RCX081N20 [ROHM]
Nch 200V 8.0A 功率MOSFET;
| 型号： | RCX081N20 |
| 厂家： | 
ROHM |
| 描述： | Nch 200V 8.0A 功率MOSFET |
| 文件： | 总13页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RCX081N20
Nch 200V 8.0A Power MOSFET
Datasheet
lOutline
VDSS
200V
770mW
8.0A
TO-220FM
RDS(on) (Max.)
ID
(3)
PD
(2)
40W
(1)
lFeatures
lInner circuit
1) Low on-resistance.
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
*1 BODY DIODE
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lPackaging specifications
Packaging
Bulk
Reel size (mm)
-
lApplication
Tape width (mm)
Type
-
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Basic ordering unit (pcs)
500
Taping code
Marking
-
RCX081N20
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
200
Unit
V
Drain - Source voltage
*1
Tc = 25°C
A
ID
8.0
Continuous drain current
*1
Tc = 100°C
A
ID
4.3
*2
Pulsed drain current
A
ID,pulse
32
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
V
30
*3
5.17
mJ
A
EAS
*3
4.0
IAR
Tc = 25°C
Ta = 25°C
PD
PD
Tj
40
W
W
°C
°C
Power dissipation
2.23
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
1/12
Data Sheet
RCX081N20
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
RthJC
RthJA
Tsold
-
-
-
-
-
-
3.125 °C/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
56
°C/W
°C
265
lElectrical characteristics(Ta = 25°C)
Values
Typ.
-
Parameter
Symbol
Conditions
Unit
V
Min.
200
Max.
-
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 200V, VGS = 0V
Drain - Source breakdown voltage
-
-
-
-
10
Tj = 25°C
IDSS
Zero gate voltage drain current
mA
VDS = 200V, VGS = 0V
100
Tj = 125°C
IGSS
VGS = 30V, VDS = 0V
Gate - Source leakage current
Gate threshold voltage
-
3.25
-
-
-
nA
V
100
5.25
770
VGS (th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 4.0A
550
Static drain - source
on - state resistance
*4
VGS = 10V, ID = 4.0A
Tj = 125°C
RDS(on)
mW
-
1090
2.0
1500
-
gfs
VDS = 10V, ID = 4.0A
Forward transfer admittance
1.0
S
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
2/12
Data Sheet
RCX081N20
lElectrical characteristics(Ta = 25°C)
Values
Typ.
330
33
Parameter
Symbol
Conditions
VGS = 0V
Unit
Min.
Max.
Ciss
Coss
Crss
Input capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 25V
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
15
*4
VDD ⋍ 100V, VGS = 10V
13
td(on)
*4
ID = 4.0A
RL = 25W
RG = 10W
20
tr
*4
Turn - off delay time
Fall time
18
td(off)
*4
8
tf
lGate Charge characteristics(Ta = 25°C)
Values
Typ.
8.5
Parameter
Symbol
Conditions
DD ⋍ 100V
Unit
Min.
Max.
*4
V
Total gate charge
-
-
-
-
-
-
-
-
Qg
*4
ID = 8.0A
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
3.4
nC
V
Qgs
*4
VGS = 10V
3.4
Qgd
V(plateau)
VDD ⋍ 100V, ID = 4.0A
7.9
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
8.0
32
1.5
-
*1
Continuous source current
Pulsed source current
Forward voltage
-
-
-
-
-
-
-
A
A
IS
Tc = 25°C
*2
ISM
*4
VGS = 0V, IS = 8.0A
-
V
VSD
*4
Reverse recovery time
Reverse recovery charge
75
210
ns
nC
trr
IS = 4.0A
*4
di/dt = 100A/ms
-
Qrr
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 500mH, VDD = 50V, Rg = 25W, starting Tj = 25°C
*4 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
3/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
100
Ta=25ºC
Single Pulse
PW = 100ms
10
PW = 1ms
Operation in this
area is limited
by RDS(on)
1
0.1
0.01
PW = 10ms
0.1
1
10
100
1000
0
25 50 75 100 125 150 175
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Single Pulse
Rth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 56ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.0001
0.01
1
100
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
4/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.5 Avalanche Energy Derating Curve
Fig.4 Avalanche Current vs Inductive Load
vs Junction Temperature
100
120
100
80
60
40
20
0
VDD=50V,RG=25W
VGF=10V,VGR=0V
Starting Tch=25ºC
10
1
0.1
0.01
0.1
1
10
100
0
25 50 75 100 125 150 175
Coil Inductance : L [mH]
Junction Temperature : Tj [°C]
Fig.7 Typical Output Characteristics(II)
Fig.6 Typical Output Characteristics(I)
2
8
VGS=10.0V
Ta=25ºC
Ta=25ºC
Pulsed
VGS=10.0V
7
6
5
4
3
2
1
0
Pulsed
VGS=8.0V
1.5
VGS=8.0V
VGS=7.0V
VGS=7.0V
1
VGS=6.0V
0.5
VGS=6.0V
VGS=5.0V
0.8
Drain - Source Voltage : VDS [V]
0
0
0.2
0.4
0.6
1
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
5/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.8 Breakdown Voltage
vs. Junction Temperature
Fig.9 Typical Transfer Characteristics
280
10
VDS= 10V
VGS = 0V
270
ID = 1mA
260
1
250
240
230
220
210
200
190
180
0.1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.01
0.001
-50
0
50
100
150
0
1
2
3
4
5
6
7
8
9 10
Junction Temperature : Tj [°C]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
10
5.5
VDS= 10V
VDS = 10V
ID = 1mA
5.0
4.5
4.0
3.5
3.0
2.5
1
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
0.01
0.1
1
10
-50 -25
0
25 50 75 100 125 150
Junction Temperature : Tj [°C]
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
6/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
10000
1000
100
2000
Ta=25ºC
Ta=25ºC
1500
ID = 4.0A
VGS= 10V
ID = 8.0A
1000
500
0
0.01
0.1
1
10
0
10
20
Gate - Source Voltage : VGS [V]
Drain Current : ID [A]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
1200
1100
1000
900
800
700
600
500
400
300
VGS = 10V
ID = 4A
-50
0
50
100
150
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
7/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Drain Current Derating Curve
120
100
80
60
40
20
0
10000
VGS= 10V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1000
100
10
0.01
0.1
1
10
0
25 50 75 100 125 150 175
Drain Current : ID [A]
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
8/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.17 Typical Capacitance
vs. Drain - Source Voltage
Fig.18 Switching Characteristics
10000
1000
100
10
10000
Ta=25ºC
Ta = 25ºC
f = 1MHz
VGS = 0V
VDD= 100V
VGS= 10V
RG=10W
tf
1000
Ciss
td(off)
100
10
1
Coss
td(on)
Crss
tr
1
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.19 Dynamic Input Characteristics
20
Ta=25ºC
VDD= 100V
18
ID= 8.0A
RG=10W
16
14
12
10
8
6
4
2
0
0
5
10
15
20
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
9/12
Data Sheet
RCX081N20
lElectrical characteristic curves
Fig.20 Source Current
Fig21 Reverse Recovery Time
vs.Source Current
vs. Source - Drain Voltage
1000
10
VGS=0V
Ta=125ºC
Ta=75ºC
Ta=25ºC
1
0.1
Ta= -25ºC
100
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
10
0.01
0.1
1
10
0.0
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
Source Current : IS [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
10/12
Data Sheet
RCX081N20
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Avalanche Waveform
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Avalanche Measurement Circuit
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
11/12
Data Sheet
RCX081N20
lDimensions (Unit : mm)
E
D
TO-220FM
A
E1
b1
Q
c
e
b
x
A
MILIMETERS
INCHES
DIM
MIN
16.60
1.80
14.80
6.80
0.70
1.10
0.70
9.90
4.40
MAX
17.60
2.20
15.40
7.20
0.85
1.50
0.85
10.30
4.80
MIN
MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
A
A1
A2
A4
b
b1
c
D
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.39
E
0.173
2.54
0.10
e
E1
F
L
p
Q
x
2.70
2.80
11.50
3.00
2.10
-
3.00
3.20
12.50
3.40
3.10
0.381
0.106
0.11
0.453
0.118
0.083
-
0.118
0.126
0.492
0.134
0.122
0.015
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
12/12
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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