RP1E100RPTR [ROHM]
Power Field-Effect Transistor, 10A I(D), 30V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN;![RP1E100RPTR](http://pdffile.icpdf.com/pdf2/p00274/img/icpdf/RP1E100RPTR_1639419_icpdf.jpg)
型号: | RP1E100RPTR |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 10A I(D), 30V, 0.0126ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN 开关 脉冲 光电二极管 晶体管 |
文件: | 总6页 (文件大小:193K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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4V Drive Pch MOSFET
RP1E100RP
Structure
Dimensions (Unit : mm)
Silicon P-channel MOSFET
MPT6
(Single)
(6)
(1)
(5)
(2)
(4)
(3)
Features
1) Low On-resistance.
2) High power package.
3) 4V drive.
Application
Switching
Packaging specifications
Inner circuit
(6)
(5)
(4)
Package
Taping
TR
Type
Code
Basic ordering unit (pieces)
1000
RP1E100RP
∗2
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Drain-source voltage
(1)
(2)
(3)
Limits
30
20
Unit
V
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VDSS
VGSS
ID
Gate-source voltage
V
Continuous
Pulsed
10
A
Drain current
*1
IDP
40
A
Continuous
Pulsed
IS
1.6
40
2.0
A
Source current
(Body Diode)
*1
*2
ISP
A
Power dissipation
PD
W
Channel temperature
Tch
Tstg
150
C
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to +150 C
*2 Mounted on a ceramic board.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
62.5
Unit
Channel to Ambient
*Mounted on a ceramic board.
C / W
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©2010 ROHM Co., Ltd. All rights reserved.
2010.07 - Rev.B
1/5
Data Sheet
RP1E100RP
ꢀ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=30V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V(BR)DSS
30
-
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
1
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
ID=10A, VGS=10V
ID=5A, VGS=4.5V
ID=5A, VGS=4.0V
ID=10A, VDS=10V
-
-
9.0
12.5
14.0
-
12.6
Static drain-source on-state
resistance
*
RDS (on)
m
S
17.5
-
19.6
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
13
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
3600
450
450
25
pF VDS=10V
-
pF VGS=0V
-
pF f=1MHz
td(on)
-
ns ID=5A, VDD 15V
ns VGS=10V
*
*
*
*
*
*
*
tr
td(off)
tf
-
60
Turn-off delay time
Fall time
-
150
100
39
ns RL=3.0
-
ns RG=10
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
-
nC ID=10A, VDD 15V
nC VGS=5V RL=1.5
nC RG=10
-
8.5
13.5
-
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
VSD
V
Is=10A, VGS=0V
*Pulsed
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2/5
2010.07 - Rev.B
©2010 ROHM Co., Ltd. All rights reserved.
Data Sheet
RP1E100RP
ꢀ
Electrical characteristic curves
20
20
18
16
14
12
10
8
100
10
VGS= -10V
VDS=-10V
Pulsed
VGS= -10V
VGS= -4.5V
VGS= -4.0V
18
VGS= -4.5V
16
14
12
10
8
VGS= -4.0V
Ta=125℃
Ta=75℃
Ta=25℃
VGS= -3.2V
1
Ta= -25℃
VGS= -3.2V
VGS= -2.8V
VGS= -2.8V
6
6
Ta=25℃
Pulsed
0.1
0.01
4
4
Ta=25℃
Pulsed
VGS=2.4V
2
2
0
0
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.0
1.5
2.0
2.5
3.0
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.1 Typical output characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE : VDS[V]
GATE-SOURCE VOLTAGE : VGS[V]
Fig.2 Typical output characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
100
10
1
100
10
1
100
VGS= -4.5V
Pulsed
VDS=-10V
Pulsed
Ta=25℃
Pulsed
10
VGS= -4.0V
VGS= -4.5V
VGS= -10V
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
1
0.1
1
10
100
0.1
1
10
100
0.1
1
10
100
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Resistance vs. Drain Current(Ⅲ)
100
10
1
100
100
10
VGS=0V
Pulsed
VDS=-10V
Pulsed
VGS= -4.0V
Pulsed
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
10
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta= -25℃
0.1
0
0.01
1
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT :ID[A]
SOURCE-DRAIN VOLTAGE :VSD [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
3/5
2010.07 - Rev.B
Data Sheet
RP1E100RP
ꢀ
10000
1000
100
10
100
10
8
Ta=25℃
VDD= -15V
VGS= -10V
RG=10Ω
Pulsed
Ta=25℃
VDD= -15V
ID= -10A
RG=10Ω
Pulsed
Ta=25℃
Pulsed
td(off)
tf
6
ID= -10.0A
50
4
ID= -5.0A
2
tr
td(on)
1
1
0
0
0.01
0.1
10
100
0
5
10
15
0
10 20 30 40 50 60 70
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE :VGS[V]
DRAIN-CURRENT : ID[A]
Fig.11 Switching
Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
10
10000
1000
100
Operation in this area is limited by
RDS(ON)
Ciss
PW=100s
PW=1ms
PW = 10ms
Crss
Coss
1
Ta = 25℃
DC operation
0.1
0.01
Ta=25℃
f=1MHz
VGS=0V
Single Pulse
Mountedꢀon aꢀCERAMIC board
10
0.1
1
10
100
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Maximum Safe Operating Aera
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
10
1
0.1
Ta = 25℃
Single Pulse : 1Unit
0.01
0.001
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 ℃/W
<Mounted on a CERAMIC board>
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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4/5
2010.07 - Rev.B
©2010 ROHM Co., Ltd. All rights reserved.
Data Sheet
RP1E100RP
ꢀ
Measurement circuits
Pulse Width
V
GS
ID
V
V
GS
10%
50%
V
DS
50%
90%
R
L
D.U.T.
10%
90%
10%
90%
RG
V
DD
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
VGS
ID
VDS
Q
g
RL
V
GS
IG(Const.)
D.U.T.
Q
gs
Qgd
RG
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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5/5
2010.07 - Rev.B
©2010 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
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The Products are not designed or manufactured to be used with any equipment, device or
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may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
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