RF1601T2DFH [ROHM]
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN;
| 型号： | RF1601T2DFH |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN 快速恢复二极管 局域网 |
| 文件： | 总4页 (文件大小：770K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
Fast recovery diodes
RF1601T2DFH
Applications
Dimensions (Unit : mm)
Structure
General rectification
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
10.0±0.3
ꢀꢀꢀ 0.1
Features
(1) (2) (3)
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
①
1.2
1.3
0.8
Construction
Silicon epitaxial planar
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
Manufacture Date
①
Absoslute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
200
Symbol
VRM
VR
Unit
V
V
200
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
16
Io
A
80
IFSM
Tj
A
150
C
C
Storage temoerature
55 to 150
Tstg
(*1)Business frequency, Rating of R-load, Tc=120C. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Conditions
Symbol Min.
Typ.
Max.
0.93
10
Unit
V
VF
IR
-
-
-
-
-
-
IF=8A
Reverse current
μA
ns
VR=200V
IF=0.5A,IR=1A,Irr=0.25*IR
Reverse recovery time
trr
30
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1/3
Data Sheet
RF1601T2DFH
ꢀ
Electrical characteristics curves
1000
100
10
Ta=150C
Ta=125C
10
10000
1000
100
10
f=1MHz
Ta=150C
1
Ta=125C
Ta=75C
Ta=25C
Ta=25C
0.1
0.01
Ta=75C
Ta=-25C
Ta=-25
C
1
0.001
1
0
100 200 300 400 500 600 700 800 900 100
0
0.1
0
5
10
15
20
25
30
0
50
100
150
200
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
320
315
310
305
300
295
290
285
280
275
270
890
880
870
860
850
840
100
90
80
70
60
50
40
30
20
10
0
Ta=25C
f=1MHz
VR=0V
Ta=25C
VR=200V
n=30pcs
Ta=25C
IF=8A
n=30pcs
n=10pcs
AVE:11.6nA
AVE:293.4pF
AVE:862.3mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
300
250
200
150
100
50
30
25
20
15
10
5
Ta=25C
IF=0.5A
Ifsm
1cyc
Ifsm
IR=1A
8.3ms 8.3ms
1cyc
Irr=0.25*IR
n=10pcs
8.3ms
100
10
1
AVE:210.0A
AVE:18.3ns
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISPERSION MAP
30
1000
100
10
100
Mounted on epoxy board
25
20
15
10
5
IM=100mA
IF=8A
Ifsm
t
DC
D=1/2
1ms
Rth(j-a)
Rth(j-c)
10
1
time
300us
Sin(=180)
0
0.1
0
5
10
15
20
25
30
35
40
1
10
100
0.001
0.01
0.1
1
10
100
1000
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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2/3
2011.05 - Rev.D
Data Sheet
RF1601T2DFH
ꢀ
30
25
20
15
10
5
40
35
30
25
20
15
10
5
40
Io
0A
0V
No break at 30kV
No break at 30kV
Io
0A
0V
VR
35
30
25
20
15
10
5
t
D=t/T
VR
DC
VR=100V
Tj=150C
DC
t
D=t/T
VR=100V
Tj=150
C
T
T
D=1/2
D=1/2
Sin(=180)
Sin(=180)
0
0
0
0
25
50
75
100
125
150
C=200pF
C=100pF
0
25
50
75
100
125
150
R=0
R=1.5k
CASE TEMPARATURE:Tc(C)
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Tc)
Derating Curve"(Io-Ta)
ESD DISPERSION MAP
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3/3
2011.05 - Rev.D
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R1120A
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