RF101L4S [ROHM]
Fast recovery diode; 快恢复二极管
| 型号： | RF101L4S |
| 厂家： | 
ROHM |
| 描述： | Fast recovery diode |
| 文件： | 总4页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF101L4S
Diodes
Fast recovery diode
RF101L4S
zApplications
zDimensions (Unit : mm)
zLand size figure (Unit : mm)
General rectification
2.0
zFeatures
2.6±0.2
1) Small power mold type
(PMDS)
2) Ultra low VF
6
6
3) Ultra high switching speed
4) Low switching loss
0.1±0.02
ꢀꢀꢀ 0.1
①
②
2.0±0.2
1.5±0.2
zConstructure
PMDS
Silicon epitaxial planar
zStructure
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture date
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
400
400
V
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
1
20
Io
IFSM
Tj
A
A
150
-55 to +150
℃
℃
Storage temperature
Tstg
(*1)Mounting on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Conditions
IF=1.0A
Symbol
Min.
Typ.
Max.
Unit
VF
IR
-
-
-
-
-
-
1.25
10
V
Reverse current
µA
ns
VR=400V
Reverse recovery time
25
IF=0.5A,IR=1A,Irr=0.25*IR
trr
1/3
RF101L4S
Diodes
zElectrical characteristic curves
1
10000
1000
100
10
100
10
1
f=1MHz
Ta=150℃
Ta=125℃
Ta=125℃
Ta=75℃
Ta=25℃
0.1
0.01
Ta=75℃
Ta=25℃
Ta=150℃
Ta=-25℃
Ta=-25℃
1
0.001
0.1
0
200
400
600
800 1000 1200
0
50 100 150 200 250 300 350 400
REVERSE VOLTAGE：VR(V)
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
VR-IR CHARACTERISTICS
1300
1200
1100
1000
900
500
450
400
350
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
Ta=25℃
IF=1A
n=30pcs
Ta=25℃
VR=400V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:41.8pF
AVE:24.8nA
AVE:1007mV
0
800
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
200
150
100
50
30
25
20
15
10
5
1000
100
10
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
1cyc
Ifsm
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:18.4ns
AVE:48.0A
0
0
1
1
10
100
trr DISPERSION MAP
Mounted on epoxy board
IFSM DISRESION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
IM=10mA
IF=100mA
3
1000
DC
Ifsm
t
2.5
2
tim
300u
1m
Rth(j-a)
D=1/2
100
10
1
Sin(θ＝180)
Rth(j-c)
1.5
1
0.5
0
0.1
1
10
100
0.001
0.1
10
1000
0
0.5
1
1.5
2
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
RF101L4S
Diodes
30
25
20
15
10
5
2
3
2
1
0
Io
Io
0A
0V
0A
0V
AVE：16.3kV
VR
VR
t
t
D=t/T
VR=200V
Tj=150℃
D=t/T
VR=200V
Tj=150℃
D=1/2
T
T
DC
1
AVE：4.60kV
Sin(θ＝180)
0
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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