RQ5H020SP [ROHM]
小型表面安装封装的功率MOSFET RQ5H020SP适用于DC/DC转换器用途。;型号: | RQ5H020SP |
厂家: | ROHM |
描述: | 小型表面安装封装的功率MOSFET RQ5H020SP适用于DC/DC转换器用途。 转换器 |
文件: | 总13页 (文件大小:811K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RQ5H020SP
Datasheet
Pch -45V -2.0A Power MOSFET
Outline
VDSS
45V
190m
2.0A
1.0W
(3)
TSMT3
RDS(on) (Max.)
(1)
ID
PD
(2)
Features
1) Low on - resistance.
Inner circuit
(3)
2) Built-in G-S Protection Diode.
(1) Gate
(2) Source
(3) Drain
∗1
3) Small Surface Mount Package (TSMT3).
4) Pb-free lead plating ; RoHS compliant
∗2
1 BODY DIODE
2 ESD PROTECTION DIODE
(1)
(2)
Packaging specifications
Packaging
Taping
180
8
Reel size (mm)
Application
Tape width (mm)
Type
DC/DC converters
Basic ordering unit (pcs)
3,000
TL
Taping code
Marking
FB
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
45
Unit
V
Drain - Source voltage
Continuous drain current
Pulsed drain current
*1
A
ID
2.0
*2
A
ID,pulse
8.0
VGSS
Gate - Source voltage
V
20
*3
1.0
W
W
°C
°C
PD
Power dissipation
*4
0.54
PD
Tj
Junction temperature
150
Tstg
Range of storage temperature
55 to 150
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
1/11
Data Sheet
RQ5H020SP
Thermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
*3
-
-
-
-
125
232
°C/W
°C/W
RthJA
Thermal resistance, junction - ambient
*4
RthJA
Electrical characteristics(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
-
45
ΔV(BR)DSS
ΔTj
ID= 1mA
referenced to 25°C
Breakdown voltage
temperature coefficient
-
-
mV/°C
43
IDSS
IGSS
VDS = 45V, VGS = 0V
VGS = 20V, VDS = 0V
VDS = 10V, ID = 1mA
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
-
-
-
-
-
1
A
A
V
10
3.0
VGS (th)
1.0
ΔV(GS)th
ΔTj
ID= 1mA
referenced to 25°C
Gate threshold voltage
temperature coefficient
-
3.2
-
mV/°C
VGS= 10V, ID= 2.0A
VGS= 4.5V, ID= 2.0A
VGS= 4.0V, ID= 2.0A
VGS= 10V, ID= 2.0A, Tj=125°C
f = 1MHz, open drain
VDS= 10V, ID= 2.0A
-
130
180
200
200
21
190
-
260
Static drain - source
on - state resistance
*5
RDS(on)
m
-
-
280
-
-
-
RG
Gate input resistannce
Transconductance
-
*5
1.2
4.0
S
gfs
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (12×20×0.8mm)
*5 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
2/11
Data Sheet
RQ5H020SP
Electrical characteristics(Ta = 25°C)
Values
Typ.
500
80
Parameter
Symbol
Conditions
VGS = 0V
Unit
Min.
Max.
Ciss
Coss
Crss
Input capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 10V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
f = 1MHz
40
*5
V
DD ⋍ 25V, VGS = 10V
8
td(on)
*5
ID = 1.0A
RL = 25
RG = 10
10
tr
*5
Turn - off delay time
Fall time
35
td(off)
*5
10
tf
Gate Charge characteristics(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
nC
Min.
-
Max.
-
V
DD ⋍ 25V, ID= 2.0A
VGS = 4.5V
4.5
9.5
*5
Total gate charge
Qg
V
DD ⋍ 25V, ID= 2.0A
VGS = 10V
-
-
*5
Gate - Source charge
Gate - Drain charge
-
-
1.6
1.2
-
-
Qgs
V
DD ⋍ 25V, ID= 2.0A
*5
VGS = 10V
Qgd
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
0.8
1.2
Inverse diode continuous,
forward current
*1
Ta = 25°C
-
-
-
-
A
V
IS
*5
VGS = 0V, Is = 2.0A
Forward voltage
VSD
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
3/11
Data Sheet
RQ5H020SP
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 1ms
PW = 100s
10
1
DC Operation
PW = 10ms
0.1
0.01
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0
50
100
150
200
0.1
1
10
100
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maxmum Power
dissipation
10000
10
Ta=25ºC
Ta=25ºC
Single Pulse
1000
100
10
1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
0.1
bottom Single
0.01
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
0.001
0.0001
1
0.01
1
100
0.0001
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
4/11
Data Sheet
RQ5H020SP
Electrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
4
3
2
1
0
4
Ta=25ºC
Pulsed
VGS= 10.0V
VGS= 4.5V
VGS= 4.0V
VGS= 10.0V
3.5
VGS= 4.5V
Ta=25ºC
Pulsed
3
VGS= 4.0V
VGS= 3.0V
2.5
2
VGS= 3.0V
1.5
1
VGS= 2.5V
VGS= 2.5V
0.5
0
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
80
60
40
20
0
100
VGS = 0V
ID = 1mA
Pulsed
VDS= 10V
10
1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
0.1
0.01
0.001
-50
0
50
100
150
0
1
2
3
4
5
Junction Temperature : Tj [°C]
Gate - Source Voltage : -VGS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
5/11
Data Sheet
RQ5H020SP
Electrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
3
2
1
100
VDS= 10V
10
1
Ta= 25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
VDS = 10V
ID = 1mA
Pulsed
0
-50
0
50
100
150
0.01
0.1
1
10
100
Drain Current : -ID [A]
Junction Temperature : Tj [°C]
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
300
250
200
150
100
50
1.2
Ta=25ºC
ID = 1.0A
ID = 2.0A
1
0.8
0.6
0.4
0.2
0
0
0
5
10
15
-25
0
25
50
75 100 125 150
Gate - Source Voltage : -VGS [V]
Junction Temperature : Tj [ºC]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
6/11
Data Sheet
RQ5H020SP
Electrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
1000
250
200
150
100
50
Ta=25ºC
VGS= -4.0V
VGS= 4.5V
VGS= 10V
100
VGS = 10V
ID = 2.0A
Pulsed
10
0
0.01
0.1
1
10
100
-50 -25
0
25 50 75 100 125 150
Drain Current : -ID [A]
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
1000
1000
VGS= 10V
VGS= 4.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
100
100
10
10
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain Current : -ID [A]
Drain Current : -ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
7/11
Data Sheet
RQ5H020SP
Electrical characteristic curves
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
10000
1000
Ta=125ºC
VGS= 4.0V
Ta = 25ºC
f = 1MHz
VGS = 0V
Ta=75ºC
Ta=25ºC
Ta= 25ºC
1000
100
10
Ciss
100
Coss
Crss
1
10
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics
10
10000
1000
100
10
Ta=25ºC
VDD= 25V
ID= 2A
Ta=25ºC
VDD= 25V
VGS= 10V
RG=10
RG=10
tf
5
0
td(off)
td(on)
tr
1
0
5
10
0.01
0.1
1
10
Drain Current : -ID [A]
Total Gate Charge : Qg [nC]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
8/11
Data Sheet
RQ5H020SP
Electrical characteristic curves
Fig.21 Source Current
vs. Source Drain Voltage
10
VGS=0V
1
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= 25ºC
0.01
0.0
0.5
1.0
1.5
Source-Drain Voltage : -VSD [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
9/11
Data Sheet
RQ5H020SP
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
10/11
Data Sheet
RQ5H020SP
Dimensions (Unit : mm)
D
A
TSMT3
c
Q
e
b
x
S A
A3
e
S
b2
Patterm of terminal position areas
MILIMETERS
INCHES
DIM
MIN
-
0.00
0.75
MAX
1.00
0.10
0.95
MIN
-
0
0.03
MAX
0.039
0.004
0.037
A
A1
A2
A3
b
c
D
E
e
0.25
0.95
0.01
0.04
0.35
0.10
2.80
1.50
0.50
0.26
3.00
1.80
0.014
0.004
0.11
0.02
0.01
0.118
0.071
0.059
HE
L1
Lp
Q
2.60
0.30
0.40
0.05
-
3.00
0.60
0.70
0.25
0.20
0.102
0.012
0.016
0.002
-
0.118
0.024
0.028
0.01
x
0.008
MILIMETERS
MAX
2.10
INCHES
0.08
DIM
MIN
-
MIN
MAX
e1
b2
l1
0.70
0.90
-
-
0.028
0.035
Dimension in mm/inches
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© 2015 ROHM Co., Ltd. All rights reserved.
2016.03 - Rev.B
11/11
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Precaution on using ROHM Products
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damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
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CLASSⅢ
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[h] Use of the Products in places subject to dew condensation
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6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
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Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
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characteristics of the Products and external components, including transient characteristics, as well as static
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This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
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isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
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1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
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3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
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