RGPR30BM40HR [ROHM]
RGPR30BM40是适合点火线圈驱动电路及电磁阀驱动电路的低VCE(sat)的Ignition IGBT。为车载用高可靠性产品。;
| 型号： | RGPR30BM40HR |
| 厂家： | 
ROHM |
| 描述： | RGPR30BM40是适合点火线圈驱动电路及电磁阀驱动电路的低VCE(sat)的Ignition IGBT。为车载用高可靠性产品。 驱动 双极性晶体管 |
| 文件： | 总10页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGPR30BM40
Datasheet
400V 30A Ignition IGBT
lOutline
TO-252
BVCES
IC
40030V
30A
(2)
VCE(sat) (Typ.)
EAS
(1)
1.6V
(3)
300mJ
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Self-Clamped Inductive Switching Energy
3) Built in Gate-Emitter Protection Diode
4) Built in Gate-Emitter Resistance
(2)
(1) Gate
(2) Collector
(3) Emitter
(1)
5) Qualified to AEC-Q101
(3)
6) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Taping
Reel Size (mm)
330
16
lApplications
Ignition Coil Driver Circuits
Tape Width (mm)
Type
Solenoid Driver Circuits
Basic Ordering Unit (pcs)
2,500
Packing Code
TL
RGPR30BM40
Marking
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VEC
Value
430
Unit
V
Emitter-Collector Voltage (VGE = 0V)
Gate - Emitter Voltage
25
V
VGES
IC
V
10
Collector Current
30
A
Tj = 25°C
EAS
300
mJ
mJ
W
°C
°C
Avalanche Energy (Single Pulse)
*2
Tj = 150°C
180
EAS
PD
Tj
Power Dissipation
125
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
Tstg
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
1/9
Datasheet
RGPR30BM40
lThermal Resistance
Values
Typ.
Parameter
Symbol
Rθ(j-c)
Unit
Min.
-
Max.
1.20
Thermal Resistance IGBT Junction - Case
-
°C/W
lElectrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
IC = 2mA, VGE = 0V
Collector - Emitter Breakdown
Voltage
BVCES Tj = 25°C
Tj = -40 to 175°C*2
370
365
400
-
430
435
V
V
Emitter - Collector Breakdown
Voltage
BVEC
IC = -10mA, VGE = 0V
IG = 5mA, VCE = 0V
25
35
-
-
V
V
Gate - Emitter Breakdown
Voltage
BVGES
12
17
VCE = 250V, VGE = 0V
Tj = 25°C
ICES
Collector Cut - off Current
-
-
-
-
7
μA
μA
Tj = 150°C*2
100
IGES
VGE = 10V, VCE = 0V
Gate - Emitter Leakage Current
mA
0.4
0.6
1.2
VCE = 5V, IC = 12mA
Gate - Emitter Threshold
Voltage
VGE(th) Tj = 25°C
Tj = 150°C*2
1.3
-
1.7
1.3
2.1
-
V
V
IC = 12A, VGE = 5V
Collector - Emitter Saturation
Voltage
VCE(sat) Tj = 25°C
Tj = 150°C
-
-
1.60
1.80
2.00
-
V
V
IC = 5A, VGE = 4.5V
Collector - Emitter Saturation
Voltage
VCE(sat) Tj = 25°C
Tj = 150°C
-
-
1.17
1.19
1.50
-
V
V
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
2/9
Datasheet
RGPR30BM40
lElectrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
IC = 12A, VGE = 4V
Collector - Emitter Saturation
Voltage
VCE(sat) Tj = 25°C
Tj = 150°C
-
-
-
-
-
1.70
1.90
1330
220
71
2.10
V
V
-
-
-
-
Cies
Coes
Cres
VCE = 10V
VGE = 0V
f = 1MHz
Input Capacitance
Output Capacitance
pF
nC
Reverse Transfer Capacitance
VCE = 12V, IC = 10A,
VGE = 5V
Qg
Total Gate Charge
-
22
-
Turn - on Delay Time*1,*2
Rise Time*1,*2
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
0.11
0.19
0.18
1.4
0.50
IC = 8A, VCC = 300V,
VGE = 5V, RG = 100Ω,
L=5mH, Tj=25°C
0.10
0.50
μs
μs
Turn - off Delay Time*1,*2
Fall Time*1,*2
0.9
4.0
0.8
1.8
5.5
Turn - on Delay Time*1
Rise Time*1
-
-
-
-
0.18
0.21
1.7
-
-
-
-
IC = 8A, VCC = 300V,
VGE = 5V, RG = 100Ω,
L=5mH, Tj=150°C
Turn - off Delay Time*1
Fall Time*1
3.0
L = 5mH, VGE = 5V,
VCC = 30V, RG = 1kΩ,
EAS
Avalanche Energy (Single Pulse)
Tj = 25°C
300
180
-
-
-
-
mJ
mJ
Tj = 150°C*2
RG
Gate Series Resistance
Gate - Emitter Resistance
70
8
100
16
130
24
Ω
RGE
kΩ
*1) Assurance items according to our measurement definition (Fig.18)
*2) Design assurance items
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
3/9
Datasheet
RGPR30BM40
lElectrical Characteristic Curves
Fig.1 Typical Output Characteristics
Fig.2 Typical Output Characteristics
30
30
Tj= 25ºC
VGE= 10V
Tj= -40ºC
VGE= 10V
VGE= 4V
25
20
15
10
5
25
20
15
10
5
VGE= 8V
VGE= 5V
VGE= 8V
VGE= 5V
VGE= 4V
VGE= 4.5V
VGE= 4.5V
VGE= 3.5V
VGE= 3.5V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.3 Typical Output Characteristics
Fig.4 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
30
1.4
Tj= 175ºC
VGE= 10V
VGE= 8V
IC= 5A
25
20
15
10
5
1.3
VGE= 3.5V
4.5V
4V
VGE= 5V
VGE= 4.5V
1.2
1.1
1
VGE= 4V
VGE= 3.5V
5V
8V
10V
0
0
1
2
3
4
5
-50
0
50
100
150
200
Collector To Emitter Voltage : VCE[V]
Junction Temperature : Tj [ºC]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
4/9
Datasheet
RGPR30BM40
lElectrical Characteristic Curves
Fig.5 Typical Collector To Emitter Saturation
Fig.6 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
Voltage vs. Junction Temperature
2
4.5
VGE= 5V
IC= 10A
IC= 30A
4
3.5
3
VGE= 3.5V
1.9
1.8
20A
4V
1.7
2.5
2
4.5V
10A
5A
1.6
1.5
1.5
5V
ꢀ1
1.4
0.5
10V
150
8V
4.5A
100
1A
150
1.3
0
-50
0
50
100
200
-50
0
50
200
Junction Temperature : Tj [ºC]
Junction Temperature : Tj [ºC]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Gate To Emitter Threshold Voltage
vs. Junction Temperature
2.5
30
VCE= 5V
IC= 10mA
VCE= 5V
2.3
25
20
15
10
5
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
Tj= 175ºC
Tj= 25ºC
Tj= -40ºC
0
0
1
2
3
4
5
-50
0
50
100
150
200
Gate to Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
5/9
Datasheet
RGPR30BM40
lElectrical Characteristic Curves
Fig.9 Typical Leakage Current
vs. Junction Temperature
10000
Fig.10 Typical Collector To Emitter Breakdown
Voltage vs. Junction Temperature
410
VGE= 0V
1000
VEC= 25V
ICES= 2mA
100
400
390
380
VCES= 300V
10
1
ICES= 1mA
VCES= 250V
0.1
0.01
-50
0
50
100
150
200
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Junction Temperature : Tj [ºC]
Fig.11 Typical Self Clamped Inductive
Switching Current vs. Inductance
Fig.12 Typical Gate Charge
5
40
VCC= 30V
VGE= 5V
RG= 1kΩ
35
30
25
20
15
10
5
4
3
2
1
0
VCC= 12V
IC= 10A
Tj= 25ºC
0
0
5
10
15
20
25
0
1
2
3
4
5
6
7
8
9
10
Inductance : L [mH]
Gate Charge : Qg [nC]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
6/9
Datasheet
RGPR30BM40
lElectrical Characteristic Curves
Fig.14 Typical Switching Time
vs. Junction Temperature
10
Fig.13 Typical Capacitance
vs. Collector To Emitter Voltage
10000
1000
100
10
VCC= 300V, IC= 8A,
VGE= 5V, L= 5mH
Cies
tf
td(off)
1
Coes
tr
f= 1MHz
VGE= 0V
Tj= 25ºC
Cres
10
td(on)
0.1
1
0
25 50 75 100 125 150 175 200
Junction Temperature : Tj [ºC]
0.01
0.1
1
100
Collector To Emitter Voltage : VCE[V]
Fig.15 Forward Bias Safe Operating Area
1000
100
10
10µs
100µs
1ms
1
0.1
0.01
10ms
TC= 25ºC
Single Pulse
1
10
100
1000
Collector To Emitter Voltage : VCE[V]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
7/9
Datasheet
RGPR30BM40
lElectrical Characteristic Curves
Fig.16 Transient Thermal Impedance
1
0.1
D= 0.5
0.2
0.3
0.1
PDM
Single Pulse
t1
0.01
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
C1
C2
C3
R1
615.3u 3.003m 1.360m 231.2m 160.8m 408.0m
R2
R3
0.02
0.05
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
8/9
Datasheet
RGPR30BM40
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
10%
VG
90%
10%
IC
Fig.17 Inductive Load Switching Circuit
td(off)
td(on)
tf
tr
ton
toff
VCE
VCE(sat)
Fig.18 Inductive Load Switching Waveform
lSelf Clamped Inductive Switching Circuit and Waveform
Vclamp
IC
D.U.T.
VCE
VCE(sat)
VCC
VG
EAS
Fig.20 Self Clamped Inductive Switching Waveform
Fig.19 Self Clamped Inductive Switching Ciruit
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
9/9
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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