RQ3E180AJ [ROHM]
RQ3E180AJ是低导通电阻、小型表面安装封装的MOSFET。;
| 型号： | RQ3E180AJ |
| 厂家： | 
ROHM |
| 描述： | RQ3E180AJ是低导通电阻、小型表面安装封装的MOSFET。 |
| 文件： | 总12页 (文件大小：1256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQ3E180AJ
ꢀꢀNch 30V 18A Middle Power MOSFET
Datasheet
ꢀꢀ
llOutline
HSMT8
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VDSS
30V
4.5mΩ
±30A
2W
ꢀ
RDS(on)(Max.)
ꢀ
ID
ꢀ
PD
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llInner circuit
llFeatures
1) Low on - resistance.
2) Small Surface Mount Package.
3) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
330
12
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TB
Marking
E180AJ
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
30
Unit
V
VDSS
Drain - Source voltage
*4
Tc = 25°C
Ta = 25°C
ID
±30
A
Continuous drain current
ID
±18
A
*1
ID,pulse
VGSS
Pulsed drain current
±72
A
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
±12
V
*2
EAS
24.6
18
mJ
A
*2
IAS
*3
PD
2
W
W
℃
℃
Power dissipation
*4
PD
30
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
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1/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
Typ. Max.
*3
RthJA
Thermal resistance, junction - ambient
Thermal resistance, junction - case
-
-
62.5
4.17
-
-
℃/W
℃/W
*4
RthJC
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = 1mA
D
-
-
ΔV
I = 1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
18
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= 24V, V = 0V
1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±12V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
1.5
nA
V
GS
DS
= V , I = 11mA
0.5
DS
GS
D
I = 1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
-2.0
-
mV/℃
mΩ
S
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
= 4.5V, I = 18A
-
-
3.5
4.5
4.5
5.8
GS
GS
D
Static drain - source
on - state resistance
*5
RDS(on)
V
= 2.5V, I = 18A
D
Forward Transfer
Admittance
|Y |*5
V
DS
= 5V, I = 18A
24
-
-
fs
D
*1 Pw ≤ 10μs, Duty cycle ≤ 1%
*2 L ⋍ 100uH, V = 15V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
ch
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Tc=25℃
*5 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
4290
490
320
28
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= 15V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*5
td(on)
V
⋍ 15V,V = 4.5V
DD GS
tr*5
I = 9A
22
D
ns
*5
td(off)
R ⋍ 1.67Ω
Turn - off delay time
Fall time
150
160
L
tf*5
R = 10Ω
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
39
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*5
Qg
Total gate charge
-
-
-
-
-
-
V
⋍ 15V,
I = 18A,
DD
*5
Qgs
Gate - Source charge
Gate - Drain charge
10
D
V
GS
= 4.5V
*5
Qgd
10
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
A
Min.
-
Max.
1.67
Body diode continuous
forward current
*1
IS
-
T = 25℃
a
Body diode
pulse current
*2
ISP
-
-
-
-
72
A
V
*5
VSD
V
GS
= 0V, I = 1.67A
S
Forward voltage
1.2
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
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Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Transconductance vs. Drain Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
8/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/11
20150730 - Rev.002
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RQ3E180AJ
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT
Fig.3-2 AVALANCHE WAVEFORM
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llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
10/11
20150730 - Rev.002
RQ3E180AJ
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
11/11
20150730 - Rev.002
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