RF08L6S_11 [ROHM]
Super Fast Recovery Diode; 超快速恢复二极管型号: | RF08L6S_11 |
厂家: | ROHM |
描述: | Super Fast Recovery Diode |
文件: | 总4页 (文件大小:1013K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
Super Fast Recovery Diode
RF08L6S
Series
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Standard Fast Recovery
2.0
2.6±0.2
Applications
General rectification
6
8
1
①
②
0.1±0.02
ꢀꢀꢀ 0.1
PMDS
2.0±0.2
Features
1.5±0.2
1)Small power mold type.(PMDS)
2)high switching speed
3)Low forward voltage
Structure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture date
Construction
Silicon epitaxial planar
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Tl=25°C)
Parameter
Conditions
Symbol
VRM
VR
Limits
600
600
0.8
Unit
V
Repetitive peak Reverse voltage
Reverse voltage
D≦0.5
Direct voltage
V
Glass epoxy substrate mounted
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Average rectified forward current
Io
A
Ta=25°C
Tl=100°C
IFSM
Forward current surge peak
20
A
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
55 to 150
Electrical characteristic (Tj=25°C)
Parameter
Conditions
IF=0.8A
Symbol
Min.
Typ.
1
Max.
1.3
Unit
V
VF
Forward voltage
-
VR=600V
Reverse current
IR
trr
-
-
-
0.01
50
10
70
23
μA
ns
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Reverse recovery time
Thermal Resistance
Rth(j-l)
-
°C/W
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.A
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Data Sheet
RF08L6S
ꢀ
10
10000
1000
100
10
100
10
1
f=1MHz
Tj=125℃
Tj=150℃
1
0.1
Tj=150℃
Tj=125℃
Tj=25℃
Tj=75℃
Tj=75℃
0.01
0.001
1
Tj=25℃
0.1
0
100
200
300
400
500
600
0
500
1000
1500
2000
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
FORWARD VOLTAGE:VF(mV)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VR-IR CHARACTERISTICS
VF-IF CHARACTERISTICS
60
50
40
30
1100
1050
1000
950
100
10
1
IF=0.8A
℃
f=1MHz
VR=0V
Tj=25℃
Tj=25
Tj=25℃
n=30pcs
VR=600V
n=30pcs
AVE:7.35nA
AVE:999.5mV
AVE:44.2pF
0.1
900
V
F DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
80
60
40
20
0
60
55
50
45
40
35
30
1000
IF=0.5A
IR=1A
1cyc
8.3ms
Ifsm
Ifsm
Irr=0.25*IR
Tj=25℃
8.3ms 8.3ms
1cyc
100
10
1
AVE:48.8ns
AVE:49.4A
1
10
NUMBER OF CYCLES
FSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISRESION MAP
I
30
25
20
15
10
5
1000
100
10
IM=10mA
IF=100mA
1000
100
10
Rth(j-a)
Rth(j-l)
time
300us
1m
Ifsm
t
AVE:9.80kV
AVE:2.70kV
1
On Glass Epoxi Board
0
0.1
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1
10
100
0.001 0.01
0.1
1
10
100
1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.A
Data Sheet
RF08L6S
ꢀ
Io
0A
0V
VR
t
D=t/T
1.8
1.6
1.4
1.2
1
VR=480V
Tj=150℃
1.4
1.2
1.8
1.6
1.4
1.2
1
Io
D.C.
0A
0V
D.C.
T
D.C.
D=0.8
D=0.8
D=0.5
half sin wave
D=0.2
D=0.1
D=0.0
VR
t
D=t/T
VR=480V
Tj=150℃
1
0.8
0.6
0.4
0.2
0
D=0.8
D=0.5
T
D=0.5
half sin wave
half sin wave
D=0.2
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
D=0.2
D=0.
30
D=0.1
90
D=0.05
120
D=0.0
90
0
0.5
1
1.5
2
0
30
60
150
0
60
120
150
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
LEAD TEMPARATURE:Tl(℃)
Derating Curve゙(Io-Tl)
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.A
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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