RGCL80TS60D_技术文档

RGCL80TS60DGC13

Datasheet

600V 40A Field Stop Trench IGBT

Outline

TO-247GE

V_CES

I_C(100°C)

V_{CE(sat) (Typ.)}

P_D

600V

40A

1.4V

148W

(1)(2)(3)

Features

Inner Circuit

1) Low Collector - Emitter Saturation Voltage

2) Soft Switching

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

*1

3) Built in Very Fast & Soft Recovery FRD

(RFN - Series)

(1)

*1 Built in FRD

4) Pb - free Lead Plating ; RoHS Compliant

Packaging Specifications

Packaging

Tube

Applications

Partial Switching PFC

Reel Size (mm)

-

Discharge Circuit

Brake for Inverter

Tape Width (mm)

Type

Basic Ordering Unit (pcs)

600

C13

Taping Code

RGCL80TS60D

Marking

Absolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

V

600

Gate - Emitter Voltage

V

30

T_C= 25°C

65

A

Collector Current

T_C= 100°C

I_C

40

A

*1

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

160

A

I_CP

T_C= 25°C

I_F

35

20

A

T_C= 100°C

A

*1

100

A

I_FP

T_C= 25°C

P_D

T_j

148

W

°C

T_C= 100°C

74

Operating Junction Temperature

40 to +175

55 to +175

T_stg

Storage Temperature

*1 Pulse width limited by T_jmax.

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2021.09 - Rev.A

1/11

Datasheet

RGCL80TS60DGC13

Thermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

1.01

2.28

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

-

°C/W

IGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

V

Min.

600

Max.

-

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

-

I_CES

V_CE= 600V, V_GE= 0V

Collector Cut - off Current

-

10

200

6.5

μA

nA

V

I_GES

V_GE= 30V, V_CE= 0V

Gate - Emitter Leakage Current

-

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 30.0mA

4.5

5.5

I_C= 40A, V_GE= 15V

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

-

1.4

1.6

1.8

-

V

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2021.09 - Rev.A

2/11

Datasheet

RGCL80TS60DGC13

IGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

2340

55

Parameter

Symbol

Conditions

Unit

pF

Min.

Max.

C_ies

C_oes

C_res

Q_g

V_CE= 30V

Input Capacitance

-

V_GE= 0V

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

f = 1MHz

43

V_CE= 300V

98

Q_ge

Q_gc

t_d(on)

t_r

I_C= 40A

20

nC

V_GE= 15V

38

I_C= 40A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 25°C

53

34

ns

mJ

ns

t_d(off)

t_f

Turn - off Delay Time

Fall Time

227

204

1.11

1.68

48

Inductive Load

*Eon includes diode

reverse recovery

I_C= 40A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 175°C

E_on

E_off

t_d(on)

t_r

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

66

t_d(off)

t_f

Turn - off Delay Time

Fall Time

255

310

1.51

2.30

Inductive Load

*Eon includes diode

reverse recovery

I_C= 160A, V_CC= 480V

V_P= 600V, V_GE= 15V

R_G= 60Ω, T_j= 175°C

E_on

E_off

Turn - on Switching Loss

Turn - off Switching Loss

mJ

-

Reverse Bias Safe Operating Area

RBSOA

FULL SQUARE

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2021.09 - Rev.A

3/11

Datasheet

RGCL80TS60DGC13

FRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

V

Min.

Max.

I_F= 20A

V_F

T_j= 25°C

Diode Forward Voltage

Diode Reverse Recovery Time

-

1.45

1.25

1.9

-

T_j= 175°C

t_rr

-

58

6.3

-

ns

A

I_F= 20A

Diode Peak Reverse Recovery

Current

I_rr

V

_CC= 400V

di_F/dt = 200A/μs

Diode Reverse Recovery

Charge

Q_rr

E_rr

t_rr

0.20

7.4

μC

μJ

ns

A

T_j= 25°C

Diode Reverse Recovery Energy

Diode Reverse Recovery Time

256

10.4

1.35

146.5

I_F= 20A

Diode Peak Reverse Recovery

Current

I_rr

V_CC= 400V

di_F/dt = 200A/μs

T_j= 175°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

μC

μJ

Diode Reverse Recovery Energy

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2021.09 - Rev.A

4/11

Datasheet

RGCL80TS60DGC13

Electrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature

Fig.2 Collector Current vs. Case Temperature

180

160

140

120

100

80

70

60

50

40

30

20

60

40

ꢀ

T_j≦175ºC

_GE≧15V

10

0

20

V

0

25

50

75 100 125 150 175

0

25

50

75 100 125 150 175

Case Temperature : Tc [ºC]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

1000

200

180

160

140

120

100

80

10µs

100

10

100µs

1

60

0.1

0.01

40

T_C= 25ºC

Single Pulse

T_j≦175ºC

V_GE=15V

20

0

1

10

100

1000

0

200

400

600

800

Collector To Emitter Voltage : V_CE[V]

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2021.09 - Rev.A

5/11

Datasheet

RGCL80TS60DGC13

Electrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

160

T_j= 25ºC

T_j= 175ºC

V_GE= 15V

V_GE= 12V

V_GE= 20V

140

120

100

80

V_GE= 20V

120

100

80

60

40

20

0

V_GE= 12V

V_GE= 10V

V_GE= 15V

V_GE= 10V

V_GE= 8V

60

40

20

0

1

2

3

4

5

0

1

2

3

4

5

Collector To Emitter Voltage : V_CE[V]

Fig.7 Typical Transfer Characteristics

Fig.8 Typical Collector To Emitter Saturation Voltage

vs. Junction Temperature

60

4

V_CE= 10V

V_GE= 15V

50

40

30

20

10

0

3

I_C= 80A

2

I_C= 40A

1

0

I_C= 20A

T_j= 175ºC

T_j= 25ºC

0

2

4

6

8

10

12

25

50

75

100

125

150

175

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[ºC]

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2021.09 - Rev.A

6/11

Datasheet

RGCL80TS60DGC13

Electrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage

Fig.10 Typical Collector To Emitter Saturation Voltage

vs. Gate To Emitter Voltage

20

T_j= 175ºC

T_j= 25ºC

I_C= 80A

15

I_C= 80A

I_C= 40A

I_C= 20A

10

5

I_C= 20A

5

0

5

10

15

20

5

10

15

20

Gate To Emitter Voltage : V_GE[V]

Fig.12 Typical Switching Time

vs. Gate Resistance

Fig.11 Typical Switching Time

vs. Collector Current

1000

t_f

t_d(off)

100

t_r

t_d(on)

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive ｌoad

V_CC=400V, I_C=40A

V_GE=15V, T_j=175ºC

Inductive ｌoad

t_r

10

0

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

0

10

20

30

40

50

Gate Resistance : R_G[Ω]

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2021.09 - Rev.A

7/11

Datasheet

RGCL80TS60DGC13

Electrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

Fig.14 Typical Switching Energy Losses

vs. Collector Current

vs. Gate Resistance

10

E_off

E_on

E_off

1

E_on

0.1

0.01

0.1

V_CC=400V, I_C=40A

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

V_GE=15V, T_j=175ºC

Inductive ｌoad

0.01

0

10

20

30

40

50

0

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

Fig.16 Typical Gate Charge

10000

1000

100

10

15

10

5

Cies

Coes

Cres

f=1MHz

V_GE=0V

T_j=25ºC

V_CC=300V

I_C=40A

T_j=25ºC

1

0

0.01

0.1

1

10

100

0

10 20 30 40 50 60 70 80 90 100

Gate Charge : Q_g[nC]

Collector To Emitter Voltage : V_CE[V]

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2021.09 - Rev.A

8/11

Datasheet

RGCL80TS60DGC13

Electrical Characteristic Curves

Fig.17 Typical Diode Forward Current

Fig.18 Typical Diode Reverse Recovery Time

vs. Forward Current

vs. Forward Voltage

400

80

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

300

200

100

0

60

40

T_j= 175ºC

T_j= 25ºC

20

T_j= 175ºC

T_j= 25ºC

0

10

20

30

40

50

0

0.5

1

1.5

2

2.5

3

Forward Voltage : V_F[V]

Forward Current : I_F[A]

Fig.19 Typical Diode Reverse Recovery Current

Fig.20 Typical Diode Reverse Recovery Charge

vs. Forward Current

20

2.5

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

2

15

1.5

T_j= 175ºC

10

1

5

0.5

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

T_j= 25ºC

10

T_j= 25ºC

0

20

30

40

50

0

10

20

30

40

50

Forward Current : I_F[A]

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2021.09 - Rev.A

9/11

Datasheet

RGCL80TS60DGC13

Electrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

10

1

D= 0.5

0.2

0.1

P_DM

0.1

Single Pulse

0.001

t1

0.01

0.02

t2

Duty=t1/t2

Peak T_j=P_DM×Z_thJCT_C

0.05

0.01

0.0001

0.01

0.1

1

Pulse Width : t1[s]

Fig.22 Diode Transient Thermal Impedance

10

1

D= 0.5

1

0.2

0.1

P_DM

Single Pulse

0.01

0.1

0.01

0.05 0.02

t1

t2

Duty=t1/t2

Peak T_j=P_DM×Z_thJCT_C

0.0001

0.001

0.01

0.1

1

Pulse Width : t1[s]

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2021.09 - Rev.A

10/11

Datasheet

RGCL80TS60DGC13

Inductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

V_GE

D.U.T.

10%

VG

90%

I_C

10%

t_d(off)

t_f

t_d(on)

t_r

Fig.23 Inductive Load Circuit

t_on

t_off

t_{rr ,}Q_rr

I_F

V_CE

di_F/dt

10%

V_CE(sat)

I_rr

E_on

E_off

Fig.25 Diode Reverce Recovery Waveform

Fig.24 Inductive Load Waveform

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2021.09 - Rev.A

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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non-compliance with any applicable laws or regulations.

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More detail product informations and catalogs are available, please contact us.

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R1107

B

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

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liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001


型号：	RGCL80TS60D
厂家：	ROHM
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RGCL80TS60D [ROHM]

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