RP1E100RPTR [ROHM]

Power Field-Effect Transistor, 10A I(D), 30V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN;
RP1E100RPTR
型号: RP1E100RPTR
厂家: ROHM    ROHM
描述:

Power Field-Effect Transistor, 10A I(D), 30V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN

开关 脉冲 光电二极管 晶体管
文件: 总6页 (文件大小:193K)
中文:  中文翻译
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4V Drive Pch MOSFET  
RP1E100RP  
Structure  
Dimensions (Unit : mm)  
Silicon P-channel MOSFET  
MPT6  
(Single)  
(6)  
(1)  
(5)  
(2)  
(4)  
(3)  
Features  
1) Low On-resistance.  
2) High power package.  
3) 4V drive.  
Application  
Switching  
Packaging specifications  
Inner circuit  
(6)  
(5)  
(4)  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
1000  
RP1E100RP  
2  
(1) Source  
(2) Source  
(3) Gate  
(4) Drain  
(5) Drain  
(6) Drain  
1  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
(1)  
(2)  
(3)  
Limits  
30  
20  
Unit  
V
1 ESD PROTECTION DIODE  
2 BODY DIODE  
VDSS  
VGSS  
ID  
Gate-source voltage  
V
Continuous  
Pulsed  
10  
A
Drain current  
*1  
IDP  
40  
A
Continuous  
Pulsed  
IS  
1.6  
40  
2.0  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
A
Power dissipation  
PD  
W
Channel temperature  
Tch  
Tstg  
150  
C  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to +150 C  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
62.5  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
2010.07 - Rev.B  
1/5  
Data Sheet  
RP1E100RP  
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=20V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=30V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V(BR)DSS  
30  
-
-
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
1  
VGS (th)  
1.0  
-
2.5  
V
VDS=10V, ID=1mA  
ID=10A, VGS=10V  
ID=5A, VGS=4.5V  
ID=5A, VGS=4.0V  
ID=10A, VDS=10V  
-
-
9.0  
12.5  
14.0  
-
12.6  
Static drain-source on-state  
resistance  
*
RDS (on)  
m  
S
17.5  
-
19.6  
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
13  
-
-
-
-
-
-
-
-
-
-
-
-
Ciss  
Coss  
Crss  
3600  
450  
450  
25  
pF VDS=10V  
-
pF VGS=0V  
-
pF f=1MHz  
td(on)  
-
ns ID=5A, VDD 15V  
ns VGS=10V  
*
*
*
*
*
*
*
tr  
td(off)  
tf  
-
60  
Turn-off delay time  
Fall time  
-
150  
100  
39  
ns RL=3.0  
-
ns RG=10  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Qg  
Qgs  
Qgd  
-
nC ID=10A, VDD 15V  
nC VGS=5V RL=1.5  
nC RG=10  
-
8.5  
13.5  
-
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=10A, VGS=0V  
*Pulsed  
www.rohm.com  
2/5  
2010.07 - Rev.B  
©2010 ROHM Co., Ltd. All rights reserved.  
Data Sheet  
RP1E100RP  
Electrical characteristic curves  
20  
20  
18  
16  
14  
12  
10  
8
100  
10  
VGS= -10V  
VDS=-10V  
Pulsed  
VGS= -10V  
VGS= -4.5V  
VGS= -4.0V  
18  
VGS= -4.5V  
16  
14  
12  
10  
8
VGS= -4.0V  
Ta=125℃  
Ta=75℃  
Ta=25℃  
VGS= -3.2V  
1
Ta= -25℃  
VGS= -3.2V  
VGS= -2.8V  
VGS= -2.8V  
6
6
Ta=25℃  
Pulsed  
0.1  
0.01  
4
4
Ta=25℃  
Pulsed  
VGS=2.4V  
2
2
0
0
0
2
4
6
8
10  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.0  
1.5  
2.0  
2.5  
3.0  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.1 Typical output characteristics(Ⅰ)  
DRAIN-SOURCE VOLTAGE : VDS[V]  
GATE-SOURCE VOLTAGE : VGS[V]  
Fig.2 Typical output characteristics(Ⅱ)  
Fig.3 Typical Transfer Characteristics  
100  
10  
1
100  
10  
1
100  
VGS= -4.5V  
Pulsed  
VDS=-10V  
Pulsed  
Ta=25℃  
Pulsed  
10  
VGS= -4.0V  
VGS= -4.5V  
VGS= -10V  
Ta=125  
Ta=75℃  
Ta=25℃  
Ta= -25℃  
Ta=125℃  
Ta=75℃  
Ta=25℃  
Ta= -25℃  
1
0.1  
1
10  
100  
0.1  
1
10  
100  
0.1  
1
10  
100  
DRAIN-CURRENT : -ID[A]  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT : ID[A]  
Fig.4 Static Drain-Source On-State  
Fig.5 Static Drain-Source On-State  
Resistance vs. Drain Current()  
Fig.6 Static Drain-Source On-State  
Resistance vs. Drain Current()  
Resistance vs. Drain Current()  
100  
10  
1
100  
100  
10  
VGS=0V  
Pulsed  
VDS=-10V  
Pulsed  
VGS= -4.0V  
Pulsed  
Ta=125℃  
Ta=75℃  
Ta=25℃  
Ta= -25℃  
10  
1
Ta=125℃  
Ta=75℃  
Ta=25℃  
Ta= -25℃  
Ta=125℃  
Ta=75℃  
Ta=25℃  
Ta= -25℃  
0.1  
0
0.01  
1
0.1  
1
10  
100  
0.0 0.2 0.4 0.6 0.8 1.0 1.2  
0.1  
1
10  
100  
DRAIN-CURRENT : ID[A]  
DRAIN-CURRENT :ID[A]  
SOURCE-DRAIN VOLTAGE :VSD [V]  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain  
Fig.8 Forward Transfer Admittance  
vs. Drain Current  
Fig.9 Reverse Drain Current  
vs. Sourse-Drain Voltage  
www.rohm.com  
©2010 ROHM Co., Ltd. All rights reserved.  
3/5  
2010.07 - Rev.B  
Data Sheet  
RP1E100RP  
10000  
1000  
100  
10  
100  
10  
8
Ta=25℃  
VDD= -15V  
VGS= -10V  
RG=10  
Pulsed  
Ta=25℃  
VDD= -15V  
ID= -10A  
RG=10Ω  
Pulsed  
Ta=25℃  
Pulsed  
td(off)  
tf  
6
ID= -10.0A  
50  
4
ID= -5.0A  
2
tr  
td(on)  
1
1
0
0
0.01  
0.1  
10  
100  
0
5
10  
15  
0
10 20 30 40 50 60 70  
TOTAL GATE CHARGE : Qg [nC]  
Fig.12 Dynamic Input Characteristics  
GATE-SOURCE VOLTAGE :VGS[V]  
DRAIN-CURRENT : ID[A]  
Fig.11 Switching  
Characteristics  
Fig.10 Static Drain-Source On-State  
Resistance vs. Gate Source Voltage  
1000  
100  
10  
10000  
1000  
100  
Operation in this area is limited by  
RDS(ON)  
Ciss  
PW=100s  
PW=1ms  
PW = 10ms  
Crss  
Coss  
1
Ta = 25℃  
DC operation  
0.1  
0.01  
Ta=25℃  
f=1MHz  
VGS=0V  
Single Pulse  
Mountedon aCERAMIC board  
10  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
DRAIN-SOURCE VOLTAGE : VDS[V]  
DRAIN-SOURCE VOLTAGE : VDS[V]  
Fig.14 Maximum Safe Operating Aera  
Fig.13 Typical Capacitance  
vs. Drain-Source Voltage  
10  
1
0.1  
Ta = 25℃  
Single Pulse : 1Unit  
0.01  
0.001  
Rthch-a)(t= r(t×Rthch-a)  
Rthch-a= 62.5 /W  
<Mounted on a CERAMIC board>  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE WIDTH : Pw(s)  
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width  
www.rohm.com  
4/5  
2010.07 - Rev.B  
©2010 ROHM Co., Ltd. All rights reserved.  
Data Sheet  
RP1E100RP  
Measurement circuits  
Pulse Width  
V
GS  
ID  
V
V
GS  
10%  
50%  
V
DS  
50%  
90%  
R
L
D.U.T.  
10%  
90%  
10%  
90%  
RG  
V
DD  
DS td(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2 Switching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
V
G
VGS  
ID  
VDS  
Q
g
RL  
V
GS  
IG(Const.)  
D.U.T.  
Q
gs  
Qgd  
RG  
VDD  
Charge  
Fig.2-1 Gate Charge Measurement Circuit  
Fig.2-2 Gate Charge Waveform  
www.rohm.com  
5/5  
2010.07 - Rev.B  
©2010 ROHM Co., Ltd. All rights reserved.  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
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nication devices, electronic appliances and amusement devices).  
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Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
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