RGS30TSX2DHR [ROHM]
RGS30TSX2DHR适用于面向车载和工业设备的通用变频器，是短路耐量为10µs的产品。RGS系列实现了低导通损耗（Vce(sat.)），有助于应用的小型、高效化。符合AEC-Q101标准。;
| 型号： | RGS30TSX2DHR |
| 厂家： | 
ROHM |
| 描述： | RGS30TSX2DHR适用于面向车载和工业设备的通用变频器，是短路耐量为10µs的产品。RGS系列实现了低导通损耗（Vce(sat.)），有助于应用的小型、高效化。符合AEC-Q101标准。 |
| 文件： | 总11页 (文件大小：1412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGS30TSX2DHR
1200V 15A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
1200V
15A
1.7V
267W
(1)(2)(3)
lInner Circuit
(2)
(3)
lFeatures
(1) Gate
(2) Collector
(3) Emitter
1) Low Collector - Emitter Saturation Voltage
2) Short Circuit Withstand Time 10μs
3) Qualified to AEC-Q101
*1
(1)
*1 Built in FRD
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplication
Reel Size (mm)
-
General Inverter
Tape Width (mm)
Type
-
450
for Automotive and Industrial Use
Basic Ordering Unit (pcs)
Packing Code
Marking
C11
RGS30TSX2D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
1200
Gate - Emitter Voltage
±30
V
TC = 25°C
30
A
Collector Current
TC = 100°C
IC
15
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
45
30
A
ICP
TC = 25°C
IF
IF
A
TC = 100°C
15
A
*1
45
A
IFP
TC = 25°C
PD
PD
Tj
267
W
W
°C
°C
TC = 100°C
133
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
Tstg
*1 Pulse width limited by Tjmax.
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
1/11
Datasheet
RGS30TSX2DHR
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.56
1.10
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
1200
-
VCE = 1200V, VGE= 0V
ICES Tj = 25℃
Collector Cut - off Current
-
-
-
10
-
μA
Tj = 175℃*2
1
mA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 2.3mA
-
-
±500
7.0
nA
V
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 15A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.70
2.20
2.10
-
V
V
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
2/11
Datasheet
RGS30TSX2DHR
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
1272
66
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V
Coes VGE = 0V
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
7.6
41
VCE = 500V
Qge IC = 15A
Qgc VGE = 15V
td(on)
11
nC
17
30
IC = 15A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
8.5
70
ns
mJ
ns
Turn - off Delay Time
Fall Time
128
0.74
0.6
29
Eon
Eoff
td(on)
tr
Turn-on Switching Loss
Turn-off Switching Loss
Turn - on Delay Time
Rise Time
IC = 15A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
10
td(off)
tf
Turn - off Delay Time
Fall Time
69
120
0.81
0.65
Eon
Eoff
Turn-on Switching Loss
Turn-off Switching Loss
mJ
-
IC = 45A, VCC = 1050V
Vp = 1200V, VGE = 15V
RG = 50Ω, Tj = 175°C
Reverse Bias
Safe Operating Area
RBSOA
tsc
FULL SQUARE
V
CC ≤ 600V
VGE = 15V, Tj = 25°C
Short Circuit Withstand Time
Short Circuit Withstand Time
10
8
-
-
-
-
μs
μs
V
CC ≤ 600V
VGE = 15V, Tj = 150°C
*2
tsc
*2 Design assurance without measurement
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
3/11
Datasheet
RGS30TSX2DHR
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 15A
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.65
1.85
2.10
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
157
12.8
1.2
-
-
-
-
-
-
-
-
ns
A
IF = 15A
Diode Peak Reverse
Recovery Current
Irr
VCC = 600V
diF/dt = 500A/μs
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
μC
μJ
ns
A
Diode Reverse Recovery
Energy
281
257
15.4
2.4
Diode Reverse Recovery
Time
IF = 15A
Diode Peak Reverse
Recovery Current
Irr
VCC = 600V
diF/dt = 500A/μs
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Diode Reverse Recovery
Energy
775
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
4/11
Datasheet
RGS30TSX2DHR
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
400
Fig.2 Collector Current
vs. Case Temperature
40
30
20
10
0
300
200
100
0
Tj ≤ 175ºC
VGE ≥ 15V
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
60
100
10μs
45
30
15
10
100μs
1
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0
0.01
0
300 600 900 1200 1500
1
10
100
1000 10000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
5/11
Datasheet
RGS30TSX2DHR
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
45
45
Tｊ = 175ºC
40
Tｊ = 25ºC
40
VGE = 12V
35
30
25
20
15
10
5
35
VGE = 20V
VGE = 15V
VGE = 20V
30
VGE = 15V
25
20
15
10
5
VGE = 12V
VGE = 10V
VGE = 10V
VGE = 8V
VGE = 8V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector To Emitter Saturation
Fig.7 Typical Transfer Characteristics
45
Voltage vs. Junction Temperature
4
VGE = 15V
IC = 30A
VCE = 10V
40
35
30
25
20
15
10
3
2
1
0
IC = 15A
IC = 7.5A
5
0
Tj = 175ºC
Tj = 25ºC
0
2
4
6
8 10 12 14 16
25 50 75 100 125 150 175
Junction Temperature : Tj [°C ]
Gate To Emitter Voltage : VGE [V]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
6/11
Datasheet
RGS30TSX2DHR
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10
10
Tj = 175ºC
Tj = 25ºC
8
8
IC = 30A
IC = 30A
6
4
2
0
6
IC = 15A
IC = 7.5A
IC = 15A
IC = 7.5A
4
2
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
tf
tf
100
100
10
1
td(off)
td(off)
td(on)
ｔd(on)
10
1
tr
tr
VCC = 600V, IC = 15A,
VGE = 15V, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0
10
20
30
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
7/11
Datasheet
RGS30TSX2DHR
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
10
10
Eon
Eon
1
1
Eoff
Eoff
0.1
0.1
0.01
VCC = 600V, VGE = 15V,
IC = 15A, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.01
0
10
20
30
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
10000
VCC = 300V
1000
100
10
Cies
10
5
VCC = 500V
Coes
f = 1MHz
VGE = 0V
Tj = 25ºC
IC = 15A
Tj = 25ºC
Cres
1
0
0.01
0.1
1
10
100
0
15
30
45
Collector To Emitter Voltage : VCE [V]
Gate Charge : QG [nC]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
8/11
Datasheet
RGS30TSX2DHR
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverce Recovery Time
vs. Forward Voltage
45
vs. Forward Current
500
40
35
30
25
20
15
400
300
Tj = 175ºC
200
10
100
0
Tj = 25ºC
VCC = 600V
diF/dt = 500A/μs
Inductive load
Tj = 175ºC
5
Tj = 25ºC
0
0
0.5
1
1.5
2
2.5
3
0
10
20
30
Forward Voltage : VF [V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
25
Fig.20 Typical Diode Reverse Recovery
Energy Losses vs. Forward Current
2
VCC = 600V
Tj = 175℃
Inductive load
1.5
20
Tj = 175ºC
15
RG = 10Ω
1
RG = 30Ω
10
Tj = 25ºC
RG = 50Ω
0.5
5
0
VCC = 600V
diF/dt = 500A/μs
Inductive load
0
0
10
20
30
0
10
20
30
Forward Current : IF [A]
Forward Current : IF [A]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
9/11
Datasheet
RGS30TSX2DHR
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
1
0.2
D = 0.5
0.1
0.1
0.01
Single Pulse
0.01
PDM
0.02
0.05
t1
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
C1
C2
C3
R1
400.8u 2.510m 12.89m 81.52m 263.0m 215.5m
R2
R3
0.001
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.22 Diode Transient Thermal Impedance
10
D = 0.5
0.2
1
0.1
0.1
PDM
t1
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
Single Pulse
0.01
0.02
C1
C2
C3
R1
403.9u 1.415m 13.77m 226.9m 482.3m 390.8m
R2
R3
0.05
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
10/11
Datasheet
RGS30TSX2DHR
●Inductive Load Switching Circuit and Waveform
D.U.T.
D.U.T.
Gate Drive Time
90%
VGE
VG
10%
Fig.23 Inductive Load Circuit
90%
10%
IC
tf
td(off)
td(on)
tr
trr , Qrr
IF
ton
toff
VCE
diF/dt
10%
VCE(sat)
Irr
Eon
Eoff
Fig.24 Diode Reverce Recovery Waveform
Fig.25 Inductive Load Waveform
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.06 - Rev.A
11/11
相关型号：
RGS30TSX2HR
RGS30TSX2HR适用于车载加热器，是短路耐量为10µs的产品。RGS系列实现了低导通损耗（Vce(sat.)），有助于应用的小型、高效化。符合AEC-Q101标准。
ROHM
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