RB068L-60TF [ROHM]

Schottky Barrier Diode; 肖特基二极管
RB068L-60TF
型号: RB068L-60TF
厂家: ROHM    ROHM
描述:

Schottky Barrier Diode
肖特基二极管

肖特基二极管
文件: 总5页 (文件大小:457K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Schottky Barrier Diode  
RB068L-60  
lApplications  
lExternal Dimensions(Unit : mm)  
lLand Size Figure(Unit : mm)  
General rectification  
2.6±0.2  
2.0  
lFeatures  
1)Small power mold type.(PMDS)  
2)High reliability  
9
5
0.1±0.02  
ꢀꢀꢀ 0.1  
1
2
3)AEC-Q101 qualified  
2.0±0.2  
1.5±0.2  
PMDS  
lConstruction  
Silicon epitaxial  
lStructure  
ROHM : PMDS  
JEDEC : SOD-106  
1
2
Manufacture Date  
lTaping Dimensions(Unit : mm)  
2.0±0.05  
4.0±0.1  
0.3  
φ 1.55±0.05  
φ 1.55  
2.9±0.1  
4.0±0.1  
2.8MAX  
lAbsolute Maximum Ratings(Ta=25°C)  
Parameter  
Reverse voltage (repetitive)  
Reverse voltage (DC)  
Limits  
Symbol  
VRM  
Unit  
V
60  
60  
2
VR  
V
Average rectified forward current (*1)  
Forward current surge peak (60Hz1cyc)  
Junction temperature  
Io  
IFSM  
Tj  
A
40  
150  
A
°C  
°C  
Storage temperature  
Tstg  
-55 to +150  
(*1)Mounting on epoxi board. 180°Half sine wave  
lElectrical Characteristics(Ta=25°C)  
Parameter  
Forward voltage  
Conditions  
Symbol  
Min.  
-
Typ.  
-
Max.  
0.70  
2.0  
Unit  
V
VF  
IR  
IF=2.0A  
VR=60V  
Reverse current  
-
-
mA  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
1/4  
2012.08 - Rev.A  
Data Sheet  
RB068L-60  
10  
1000  
100  
Ta = 150°C  
10  
Ta = 125°C  
Ta = 75°C  
Ta = 150°C  
1
1
Ta = 125°C  
0.1  
Ta = 75°C  
Ta = 25°C  
0.1  
0.01  
0.001  
0.0001  
Ta = 25°C  
Ta = -25°C  
Ta = -25°C  
40  
0.01  
100  
0
10  
20  
30  
50  
60  
200  
300  
400  
500  
600  
700  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
FORWARD VOLTAGE:VF(mV)  
VF-IF CHARACTERISTICS  
1000  
630  
625  
620  
615  
610  
605  
600  
595  
590  
f = 1MHz  
Ta=25°C  
VF=2A  
n=30pcs  
AVE : 602.2mV  
100  
10  
0
5
10  
15  
20  
25  
30  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
VF DISPERSION MAP  
300  
275  
250  
225  
200  
175  
150  
125  
100  
500  
475  
450  
425  
400  
375  
Ta=25°C  
VR=60V  
n=30pcs  
Ta=25°C  
f=1MHz  
VR=0V  
n=10pcs  
AVE : 180.1nA  
AVE : 386pF  
IR DISPERSION MAP  
Ct DISPERSION MAP  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2/4  
2012.08 - Rev.A  
Data Sheet  
RB068L-60  
300  
275  
250  
225  
200  
175  
30  
25  
20  
15  
10  
5
Ta=25°C  
IF=0.5A  
IR=1A  
Irr=0.25*IR  
n=10pcs  
IFSM  
8.3ms  
1cyc.  
AVE : 8.2ns  
AVE : 192A  
0
IFSM DISRESION MAP  
trr DISPERSION MAP  
10000  
1000  
100  
10000  
1000  
100  
IFSM  
IFSM  
8.3ms  
8.3ms  
time  
1cyc.  
10  
1
10  
10  
100  
1
10  
100  
NUMBER OF CYCLES  
IFSM-CYCLE CHARACTERISTICS  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
1000  
100  
10  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Mounted on epoxy board  
IM=10mA IF=2A  
Rth(j-a)  
Rth(j-c)  
time  
300ms  
D = 1/2  
Sin(θ180)  
1ms  
DC  
1
0.01  
0.1  
1
10  
100  
1000  
0
1
2
3
4
AVERAGE RECTIFIED  
FORWARD CURRENT:Io(A)  
Io-Pf CHARACTERISTICS  
TIME:t(s)  
Rth-t CHARACTERISTICS  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
3/4  
2012.08 - Rev.A  
Data Sheet  
RB068L-60  
0.020  
0.018  
0.016  
0.014  
0.012  
0.010  
0.008  
0.006  
0.004  
0.002  
5
4
3
2
1
0
Io  
0A  
0V  
VR  
t
D=t/T  
VR=30V  
Tj=150°C  
DC  
T
D = 1/2  
DC  
D = 1/2  
Sin(θ = 180)  
Sin(θ = 180)  
0.000  
0
10  
20  
30  
40  
50  
60  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE:Ta(°C)  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
DERATING CURVE(Io-Ta)  
5
4
3
2
1
30  
25  
20  
15  
10  
5
Io  
VR  
0A  
0V  
t
DC  
D=t/T  
VR=30V  
Tj=150°C  
AVE : 16.9kV  
T
D = 1/2  
AVE : 5.8kV  
Sin(θ = 180)  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
0
0
0
25  
50  
75  
100  
125  
150  
CASE TEMPARATURE:Tc(°C)  
DERATING CURVE(Io-Tc)  
ESD DISPERSION MAP  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
4/4  
2012.08 - Rev.A  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-  
controller or other safety device). ROHM shall bear no responsibility in any way for use of any  
of the Products for the above special purposes. If a Product is intended to be used for any  
such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may  
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to  
obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
R1120A  

相关型号:

RB068L100

Schottky Barrier Diode
ROHM

RB068L100DD

车载肖特基二极管
ROHM

RB068L100DDTE25

Rectifier Diode,
ROHM

RB068L100TE25

Schottky Barrier Diode
ROHM

RB068L100TFTE25

Rectifier Diode, Schottky, 1 Element, 2A, 100V V(RRM),
ROHM

RB068L150

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 150V V(RRM), Silicon, PMDS, 2 PIN
ROHM

RB068L150DD

RB068L150DD是适合一般整流用途的车载级高可靠性肖特基势垒二极管。
ROHM

RB068L150TE25

Rectifier Diode,
ROHM

RB068LAM-30

RB068LAM-30是适合一般整流用途的肖特基势垒二极管。
ROHM

RB068LAM-30TF

RB068LAM-30TF是适合一般整流用途的车载级高可靠性肖特基势垒二极管。
ROHM

RB068LAM-30TFTR

Rectifier Diode,
ROHM

RB068LAM-30TR

Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 30V V(RRM), Silicon,
ROHM