RCJ330N25 [ROHM]
10V Drive Nch MOSFET; 10V驱动N沟道MOSFET
| 型号： | RCJ330N25 |
| 厂家： | 
ROHM |
| 描述： | 10V Drive Nch MOSFET |
| 文件： | 总7页 (文件大小：1234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
10V Drive Nch MOSFET
RCJ330N25
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1.24
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage
0.4
2.7
2.54
0.78
5.08
(1) (2) (3)
V
GSS garanteed to be ±30V .
4) High package power.
Application
Inner circuit
Switching
∗1
Packaging specifications
Package
Taping
TL
Type
Code
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
Basic ordering unit (pieces)
1000
RCJ330N25
1 BODY DIODE
Absolute maximum ratings (Ta 25°C)
Parameter Symbol
Drain-source voltage
Limits
250
Unit
V
VDSS
VGSS
ID
Gate-source voltage
30
V
*3
*1
Continuous
Pulsed
33
A
Drain current
IDP
132
26
A
*3
*1
Continuous
Pulsed
IS
A
Source current
(Body Diode)
ISP
104
A
*2
*2
Avalanche current
Avalanche energy
IAS
16.5
A
EAS
PD
74.8
mJ
W
C
C
Power dissipation (Tc=25C)
Channel temperature
40
Tch
Tstg
150
Range of storage temperature
55 to 150
*1 Pw10s, Duty cycle1%
*2 L≒500H, VDD=50V, Rg=25, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Thermal resistance
Parameter
Symbol
Rth(ch-c)*
Limits
3.12
Unit
Channel to Case
C / W
* TC=25°C
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2011.10 - Rev.A
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1/6
Data Sheet
ꢀ
RCJ330N25
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Typ.
Max.
Unit
nA VGS=±30V, VDS=0V
ID=1mA, VGS=0V
A VDS=250V, VGS=0V
Conditions
Gate-source leakage
IGSS
-
250
-
-
-
-
-
100
Drain-source breakdown voltage V(BR)DSS
-
V
Zero gate voltage drain current
IDSS
1
5
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
3
V
VDS=10V, ID=1mA
ID=16.5A, VGS=10V
RDS (on)
*
-
77
105
m
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
10
-
20
4500
220
130
50
-
-
-
-
-
-
-
-
-
-
-
S
ID=16.5A, VDS=10V
Ciss
Coss
Crss
td(on)
tr
pF VDS=25V
pF VGS=0V
-
-
pF f=1MHz
-
ns ID=16.5A, VDD 125V
ns VGS=10V
ns RL=7.6
ns RG=10
*
*
*
*
*
*
*
-
200
120
140
80
Turn-off delay time
Fall time
td(off)
tf
-
-
Total gate charge
Gate-source charge
Gate-drain charge
Qg
-
nC ID=33A,
Qgs
Qgd
-
25
nC VDD 125V
nC VGS=10V
-
27
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol Min.
Typ.
-
Max. Unit
1.5
Conditions
Is=33A, VGS=0V
*
VSD
-
V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.A
2/6
Data Sheet
RCJ330N25
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
35
35
30
25
20
15
10
5
Ta=25°C
Pulsed
Ta=25°C
Pulsed
VGS=10.0V
VGS=8.0V
30
25
20
15
10
5
VGS=10.0V
VGS=8.0V
VGS=7.0V
VGS=7.0V
VGS=6.5V
VGS=6.0V
VGS=6.0V
VGS=5.5V
VGS=6.5V
VGS=5.5V
0
0
0
10
20
30
40
50
0
1
2
3
4
5
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
Fig.4 Gate Threshold Voltage vs. Channel Temperature
100
10
6
5
4
3
2
VDS=10V
ID=1mA
pulsed
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.001
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
Gate-Source Voltage : VGS [V]
-50
0
50
100
150
Channel Temperature : Tch [℃]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
300
1000
100
10
VGS=10V
pulsed
VGS=10V
pulsed
250
200
150
ID=33A
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
ID=16.5A
50
0
1
0.01
0.1
1
10
100
-50
-25
0
25
50
75
100
125
150
Drain Current : ID [A]
Channel Temperature : Tch [℃]
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3/6
2011.10 - Rev.A
Data Sheet
RCJ330N25
ꢀ
Fig.8 Source Current vs. Source-Drain Voltage
Fig.7 Forward Transfer Admittance vs. Drain Current
100
100
10
VGS=0V
pulsed
VDS=10V
pulsed
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
0.001
0.001
0.01
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
Source-Drain Voltage : VSD [V]
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.10 Switching Characteristics
300
10000
1000
100
10
VDD≒125V
Ta=25°C
Pulsed
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
250
tf
200
ID=16.5A
ID=33.0A
td(off)
150
td(on)
100
50
0
tr
1
0
2
4
6
8
10
12
14
16
18
20
0.01
0.1
1
10
100
Gate-Source Voltage : VGS [V]
Drain Current : ID [A]
Fig.11 Dynamic Input Characteristics
Fig.12 Typical Capacitance vs. Drain-Source Voltage
10000
1000
100
14
12
10
8
Ta=25°C
VDD=125V
ID=33A
Ciss
Pulsed
6
Coss
4
Crss
Ta=25°C
2
f=1MHz
VGS=0V
10
0
0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
Drain-Source Voltage : VDS [V]
Total Gate Charge : Qg [nC]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.10 - Rev.A
Data Sheet
RCJ330N25
ꢀ
Fig.14 Normalized Transient Thermal Resistance v.s. Pulse Width
Fig.13 Maximum Safe Operating Area
1000
10
Operation in this area
is limited by RDS(on)
(VGS = 10V)
Ta=25°C
Single Pulse
100
10
1
0.1
PW = 100μs
1
0.01
0.001
0.0001
PW = 1ms
PW = 10ms
Mounted on epoxy board.
(25mm × 27mm × 0.8mm)
Rth(ch-a)=74.7°C/W
0.1
0.01
Ta=25°C
Single Pulse
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Pulse width : Pw (s)
Drain-Source Voltage : VDS [ V ]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.10 - Rev.A
Data Sheet
ꢀ
RCJ330N25
Measurement circuits
Pulse width
V
GS
ID
VDS
90%
50%
10%
50%
V
GS
DS
RL
V
10%
10%
90%
D.U.T.
VDD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
V
GS
IAS
VDS
V(BR)DSS
L
IAS
D.U.T.
RG
VDD
VDD
V
(BR)DSS
1
2
E
AS
=
L IAS2
V
(BR)DSS
-
V
DD
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.A
6/6
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