V
DC
Tj=150C
T
Tj=150C
T
D=1/2
D=1/2
2.5
2
D=1/2
DC
1.5
1
Sin(=180)
0.5
0
Sin(=180)
Sin(=180)
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
10
20
30
40
AMBIENT TEMPERATURE : Ta(C)
REVERSE VOLTAGE : VR(V)
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Ta)
VR-PR CHARACTERISTICS
Derating Curve"(Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE : 7.3kV
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
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3/3
2010.02 - Rev.A
©2010 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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R1010
A
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