RF2001T4SFH [ROHM]
Rectifier Diode, 1 Phase, 1 Element, 20A, 430V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN;
| 型号： | RF2001T4SFH |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 20A, 430V V(RRM), Silicon, TO-220AB, TO-220FN, 3 PIN 二极管 快恢复二极管 |
| 文件： | 总4页 (文件大小：982K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Fast recovery diode
RF2001T4S
Applications
Dimensions (Unit : mm)
Structure
General rectification
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
10.0±0.3
ꢀꢀꢀ 0.1
Features
(1) (2) (3)
1) High reliability. (TO-220)
2) Low noise.
3) Very fast switching .
①
Construction
Silicon epitaxial planar
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
Manufacture Date
①
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
430
400
20
V
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)(*1)
Junction temperature
Io
A
100
150
IFSM
Tj
A
C
C
Storage temperature
55 to 150
Tstg
(*1)Business frequency, Rating of R-load, Tc=94CMAX.
Electrical characteristic (Ta=25C)
Parameter
Conditions
Symbol Min. Typ. Max.
Unit
V
VF
IR
Forward voltage
Reverse current
-
-
-
-
-
-
1.6
10
30
IF=20A
VR=400V
μA
ns
Reverse recovery time
trr
IF=0.5A,IR=1A Irr=0.25*IR
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2011.05 - Rev.B
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1/3
Data Sheet
RF2001T4S
ꢀ
Electrical characteristics curves
100
1000000
100000
10000
1000
100
1000
100
10
Ta=150C
Ta=75C
Ta=125C
f=1MHz
Ta=125C
10
Ta=25C
Ta=-25C
Ta=75C
Ta=150C
1
0.1
Ta=25C
Ta=-25C
10
1
0.01
0
50 100 150 200 250 300 350 400 450
0
200 400 600 800 1000 1200 1400 1600 1800
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
500
480
460
440
420
400
500
450
400
350
300
250
200
150
100
50
1600
1500
1400
1300
Ta=25C
f=1MHz
VR=0V
Ta=25C
IF=20A
Ta=25C
VR=400V
n=20pcs
n=20pcs
n=10pcs
AVE:442.1pF
AVE:55.8nA
AVE:1399mV
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25C
IF=0.5A
Ifsm
1cyc
Ifsm
IR=1A
8.3ms 8.3ms
1cyc
Irr=0.25*IR
8.3ms
n=10pcs
AVE:22.6ns
AVE:236.0A
0
1
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
I
FSM DISPERSION MAP
1000
100
10
100
10
1
50
D=1/2
IM=100mA
IF=1A
45
40
35
30
25
20
15
10
5
Ifsm
DC
t
Sin(=180)
1ms
Rth(j-a)
time
300us
Rth(j-c)
0
0.1
0.1
1
10
100
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
TIME:t(ms)
TIME:t(s)
Rth-t CHARACTERISTICS
IFSM-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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2/3
2011.05 - Rev.B
Data Sheet
RF2001T4S
ꢀ
30
25
20
15
10
5
50
45
40
35
50
45
40
35
30
25
20
15
10
5
Io
0A
0V
No break at 30kV No break at 30kV
Io
0A
0V
VR
t
D=t/T
VR
VR=200V
Tj=150C
t
DC
D=t/T
T
VR=200V
Tj=150C
T
30
D=1/2
D=1/2
DC
AVE:8.8kV
25
20
15
10
5
Sin(=180)
Sin(=180)
0
0
0
C=200pF
C=100pF
C=150pF
0
25
50
75
100
125
150
0
25
50
75
100
125
150
R=0
R=1.5k
R=330
AMBIENT TEMPERATURE:Ta(C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Ta)
Derating Curve"(Io-Tc)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.B
Notice
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