RFX10 [ROHM]
Super Fast Recovery Diode;
| 型号： | RFX10 |
| 厂家： | 
ROHM |
| 描述： | Super Fast Recovery Diode |
| 文件： | 总4页 (文件大小：994K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Super Fast Recovery Diode
RFX10TF6S
Series
Dimensions (Unit : mm)
Structure
+0.3
+0.3
-0.1
-0.1
Ultra Fast Recovery
+0.2
-0.1
Applications
General rectification
RFX10
TF6S
(3)
(1)
Features
1)Single type.(TO-220)
2)High switching speed
3)Soft Recovery
(3)
(1)
+0.1
-0.05
Construction
Silicon epitaxial planer
Absolute maximum ratings (Tc=25C)
Parameter
Conditions
Duty 0.5
Limits
600
600
10
Symbol
VRM
VR
Unit
V
Repetitive peak reverse voltage
Reverse voltage
Direct voltage
V
60Hz half sin wave, Resistance load,
Average rectified forward current
Io
Tc=57C
A
60Hz half sin wave, Non-repetitive
IFSM
Forward current surge peak
100
A
one cycle peak value, Tj=25C
Junction temperature
Storage temperature
150
Tj
C
C
55 to 150
Tstg
Electrical characteristics (Tj=25C)
Parameter
Conditions
IF=10A
Min.
Typ.
2
Max.
2.5
10
Symbol
VF
Unit
V
Forward voltage
-
-
-
-
VR=600V
0.15
16
-
IR
Reverse current
A
ns
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
30
Reverse recovery time
Thermal Resistance
trr
3.5
Rth(j-c)
C / W
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2011.06 - Rev.A
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1/3
Data Sheet
RFX10TF6S
ꢀ
Electrical characteristics curves
100
1000000
100000
10000
1000
100
1000
100
10
f=1MHz
Tj=125C
Tj=75C
Tj=150C
Tj=125
Tj=25C
Tj=150
10
Tj=25
Tj=25C
Tj=75
1
10
1
0.1
0
100
200
300
400
500
600
0
5
10
15
20
25
30
0
1000
2000
3000
4000
5000
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
250
240
230
220
210
200
1000
100
10
2300
2200
2100
2000
1900
1800
Ta=25C
f=1MHz
VR=0V
Tｊ=25C
VR=600V
Tｊ=25C
IF=10A
n=20pcs
n=10pcs
n=20pcs
AVE : 140.3nA
AVE : 224.6pF
AVE : 1976mV
1
V
F DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
200
150
100
50
30
25
20
15
10
5
Tｊ=25C
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
AVE : 163.5A
AVE : 15.8ns
IFSM
1cyc
IFSM
8.3ms 8.3ms
1cyc.
8.3ms
1
0
0
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
I
FSM DISRESION MAP
10
1000
100
10
10
8
Rth(j-c)
IFSM
time
6
AVE : 5.80kV
1
4
AVE : 1.08kV
2
0
0.1
C=100pF
C=200pF
R=0
1
10
100
0.001
0.01
0.1
1
10
100
1000
R=1.5k
TIME : t(ms)
TIME : t(s)
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RFX10TF6S
ꢀ
Io
0A
0V
45
40
35
16
14
12
10
8
D.C.
VR
D.C.
t
D=0.8
D=0.5
D=t/T
R=480V
Tj=150C
V
D=0.8
D=0.5
30
25
20
15
10
5
half sin wave
D=0.2
half sin wave
D=0.1
D=0.05
D=0.2
D=0.1
6
4
D=0.05
2
0
0
0
30
60
90
120
150
0
3
6
9
12
15
18
CASE TEMPARATURE : Tc(C)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
Derating Curve"(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
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R1120A
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