RB160SS-40 [ROHM]

Schottky Barrier Diode; 肖特基二极管
RB160SS-40
型号: RB160SS-40
厂家: ROHM    ROHM
描述:

Schottky Barrier Diode
肖特基二极管

肖特基二极管
文件: 总5页 (文件大小:1152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Schottky Barrier Diode  
RB160SS-40  
lApplications  
lDimensions (Unit : mm)  
lLand size figure (Unit : mm)  
Small current rectification  
0.8  
lFeatures  
00.03  
1)Small power mold type (KMD2)  
2)High reliability  
3)Low IR  
KMD2  
0.8±0.05  
0.6±0.03  
0.7±0.05  
lStructure  
ROHM : KMD2  
JEDEC :-  
lConstruction  
JEITA : -  
dot (year week factory)  
Silicon epitaxial planer  
lTaping dimensions (Unit : mm)  
lAbsolute maximum ratings (Ta=25C)  
Parameter  
Limits  
Unit  
V
Symbol  
VRM  
VR  
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
40  
40  
V
Average rectified forward current (*1)  
Forward current surge peak(60Hz1cyc.)  
Junction temperature  
1
A
Io  
IFSM  
Tj  
5
A
150  
C  
C  
Storage temperature  
Tstg  
-40 to +150  
(*1) On the Glass epoxy substrate , 180°Half Sine wave  
lElectrical characteristics (Ta=25C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
0.50  
3.00  
Max.  
0.55  
Unit  
Conditions  
IF=0.7A  
VF  
-
-
V
Reverse current  
VR=40V  
IR  
50.00  
μA  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.10 - Rev.A  
1/4  
Data Sheet  
RB160SS-40  
10  
10000  
1000  
100  
10  
Tj=150°C  
Tj=125°C  
Tj=75°C  
1
Tj=150°C  
Tj=125°C  
Tj=25°C  
Tj=75°C  
0.1  
1
Tj=25°C  
0.01  
0.1  
0
200  
400  
600  
800  
0
10  
20  
30  
40  
REVERSE VOLTAGEVR(V)  
FORWARD VOLTAGEVF(mV)  
VR-IR CHARACTERISTICS  
VF-IF CHARACTERISTICS  
1000  
100  
10  
700  
600  
500  
400  
f=1MHz  
Tj=25°C  
Tj=25°C  
IF=0.7A  
n=20pcs  
AVE:516.3mV  
1
0
5
10  
15  
20  
25  
30  
VF DISPERSION MAP  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
100  
10  
1
150  
140  
130  
120  
110  
100  
Ta=25°C  
f=1MHz  
VR=0V  
Tj=25°C  
VR=40V  
n=20pcs  
n=10pcs  
AVE:3.15mA  
AVE:133.2pF  
Ct DISPERSION MAP  
IR DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/4  
2011.10 - Rev.A  
Data Sheet  
RB160SS-40  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
Tj=25°C  
IF=0.1A  
IR=0.1A  
Irr=0.10×IR  
n=10pcs  
AVE:15.8A  
AVE:8.6ns  
1cyc  
IFSM  
8.3ms  
0
0
IFSM DISPERSION MAP  
trr DISPERSION MAP  
100  
100  
10  
1
IFSM  
IFSM  
time  
8.3ms  
8.3ms  
1cyc.  
10  
1
1
1
10  
100  
10  
100  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
NUMBER OF CYCLES  
IFSM-CYCLE CHARACTERISTICS  
1000  
100  
10  
1.2  
1
D.C.  
D=1/2  
Rth(j-a)  
Rth(j-c)  
Sin(θ180)  
0.8  
0.6  
0.4  
0.2  
0
On glass-epoxy substrate  
soldering land 50mm□  
1
0.001  
0.01  
0.1  
1
10  
100  
1000  
0
0.5  
1
1.5  
2
TIME:t(s)  
AVERAGE RECTIFIED  
FORWARD CURRENTIo(A)  
Rth-t CHARACTERISTICS  
Io-Pf CHARACTERISTICS  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/4  
2011.10 - Rev.A  
Data Sheet  
RB160SS-40  
2
2
1.5  
1
Io  
0A  
0V  
VR  
t
D.C.  
D=t/T  
VR=20V  
Tj=150°C  
1.5  
T
D.C.  
D=1/2  
1
0.5  
0
D=1/2  
Sin(θ180)  
Sin(θ180)  
0.5  
0
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
CASE TEMPERATURE:Tc(°C)  
DERATING CURVE(Io-Tc)  
AMBIENT TEMPERATURE:Ta(°C)  
DERATING CURVE(Io-Ta)  
30  
25  
20  
15  
10  
5
No break at 30kV  
AVE4.35kV  
0
C=200pF  
C=100pF  
R=0Ω  
R=1.5kΩ  
ESD DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/4  
2011.10 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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