RLS139TE-11 [ROHM]

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon;
RLS139TE-11
型号: RLS139TE-11
厂家: ROHM    ROHM
描述:

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon

二极管
文件: 总2页 (文件大小:61K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RLS139  
Diodes  
Low-leakage Switching Diode  
RLS139  
!Applications  
!External dimensions (Units : mm)  
High speed switching  
CATHODE BAND  
0.4  
!Features  
1) High reliability.  
0.4  
2) Small surface areas mounting type. (LLDS (LL-34) )  
3) The typical reverse current is extrermely low of  
0.45nA.  
+0.2  
0.1  
3.4  
φ1.5Max.  
ROHM : LLDS  
JEDEC : LL-34  
Common : mini-MELF  
!Construction  
Silicon epitaxial planar  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Peak reverse voltage  
DC reverse voltage  
Peak forward current  
Mean rectifying current  
Surge current (1ms)  
Power dissipation  
Symbol  
Limits  
90  
Unit  
V
RM  
V
V
VR  
80  
I
FM  
400  
mA  
mA  
mA  
mW  
˚C  
I
O
130  
I
surge  
600  
P
300  
Junction temperature  
Storage temperature  
T
j
175  
T
stg  
65~+175  
˚C  
!Cathode band colors  
Type  
2nd Color Band  
Gray  
1st Color Band  
Gray  
RLS139  
!Electrical characteristics (Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
1.2  
20  
Unit  
V
Conditions  
V
F
-
-
-
-
1.0  
0.45  
2
IF=100mA  
Reverse current  
I
R
nA  
pF  
ns  
VR  
VR  
VR  
=30V  
=0.5V, f=1MHz  
=6V, I =10mA, R =50  
CT  
5
Capacitance between terminals  
Reverse recovery time  
t
rr  
30  
50  
F
L
RLS139  
Diodes  
!Electrical characteristics curves (Ta=25°C)  
200  
100  
50  
100  
6
5
4
3
2
1
0
50  
100˚C  
75˚C  
f=1MHz  
20  
10  
5
20  
10  
5
50˚C  
2
1
2
1
Ta=25˚C  
0.5  
0.5  
0.2  
0.1  
0.2  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
FORWARD VOLTAGE : V (V)  
0
5
10 15 20 25 30 35 40  
0
5
10  
15  
20  
25  
30  
F
REVERSE VOLTAGE : V  
R
(V)  
REVERSE VOLTAGE : V  
R
(V)  
Fig. 1 Forward characteristics  
Fig. 2 Reverse characteristics  
Fig. 3 Capacitance between  
terminals characteristics  
10  
8
100  
75  
50  
25  
0
V
Ta  
I
R
=
6V  
25˚C  
rr=1/10I  
PULSE  
=
Single pulse  
R
6
4
2
0
0.1m  
0
5
10  
15  
20  
25  
30  
1m  
10m  
100m  
1
10  
PULSE WIDTH : Tw (ms)  
FORWARD CURRENT : I  
F
(mA)  
Fig.5 Surge current characteristics  
Fig. 4 Reverse recovery time  
characteristics  
0.01µF  
D.U.T.  
5kΩ  
PULSE GENERATOR  
OUTPUT 50Ω  
SAMPLING  
OSCILLOSCOPE  
50Ω  
Fig. 6 Reverse recovery time (trr) measurement circuit  

相关型号:

RLS139TE-11A

0.13A, 90V, SILICON, SIGNAL DIODE
ROHM

RLS139TE-12

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon
ROHM

RLS139TE-12A

0.13A, 90V, SILICON, SIGNAL DIODE
ROHM

RLS139TE-15

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon
ROHM

RLS139TE-16

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon
ROHM

RLS139TE11A

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon
ROHM

RLS139TE11C

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon
ROHM

RLS139TE12A

Rectifier Diode, 1 Element, 0.13A, 40V V(RRM), Silicon
ROHM

RLS140

Rectifier Diode, 1 Element, 0.12A, 55V V(RRM), Silicon,
ROHM

RLS140TE-12

Rectifier Diode, 1 Element, 0.12A, 55V V(RRM), Silicon,
ROHM

RLS140TE-12A

0.12A, 55V, SILICON, SIGNAL DIODE
ROHM

RLS140TE-15

Rectifier Diode, 1 Element, 0.12A, 55V V(RRM), Silicon,
ROHM