RF6E045AJ [ROHM]
RF6E045AJ是低导通电阻、大功率封装的中功率MOSFET。适用于开关用途。;
| 型号： | RF6E045AJ |
| 厂家： | 
ROHM |
| 描述： | RF6E045AJ是低导通电阻、大功率封装的中功率MOSFET。适用于开关用途。 开关 |
| 文件： | 总12页 (文件大小：1293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF6E045AJ
ꢀꢀNch 30V 4.5A Middle Power MOSFET
Datasheet
ꢀꢀ
llOutline
TUMT6
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VDSS
30V
23.7mΩ
±4.5A
1W
ꢀ
RDS(on)(Max.)
ꢀ
ID
ꢀ
PD
SOT-363T
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llInner circuit
llFeatures
1) Low on - resistance.
2) High Power Package (TUMT6).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TR
CJ
Marking
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Symbol
Value
30
Unit
V
VDSS
ID
±4.5
A
*1
ID,pulse
±18
A
VGSS
Gate - Source voltage
Power dissipation
±12
V
*2
PD
1
W
℃
℃
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
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1/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
-
Typ. Max.
*2
RthJA
Thermal resistance, junction - ambient
-
125 ℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = 1mA
D
-
-
ΔV
I = 1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
18
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= 30V, V = 0V
1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±12V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
1.5
nA
V
GS
DS
= V , I = 1mA
0.5
DS
GS D
I = 1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
-2
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
= 4.5V, I = 4.5A
-
-
-
16.9 23.7
23.9 33.5
GS
GS
D
Static drain - source
on - state resistance
*3
RDS(on)
RG
|Y |*3
mΩ
Ω
V
= 2.5V, I = 4.5A
D
Gate input resistance
f = , open drain
2.7
-
Forward Transfer
Admittance
V
DS
= 5V, I = 4.5A
6
-
-
S
fs
D
*1 Pw≦10μs , Duty cycle≦1%
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
900
100
70
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= 15V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*3
td(on)
V
⋍ 15V,V = 4.5V
DD GS
15
tr*3
I = 2.2A
15
D
ns
*3
td(off)
R ⋍ 6.8Ω
Turn - off delay time
Fall time
40
L
tf*3
R = 10Ω
10
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
8.1
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*3
Qg
Total gate charge
-
-
-
-
-
-
V
⋍ 15V,
I = 4.5A,
DD
*3
Qgs
Gate - Source charge
Gate - Drain charge
2.1
D
V
GS
= 4.5V
*3
Qgd
2.0
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
IS
Conditions
Unit
A
Min.
-
Max.
0.8
Body diode continuous
forward current
-
T = 25℃
a
Body diode
pulse current
*1
ISP
-
-
-
-
18
A
V
*3
VSD
V
GS
= 0V, I = 0.8A
S
Forward voltage
1.2
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Tranceconductance ꢀvs. Drain
Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
8/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/11
20150730 - Rev.002
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RF6E045AJ
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.2-1 Gate Charge Measurement Circuit
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Fig.1-2 Switching Waveforms
Fig.2-2 Gate Charge Waveform
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llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
10/11
20150730 - Rev.002
RF6E045AJ
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
11/11
20150730 - Rev.002
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