RB078B30S [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RB078B30S |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：1164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RB078B30S
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
6.0
Swiching power supply
2.3±0.2
6.5±0.2
0.1
0.5±0.1
C0.5
5.1±0.2
0.1
lFeatures
1.6
1.6
1)Power mold type.(CPD)
2)High reliability
3)Low IR
①
0.75
0.65±0.1
0.9
（1） （2） （3）
CPD
lStructure
2.3 2.3
0.5±0.1
1.0±0.2
lConstruction
2.3±0.2 2.3±0.2
Silicon epitaxial planer
ROHM : CPD
JEITA : SC-63
①
Manufacture Date
lTaping dimensions (Unit : mm)
2.0±0.05
φ 1.55±0.1
ꢀꢀꢀꢀꢀ
4.0±0.1
8.0±0.1
0.4±0.1
0
TL
φ 3.0±0.1
6.8±0.1
8.0±0.1
2.7±0.2
lAbsolute maximum ratings (Tc=25C)
Parameter
Limits
30
Symbol
VRM
VR
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
V
30
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
5
Io
IFSM
Tj
A
40
A
150
C
C
Storage temperature
Tstg
-55 to +150
(*1) Business frequencies, Rating of R-load, Tc=95°C Max.
lElectrical characteristics (Tj=25C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.72
5
Unit
V
Conditions
VF
IR
IF=5.0A
VR=30V
-
-
-
-
Reverse current
μA
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.A
1/4
Data Sheet
RB078B30S
ꢀ
1000
100
10
10
Tj=150°C
Tj=125°C
Tj=150°C
1
Tj=125°C
1
Tj=25°C
0.1
0.1
0.01
Tj=25°C
0.01
0
100 200 300 400 500 600 700 800
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10000
1000
100
700
600
500
400
f=1MHz
Tj=25°C
Tj=25°C
IF=5.0A
n=20pcs
AVE:619.5mV
10
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
900
800
700
Ta=25°C
f=1MHz
VR=0V
Tj=25°C
VR=30V
n=20pcs
n=10pcs
1
AVE:0.14mA
AVE:825.5pF
0.1
0.01
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Data Sheet
RB078B30S
ꢀ
120
100
80
60
40
20
0
30
25
20
15
10
5
Tj=25°C
IF=0.5A
IR=1.0A
Irr=0.25×IR
n=10pcs
AVE:96.5A
AVE:15.3ns
1cyc
IFSM
8.3ms
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
100
10
1000
100
10
IFSM
IFSM
time
8.3ms 8.3ms
1cyc.
1
1
1
1
10
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
1
6
5
4
3
2
1
0
Rth(j-a)
Rth(j-c)
D.C.
D=1/2
Sin(θ＝180)
On glass-epoxy substrate
soldering land 50mm□
0.1
0.001
0.01
0.1
1
10
100
1000
0
2
4
6
8
10
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
Data Sheet
RB078B30S
ꢀ
0.015
0.01
0.005
0
10
8
Io
0A
0V
VR
D.C.
t
D=t/T
VR=20V
T
Tj=150°C
D.C.
D=1/2
6
Sin(θ＝180)
4
D=1/2
2
Sin(θ＝180)
0
0
25
50
75
100
125
150
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
Io
0A
0V
VR
30
25
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
t
D=t/T
VR=20V
T
D.C.
Tj=150°C
AVE：26.5kV
D=1/2
Sin(θ＝180)
AVE：7.1kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
ESD DISPERSION MAP
DERATING CURVE(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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