RF4E075AT [ROHM]
RF4E075AT是小型大功率型封装的中功率MOSFET，适用于开关、负荷开关用途。;
| 型号： | RF4E075AT |
| 厂家： | 
ROHM |
| 描述： | RF4E075AT是小型大功率型封装的中功率MOSFET，适用于开关、负荷开关用途。 开关 |
| 文件： | 总12页 (文件大小：1372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF4E075AT
ꢀꢀPch -30V -7.5A Middle Power MOSFET
Datasheet
ꢀꢀ
llOutline
HUML2020L8
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VDSS
-30V
21.7mΩ
±7.5A
2W
ꢀ
RDS(on)(Max.)
ꢀ
ID
ꢀ
PD
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llInner circuit
llFeatures
1) Low on - resistance.
2) High Power small mold Package
(HUML2020L8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
3000
TCR
JT
Load switch
Marking
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
-30
Unit
V
VDSS
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID
±7.5
A
*1
ID,pulse
±30
A
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
±20
V
*2
EAS
10.6
-2.7
mJ
A
*2
IAS
*3
PD
Power dissipation
2
W
℃
℃
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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© 2015 ROHMCo., Ltd. All rights reserved.
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1/11
20150218 - Rev.001
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RF4E075AT
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
-
Typ. Max.
*3
RthJA
Thermal resistance, junction - ambient
-
62.5 ℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
-30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = -1mA
D
-
-
ΔV
I = -1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
-22
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= -30V, V = 0V
-1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±20V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
-2.5
nA
V
GS
DS
= V , I = -1mA
-1.0
DS
GS
D
I = -1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
2.9
-
mV/℃
mΩ
S
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
= -10V, I = -7.5A
-
-
16.7 21.7
24.4 31.7
GS
GS
D
Static drain - source
on - state resistance
*4
RDS(on)
V
= -4.5V, I = -7.5A
D
Forward Transfer
Admittance
|Y |*4
V
DS
= -5.0V, I = -7.5A
6.5
-
-
fs
D
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Tr1: L ⋍ 2mH, V = -15V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
ch
*3 MOUNTED ON 40mm×40mm Cu BOARD
*4 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
1000
180
140
10
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= -15V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*4
V
DD
⋍ -15V,V = -10V
GS
td(on)
tr*4
I = -3.75A
18
D
ns
*4
td(off)
R ⋍ 4Ω
Turn - off delay time
Fall time
60
L
tf*4
R = 10Ω
35
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
22
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
V
= -10V
= -4.5V
-
-
-
-
-
-
-
-
GS
GS
*4
Qg
Total gate charge
11
V
⋍ -15V
I = -7.5A
DD
*4
V
Qgs
Gate - Source charge
Gate - Drain charge
3.4
D
*4
Qgd
4.2
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
IS
Conditions
Unit
A
Min.
-
Max.
Body diode continuous
forward current
-
-1.67
T = 25℃
a
Body diode
pulse current
*1
ISP
-
-
-
-
-30
A
V
*4
VSD
Forward voltage
V
GS
= 0V, I = -1.67A
-1.2
S
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Transconductance vs. Drain Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
8/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/11
20150218 - Rev.001
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RF4E075AT
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
10/11
20150218 - Rev.001
RF4E075AT
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
11/11
20150218 - Rev.001
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