RGS80TSX2 [ROHM]

RGS80TSX2适用于PFC、UPS、IH和功率调节器等，是短路耐量为10µs的产品。RGS系列实现了低导通损耗（Vce(sat.)），有助于应用的小型、高效化。;


型号：	RGS80TSX2
厂家：	ROHM
描述：	RGS80TSX2适用于PFC、UPS、IH和功率调节器等，是短路耐量为10µs的产品。RGS系列实现了低导通损耗（Vce(sat.)），有助于应用的小型、高效化。功率因数校正调节器
文件：	总10页 (文件大小：919K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGS80TSX2

Datasheet

1200V 40A Field Stop Trench IGBT

lOutline

TO-247N

V_CES

I_{C (100°C)}

V_{CE(sat) (Typ.)}

P_D

1200V

40A

1.7V

(1) (2)(3)

555W

lInner Circuit

(2)

(3)

lFeatures

(1) Gate

(2) Collector

(3) Emitter

1) Low Collector - Emitter Saturation Voltage

2) Short Circuit Withstand Time 10μs

(1)

3) Pb - free Lead Plating ; RoHS Compliant

lPackaging Specifications

Packaging

Tube

lApplication

Reel Size (mm)

PFC

Tape Width (mm)

Type

450

UPS

Basic Ordering Unit (pcs)

Packing Code

Marking

C11

Power Conditioner

RGS80TSX2

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

1200

±30

Unit

Gate - Emitter Voltage

T_C= 25°C

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Power Dissipation

120

555

277

I_CP

T_C= 25°C

P_D

T_j

T_C= 100°C

Operating Junction Temperature

Storage Temperature

-40 to +175

-55 to +175

°C

T_stg

*1 Pulse width limited by T_jmax.

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2020.06 - Rev.B

1/9

Datasheet

RGS80TSX2

lThermal Resistance

Values

Typ.

Parameter

Thermal Resistance IGBT Junction - Case

Symbol

R_θ(j-c)

Unit

Min.

Max.

0.27

C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

1200

V_CE= 1200V, V_GE= 0V,

I_CEST_j= 25℃

Collector Cut - off Current

μA

Tj = 175℃^*2

Gate - Emitter Leakage

Current

I_GESV_GE= ±30V, V_CE= 0V

±500

7.0

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 6.1mA

5.0

6.0

I_C= 40A, V_GE= 15V,

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.70

2.20

2.10

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2020.06 - Rev.B

2/9

Datasheet

RGS80TSX2

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

2820

161

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_iesV_CE= 30V,

C_oesV_GE= 0V,

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

C_res

Q_g

f = 1MHz

V_CE= 500V,

104

Q_geI_C= 40A,

Q_gcV_GE= 15V

t_d(on)

I_C= 40A, V_CC= 600V,

V_GE= 15V, R_G= 10Ω,

T_j= 25°C

Inductive Load

*E_oninclude diode

reverse recovery

t_r

t_d(off)

t_f

Turn - off Delay Time

Fall Time

199

227

3.00

3.10

E_on

E_off

t_d(on)

t_r

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

I_C= 40A, V_CC= 600V,

V_GE= 15V, R_G= 10Ω,

T_j= 175°C

Inductive Load

*E_oninclude diode

reverse recovery

t_d(off)

t_f

Turn - off Delay Time

Fall Time

258

371

3.80

4.50

E_on

E_off

Turn - on Switching Loss

Turn - off Switching Loss

I_C= 120A, V_CC= 1050V,

V_P= 1200V, V_GE= 15V,

R_G= 50Ω, T_j= 175°C

Reverse Bias

Safe Operating Area

RBSOA

t_sc

FULL SQUARE

_CC≤ 600V,

V_GE= 15V, T_j= 25°C

Short Circuit Withstand Time

μs

_CC≤ 600V,

V_GE= 15V, T_j= 150°C

t_sc

*2 Design assurance without measurement

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2020.06 - Rev.B

3/9

Datasheet

RGS80TSX2

lElectrical Characteristic Curves

Fig.1 Power Dissipation

vs. Case Temperature

Fig.2 Collector Current

vs. Case Temperature

100

600

500

400

300

200

100

T_j≤ 175ºC

V_GE≥ 15V

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

Fig.3 Forward Bias Safe Operating Area

1000

Fig.4 Reverse Bias Safe Operating Area

140

10μs

120

100

100μs

0.1

0.01

T_j≤ 175ºC

V_GE= 15V

T_C= 25ºC

Single Pulse

400

800

1200

1600

100

1000 10000

Collector To Emitter Voltage : V_CE[V]

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2020.06 - Rev.B

4/9

Datasheet

RGS80TSX2

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

V_GE= 15V

T_ｊ= 25ºC

T_ｊ= 175ºC

V_GE= 20V

V_GE= 12V

V_GE= 15V

V_GE= 12V

V_GE= 10V

V_GE= 8V

Collector To Emitter Voltage : V_CE[V]

Fig.8 Typical Collector To Emitter Saturation

Fig.7 Typical Transfer Characteristics

Voltage vs. Junction Temperature

I_C= 80A

V_GE= 15V

V_CE= 10V

I_C= 40A

I_C= 20A

T_j= 175ºC

T_j= 25ºC

10 12 14

25 50 75 100 125 150 175

Junction Temperature : T_j[°C ]

Gate To Emitter Voltage : V_GE[V]

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2020.06 - Rev.B

5/9

Datasheet

RGS80TSX2

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

Fig.10 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

T_j= 175ºC

T_j= 25ºC

I_C= 80A

I_C= 40A

I_C= 80A

I_C= 40A

I_C= 20A

Gate To Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time

vs. Collector Current

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

t_f

t_d(off)

100

t_d(on)

t_r

V_CC= 600V, I_C= 40A,

V_GE= 15V, T_j= 175ºC

Inductive load

V_CC= 600V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

10 20 30 40 50 60 70 80

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

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2020.06 - Rev.B

6/9

Datasheet

RGS80TSX2

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

vs. Collector Current

Fig.14 Typical Switching Energy Losses

vs. Gate Resistance

100

E_off

E_on

V_CC= 600V, I_C= 40A,

V_CC= 600V, V_GE= 15V,

V_GE= 15V, T_j= 175ºC

Inductive load

R_G= 10Ω, T_j= 175ºC

E_on

Inductive load

0.1

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

Fig.16 Typical Gate Charge

10000

1000

100

C_ies

V_CE= 300V

C_oes

V_CE= 500V

C_res

f = 1MHz

V_GE= 0V

T_j= 25ºC

I_C= 40A

T_j= 25ºC

0.01

0.1

100

120

Collector To Emitter Voltage : V_CE[V]

Gate Charge : Q_g[nQ]

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2020.06 - Rev.B

7/9

Datasheet

RGS80TSX2

lElectrical Characteristic Curves

Fig.17 IGBT Transient Thermal Impedance

D = 0.5

0.2

0.1

0.01

P_DM

Single Pulse

t₁

0.01

0.02

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

R2 R3

1.939m 3.166m 20.576m 43.129m 53.597m 173.284m

0.05

0.001

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

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2020.06 - Rev.B

8/9

Datasheet

RGS80TSX2

●Inductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

10%

V_GE

V_G

90%

10%

Fig.18 Inductive Load Circuit

t_f

I_C

t_d(off)

t_d(on)

t_r

t_on

t_off

V_CE

10%

V_CE(sat)

E_on

E_off

Fig.19 Inductive Load Waveform

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2020.06 - Rev.B

9/9

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1107

RGS80TSX2 [ROHM]

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