RB095B-40 [ROHM]
Schottky barrier diode (Silicon Epitaxial Planer); 肖特基势垒二极管(硅外延刨床)型号: | RB095B-40 |
厂家: | ROHM |
描述: | Schottky barrier diode (Silicon Epitaxial Planer) |
文件: | 总4页 (文件大小:190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RB095B-40
Diodes
Schottky barrier diode
(Silicon Epitaxial Planer)
RB095B-40
zApplications
General rectification
(Common cathode dual chip)
zExternal dimensions (Unit : mm)
5.1±0.2
zLand size figure
6.5±0.2
2.3±0.2
ꢀꢀꢀ 0.1
6.0
ꢀꢀꢀ 0.1
0.5±0.1
0.05
1.6
1.6
①
1.5
zFeatures
1.2
0.75
0.8
0.9
0.65±0.1
(2)
(3)
0.55±0.1
ꢀꢀꢀꢀ 0.55
1.2±0.2
(1)
1) Power mold (CPD3)
2) High reliability
2.3±0.2 2.3±0.2
CPD
2.3 2.3
2.2
0.5
2.0
2-R0.3
3) Low V
F
& Low I
R
zStructure
R0.45
(1)
(2)
(3)
0.5
ROHM : CPD
0.95
24.5
JEITA : SC-63
①
ManufactureDate
zTaping dimensions (Unit : mm)
2.0±0.05
φ1.55±0.1
ꢀꢀꢀꢀꢀ
4.0±0.1
8.0±0.1
0
0.4±0.1
φ3.0±0.1
6.8±0.1
8.0±0.1
2.7±0.2
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
RM
45
V
R
40
V
∗
Average rectified forward current
I
O
6
45
A
∗
Forward current surge peak (60Hz 1cyc.)
Junction temperature
I
FSM
A
Tj
150
°C
°C
Storage temperature
Tstg
−40 to +150
∗ Business frequencies, Rating of R-load, 1/2 lo per diode, Tc=120°C
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
0.55
0.1
Unit
Conditions
V
F
−
−
−
−
−
−
V
I
F
=3.0A
=40V
junction to case
Reverse current
I
R
mA
V
R
Thermal impedance
θ
jc
6.0
°C/W
Rev.A
1/3
RB095B-40
Diodes
zElectrical characteristic curves
1000000
100000
10000
1000
100
10
1000
100
10
Ta=125℃
Ta=150℃
Ta=150℃
f=1MHz
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=75℃
1
0.1
Ta=25℃
Ta=25℃
10
1
Ta=-25℃
0.1
1
0.01
0.01
0
10
20
30
0
100 200 300 400 500 600 700
0
5
10 15 20 25 30 35 40
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
650
640
630
620
610
600
590
580
570
560
550
500
490
480
470
460
450
200
150
100
50
Ta=25℃
IF=3A
n=30pcs
Ta=25℃
VR=40V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:617.9pF
AVE:472.9mV
AVE:14.2uA
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300
250
200
150
100
50
30
25
20
15
10
5
1000
100
10
10
5
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
Ifsm
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:11.40ns
AVE:76.0A
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISRESION MAP
Mounted on epoxy board
IM=100mA IF=3A
100
10
1
1000
100
10
Ifs
Rth(j-a)
Rth(j-c)
t
1ms time
300us
DC
D=1/2
Sin(θ=180)
0
0.1
0
2
4
6
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
8
10
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
t(ms)
0.001
0.1TIME:t(s) 10
Rth-t CHARACTERISTICS
1000
Rev.A
2/3
RB095B-40
Diodes
15
10
5
10
8
15
10
5
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
VR=20V
Tj=150℃
D=t/T
VR=20V
Tj=150℃
DC
DC
T
T
Sin(θ=180)
D=1/2
6
D=1/2
D=1/2
4
DC
Sin(θ=180)
Sin(θ=180)
2
0
0
0
0
0
25
50
75
100
125
150
10
20
30
40
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(
Derating Curve (Io-Ta)
)
℃
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
CASE TEMPARATURE:Tc(℃)
Derating Curve (Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE:15.6kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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