RB095T-60 [ROHM]
Schottky barrier diode; 肖特基二极管型号: | RB095T-60 |
厂家: | ROHM |
描述: | Schottky barrier diode |
文件: | 总4页 (文件大小:320K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Schottky barrier diode
RB095T-60
Applications
Dimensions (Unit : mm)
Structure
Switching power supply
Features
1) Cathode common type.
(TO-220)
(1) (2) (3)
2) Low IR
3) High reliability
6
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
60
Reverse voltage (repetitive)
Reverse voltage(DC)
60
6
V
Average rectified forward current (*1)
Fprward current surge peak (60Hz / 1cyc)
Junction temperature
Io
A
100
IFSM
Tj
A
150
C
C
Storage temperature
-40 to +150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130C
Electrical characteristic (Ta=25°C)
Parameter
Conditions
Symbol
VF
Min.
Typ.
Max.
0.58
300
3.0
Unit
V
Forward voltage
Reverse current
-
-
-
-
-
-
IF=3A
IR
VR=60V
A
Thermal impedance
junction to case
jc
C/W
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©2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.D
1/3
ꢀ
RB095T-60
Data Sheet
Electrical characteristic curves
1000
100
10
10
1000000
100000
10000
1000
100
Ta=150°C
Ta=125°C
f=1MHz
Ta=150°C
Ta=125C
Ta=75C
Ta=25C
1
Ta=25°C
Ta=-25°C
Ta=75C
10
0.1
Ta=-25C
1
0.1
0.01
1
0.01
0
10
20
30
40
50
60
0
5
10
15
20
25
30
0
100 200 300 400 500 600 700 800
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
800
200
180
160
140
120
100
80
550
540
530
520
510
500
Ta=25C
f=1MHz
VR=0V
Ta=25C
IF=3A
Ta=25C
VR=60V
750
700
650
600
550
500
450
400
350
300
n=30pcs
n=30pcs
n=10pcs
AVE:532.4mV
60
AVE:20.8uA
40
AVE:514.4p
20
0
VF DISPERSION MAP
Ct DISPERSION MAP
IR DISPERSION MAP
30
25
20
15
10
5
1000
300
250
200
150
100
50
Ta=25C
IF=0.5A
Ifsm
Ifsm
1cyc
IR=1A
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
8.3ms
100
AVE:73.0A
AVE:8.30ns
10
10
0
0
1
10
NUMBER OF CYCLES
FSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
I
FSM DISPERSION MAP
I
100
10
1
1000
100
10
IF=3A
IM=100mA
1ms
Ifsm
t
time
300us
Rth(j-a)
Rth(j-c)
D=1/2
DC
5
Sin(θ=180)
0.1
0
0.001
0.01
0.1
1
10
100
1000
0
2
4
6
8
10
1
10
100
TIME:t(ms)
AVERAGE RECTIFIED
TIME:t(s)
IFSM-t CHARACTERISTICS
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
Rth-t CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.D
ꢀ
RB095T-60
Data Sheet
15
10
5
15
10
5
Io
15
10
5
0A
0V
Io
0A
0V
VR
t
VR
D=t/T
t
VR=30V
Tj=150℃
D=t/T
DC
DC
VR=30V
Tj=150℃
T
T
Sin(θ=180)
D=1/2
D=1/2
D=1/2
DC
Sin(θ =180)
Sin(θ =180)
0
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
0
10
20
30
40
50
60
REVERSE VOLTAGE:VR(V)
AMBIENT TEMPERATURE : Ta(℃)
CASE TEMPARATURE:Tc(℃)
VR-PR CHARACTERISTICS
Derating Curve"(Io-Ta)
Derating Curve"(Io-Tc)
30
No break at 30kV
25
20
15
10
5
AVE:12.7kV
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
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©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.D
Notice
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Examples of application circuits, circuit constants and any other information contained herein
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