RP1E100RPTR [ROHM]

Power Field-Effect Transistor, 10A I(D), 30V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN;


型号：	RP1E100RPTR
厂家：	ROHM
描述：	Power Field-Effect Transistor, 10A I(D), 30V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN 开关脉冲光电二极管晶体管
文件：	总6页 (文件大小：193K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

4V Drive Pch MOSFET

RP1E100RP

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

MPT6

(Single)

(6)

(1)

(5)

(2)

(4)

(3)

Features

1) Low On-resistance.

2) High power package.

3) 4V drive.

 Application

Switching

 Packaging specifications

 Inner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

1000



RP1E100RP

∗2

(1) Source

(2) Source

(3) Gate

(4) Drain

(5) Drain

(6) Drain

∗1

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

(1)

(2)

(3)

Limits

30

20

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

10

Drain current

I_DP

40

Continuous

Pulsed

I_S

1.6

40

2.0

Source current

(Body Diode)

I_SP

Power dissipation

P_D

Channel temperature

Tch

Tstg

150

C

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150 C

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

62.5

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2010.07 - Rev.B

1/5

Data Sheet

RP1E100RP

ꢀ

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

A V_GS=20V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=30V, V_GS=0V

Conditions

Gate-source leakage

10

Drain-source breakdown voltage V_(BR)DSS

30

Zero gate voltage drain current

Gate threshold voltage

I_DSS

1

V_{GS (th)}

1.0

2.5

V_DS=10V, I_D=1mA

I_D=10A, V_GS=10V

I_D=5A, V_GS=4.5V

I_D=5A, V_GS=4.0V

I_D=10A, V_DS=10V

9.0

12.5

14.0

12.6

Static drain-source on-state

resistance

R_{DS (on)}

m

17.5

19.6

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

C_iss

C_oss

C_rss

3600

450

pF V_DS=10V

pF V_GS=0V

pF f=1MHz

t_d(on)

ns I_D=5A, V_DD15V

ns V_GS=10V

t_r

t_d(off)

t_f

Turn-off delay time

Fall time

150

100

ns R_L=3.0

ns R_G=10

Total gate charge

Gate-source charge

Gate-drain charge

Q_g

Q_gs

Q_gd

nC I_D=10A, V_DD15V

nC V_GS=5V R_L=1.5

nC R_G=10

8.5

13.5

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.2

Conditions

V_SD

I_s=10A, V_GS=0V

*Pulsed

www.rohm.com

2/5

2010.07 - Rev.B

Data Sheet

RP1E100RP

ꢀ

 Electrical characteristic curves

100

V_GS= -10V

V_DS=-10V

Pulsed

V_GS= -10V

V_GS= -4.5V

V_GS= -4.0V

V_GS= -4.5V

V_GS= -4.0V

Ta=125℃

Ta=75℃

Ta=25℃

V_GS= -3.2V

Ta= -25℃

V_GS= -3.2V

V_GS= -2.8V

Ta=25℃

Pulsed

0.1

0.01

Ta=25℃

Pulsed

V_GS=2.4V

0.0

0.2

0.4

0.6

0.8

1.0

1.5

2.0

2.5

3.0

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.1 Typical output characteristics(Ⅰ)

DRAIN-SOURCE VOLTAGE : V_DS[V]

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.2 Typical output characteristics(Ⅱ)

Fig.3 Typical Transfer Characteristics

100

V_GS= -4.5V

Pulsed

V_DS=-10V

Pulsed

Ta=25℃

Pulsed

V_GS= -4.0V

V_GS= -4.5V

V_GS= -10V

Ta=125℃

Ta=75℃

Ta=25℃

Ta= -25℃

Ta=125℃

Ta=75℃

Ta=25℃

Ta= -25℃

0.1

100

0.1

100

0.1

100

DRAIN-CURRENT : -I_D[A]

DRAIN-CURRENT : I_D[A]

Fig.4 Static Drain-Source On-State

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Resistance vs. Drain Current(Ⅲ)

100

V_GS=0V

Pulsed

V_DS=-10V

Pulsed

V_GS= -4.0V

Pulsed

Ta=125℃

Ta=75℃

Ta=25℃

Ta= -25℃

Ta=125℃

Ta=75℃

Ta=25℃

Ta= -25℃

Ta=125℃

Ta=75℃

Ta=25℃

Ta= -25℃

0.1

0.01

0.1

100

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

DRAIN-CURRENT : I_D[A]

DRAIN-CURRENT :I_D[A]

SOURCE-DRAIN VOLTAGE :V_SD[V]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain

Fig.8 Forward Transfer Admittance

vs. Drain Current

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

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3/5

2010.07 - Rev.B

Data Sheet

RP1E100RP

ꢀ

10000

1000

100

Ta=25℃

V_DD= -15V

V_GS= -10V

R_G=10Ω

Pulsed

Ta=25℃

V_DD= -15V

I_D= -10A

R_G=10Ω

Pulsed

Ta=25℃

Pulsed

td(off)

I_D= -10.0A

I_D= -5.0A

td(on)

0.01

0.1

100

10 20 30 40 50 60 70

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

GATE-SOURCE VOLTAGE :V_GS[V]

DRAIN-CURRENT : I_D[A]

Fig.11 Switching

Characteristics

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

1000

100

10000

1000

100

Operation in this area is limited by

R_DS(ON)

Ciss

PW=100s

PW=1ms

PW = 10ms

Crss

Coss

Ta = 25℃

DC operation

0.1

0.01

Ta=25℃

f=1MHz

V_GS=0V

Single Pulse

Mountedꢀon aꢀCERAMIC board

0.1

100

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.14 Maximum Safe Operating Aera

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

0.1

Ta = 25℃

Single Pulse : 1Unit

0.01

0.001

Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）

Rth（ch-a） = 62.5 ℃/W

0.001

0.01

0.1

100

1000

PULSE WIDTH : Pw(s)

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

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4/5

2010.07 - Rev.B

Data Sheet

RP1E100RP

ꢀ

 Measurement circuits

Pulse Width

10%

50%

90%

D.U.T.

10%

90%

10%

90%

^DStd(on)

td(off)

toff

Fig.1-2 Switching Waveforms

Fig.1-1 Switching Time Measurement Circuit

VGS

I^D

VDS

IG(Const.)

D.U.T.

Qgd

VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

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5/5

2010.07 - Rev.B

Notice

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

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The Products speciﬁed in this document are intended to be used with general-use electronic

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Please be sure to implement in your equipment using the Products safety measures to guard

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R1010

RP1E100RPTR [ROHM]

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