RN141S [ROHM]
PIN diode; PIN二极管
| 型号： | RN141S |
| 厂家： | 
ROHM |
| 描述： | PIN diode |
| 文件： | 总3页 (文件大小：1023K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
PIN diode
RN141S
Applications
Dimensions(Unit : mm)
Land size figure(Unit : mm)
High frequency switching
0.8±0.05
0.12±0.05
0.8
Features
1) Ultra small mold type. (EMD2)
2) High frequency resistance is very small.
EMD2
Construction
0.3±0.05
Silicon epitaxial planer
Structure
0.6±0.1
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory
Taping specifications(Unit : mm)
0.2±0.05
2.0±0.05
4.0±0.1
φ1.55±0.05
0.2
φ0.5
4.0±0.1
2.0±0.05
0.90±0.05
Empty pocket
0.75±0.05
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
Symbol
VR
Unit
V
50
IF
100
150
mA
°C
Junction temperature
Tj
Storage temperature
-55 to +150
Tstg
°C
Electrical characteristics(Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
VF
IR
Forward voltage
-
-
-
-
-
-
-
-
1.0
0.1
0.8
2
IF=10mA
VR=50V
Reverse current
μA
pF
Capacitance between terminals
Forward resistance
Ct
Rf
VR=1.0V , f=1MHz
IF=3mA,f=100MHz
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.03 - Rev.C
RN141S
Data Sheet
Ta=150℃
Ta=125℃
Ta=75℃
100
10
1
10
1
10
1
f=1MH
Ta=150℃
Ta=125℃
Ta=75℃
0.1
Ta=25℃
Ta=25℃
0.01
0.001
0.0001
0.1
0.01
Ta=-25℃
Ta=-25℃
0.1
0
100 200 300 400 500 600 700 800 900 1000 1100
0
10
20
30
40
50
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
10
1
850
840
830
820
810
800
1
Ta=25℃
IF=10mA
n=30pcs
Ta=25℃
VR=0V
f=1MHz
f=10MHz
f=100MHz
AVE:826.1mV
0.1
0.1
0.1
1
10
1
10 100
FREQUENCY(MHz)
Ct-f CHARACTERISTICS
1000
FORWARD CURRENT:IF(mA)
rf-IF CHARACTERISTICS
VF DISPERSION MAP
1.5
1.4
1.3
1.2
1.1
1
2
1.8
1.6
1.4
1.2
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Ta=25℃
f=100MHz
IF=3mA
Ta=25℃
VR=50V
n=30pcs
Ta=25℃
f=1MHz
VR=1V
n=10pcs
n=10pcs
0.9
0.8
0.7
0.6
0.5
0.8
0.6
0.4
0.2
0
AVE:0.137nA
AVE:0.941Ω
AVE:0.663pF
FORWARD CURRENT:IF(mA)
rf DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
5
4
3
2
1
0
AVE:1.55kV
AVE:0.36kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.C
2/2
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
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