RB095B-30_09 [ROHM]

Schottky barrier Diode; 肖特基二极管


型号：	RB095B-30_09
厂家：	ROHM
描述：	Schottky barrier Diode 肖特基二极管肖特基二极管
文件：	总4页 (文件大小：428K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Schottky barrier Diode

RB095B-30

zApplications

zDimensions(Unit : mm)

zLand size figure(Unit : mm)

General rectification

6.0

zFeatures

1)Power mold type.(CPD)

2)Low V_F

1 6

1.6

3)High reliability

CPD

2.3 2.3

zConstruction

Silicon epitaxial planar

zStructure

(2)

(1) (3)

zTaping dimensions(Unit : mm)

zAbsolute maximum ratings(Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz・1cyc)(*1)

Junction temperature

I_FSM

150

°C

Storage temperature

-40 to +150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=12°5C

zElectrical characteristic(Ta=25°C)

Parameter

Conditions

Symbol

V_F

Min.

Typ.

Max.

0.425

200

Unit

Forward voltage

Reverse current

I_F=3.0A

V_R=30V

junction to case

I_R

µA

Thermal impedance

6.0

θjc

°C/W

www.rohm.com

2009.11 - Rev.F

1/3

ꢀ

RB095B-30

Data Sheet

Ta=150°C

Ta=125°C

10000

1000

100

1000000

100000

10000

1000

100

Ta=150°C

f=1MHz

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

0.01

100

200

300

400

500

600

700

REVERSE VOLTAGE : V_R(V)

V_R-I_RCHARACTERISTICS

FORWARD VOLTAGE : V_F(mV)

V_F-I_FCHARACTERISTICS

REVERSE VOLTAGE : V_R(V)

V_R-Ct CHARACTERISTICS

440

430

420

410

400

390

200

180

160

140

120

100

2000

1950

1900

1850

1800

1750

1700

1650

1600

1550

1500

Ta=25°C

I_F=3A

Ta=25°C

f=1MHz

V_R=0V

Ta=25°C

V_R=30V

n=30pcs

n=10pcs

AVE:402.0mV

AVE:41.0µA

AVE:1617.3pF

Ct DISPERSION MAP

V_FDISPERSION MAP

I_RDISPERSION MAP

300

250

200

150

100

1000

100

Ta=25°C

I_F=0.5A

1cyc

Ifsm

I_R=1A

Irr=0.25*I_R

n=10pcs

8.3ms 8.3ms

1cyc

8.3ms

AVE:19.3ns

AVE:63.0A

100

trr DISPERSION MAP

I_FSMDISPERSION MAP

NUMBER OF CYCLES

I_FSM-CYCLE CHARACTERISTICS

100

1000

100

Rth(j-a)

Rth(j-c)

D=1/2

Ifsm

Sin(θ=180)

Mounted on epoxy board

IM=100mA

I_F=3A

1ms

time

300µs

0.1

0.001

0.01

0.1

100

1000

100

TIME : t(ms)

_FSM-t CHARACTERISTICS

TIME : t(s)

Rth-t CHARACTERISTICS

AVERAGE RECTIFIED

FORWARD CURRENT : Io(A)

Io-Pf CHARACTERISTICS

www.rohm.com

2009.11 - Rev.F

2/3

ꢀ

RB095B-30

Data Sheet

V_R

Sin(θ=180)

D=t/T

V_R=15V

Tj=150°C

V_R=15V

Tj=150°C

D=1/2

Sin(θ=180)

100

125

150

100

125

150

AMBIENT TEMPERATURE : Ta(°C)

REVERSE VOLTAGE : V_R(V)

V_R-P_RCHARACTERISTICS

CASE TEMPARATURE : Tc(°C)

Derating Curve"(Io-Ta)

Derating Curve"(Io-Tc)

No break at 30kV

C=200pF

C=100pF

R=0Ω

R=1.5kΩ

ESD DISPERSION MAP

www.rohm.com

2009.11 - Rev.F

3/3

Notice

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

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