RBQ20NS45A [ROHM]
Schottky Barrier Diode; 肖特基二极管
| 型号： | RBQ20NS45A |
| 厂家： | 
ROHM |
| 描述： | Schottky Barrier Diode |
| 文件： | 总5页 (文件大小：1119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky Barrier Diode
RBQ20NS45A
lApplications
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
General rectification
BQ20NS
45A
lFeatures
①
1)Cathode Common Dual type.（LPDS）
2)Low IR.
lConstruction
Silicon epitaxial planer
ROHM : LPDS
lStructure
JEITA : TO263S
Manufacture Year, Week and Day
①
①
②
③
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Tc=25C)
Parameter
Limits
45
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
45
V
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
20
Io
IFSM
A
100
150
A
°C
°C
Tj
Storage temperature
Tstg
-40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Forward voltage
Conditions
Symbol
Min.
Typ. Max.
Unit
V
VF
IR
IF=10A
-
-
-
-
0.65
0.3
VR=45V
Reverse current
mA
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.A
1/4
Data Sheet
RBQ20NS45A
ꢀ
100
100000
10000
1000
100
Ta=150°C
Ta=125°C
Ta=150°C
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=75°C
10
Ta=25°C
1
0.1
0.01
0.1
Ta=-25°C
Ta=-25°C
0.01
0
100
200
300
400
500
600
700
0
10
20
30
40
50
REVERSE VOLTAGE：VR(V)
FORWARD VOLTAGE：VF(mV)
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
10000
1000
100
10
550
540
530
520
510
500
Ta=25°C
IF=10A
n=30pcs
f=1MHz
AVE:538.6mV
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
50
45
40
35
30
25
20
15
10
5
1300
1250
1200
1150
1100
1050
1000
Ta=25°C
f=1MHz
VR=0V
Ta=25°C
VR=45V
n=30pcs
n=10pcs
AVE:27.8mA
AVE:1140.8pF
0
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.A
2/4
Data Sheet
RBQ20NS45A
ꢀ
30
25
20
15
10
5
500
450
400
350
300
250
200
150
100
50
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
8.3ms
IFSM
AVE240A
AVE:14.6ns
0
0
IFSM DISRESION MAP
trr DISPERSION MAP
500
450
400
350
300
250
200
150
100
50
500
450
400
350
300
250
200
150
100
50
IFSM
IFSM
t
8.3ms
1cyc
8.3ms
0
1
0
10
100
1
10
100
NUMBER OF CYCLES
TIME:t(ms)
IFSM-CYCLE CHARACTERISTICS
IFSM-t CHARACTERISTICS
25
20
15
10
5
1000
100
10
D=1/2
Rth(j-a)
Rth(j-c)
Sin(q＝180)
1
DC
0.1
0
0.01
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.A
3/4
Data Sheet
RBQ20NS45A
ꢀ
4
3.5
3
50
45
40
35
30
25
20
15
10
5
0A
0V
Io
DC
VR
t
D=t/T
D=1/2
VR=20V
Tj=150°C
T
2.5
2
DC
1.5
D=1/2
Sin(q＝180)
1
0.5
0
Sin(q＝180)
0
0
10
20
30
40
50
0
25
50
75
100
125
150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
Io
VR
0A
0V
No break at 30kV
D=t/T
t
VR=20V
DC
T
Tj=150°C
D=1/2
AVE:12.4kV
Sin(q＝180)
0
0
0
25
50
75
100
125
150
C=100pF
C=200pF
CASE TEMPERATURE:Tc(°C)
R=1.5kW
R=0W
DERATING CURVE(Io-Tc)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.11 - Rev.A
4/4
Notice
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R1120A
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