RQ6E055BN [ROHM]
RQ6E055BN是内置栅极保护二极管的功率MOSFET。;
| 型号： | RQ6E055BN |
| 厂家： | 
ROHM |
| 描述： | RQ6E055BN是内置栅极保护二极管的功率MOSFET。 栅 二极管 栅极 |
| 文件： | 总12页 (文件大小：1289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQ6E055BN
ꢀꢀNch 30V 5.5A Power MOSFET
Datasheet
ꢀꢀ
llOutline
TSMT6
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VDSS
30V
ꢀ
RDS(on)(Max.)
25mΩ
±5.5A
1.25W
ꢀ
ꢀ
ID
ꢀ
ꢀ
PD
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llInner circuit
llFeatures
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
HH
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
30
Unit
V
VDSS
Drain - Source voltage
Continuous drain current
Pulsed drain current
*1
ID
±5.5
A
*2
ID,pulse
±18
A
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
±20
V
*3
EAS
2.2
mJ
A
*3
IAS
5.5
*4
PD
Power dissipation
1.25
W
℃
℃
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
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1/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
-
Typ. Max.
*4
RthJA
Thermal resistance, junction - ambient
100
-
℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = 1mA
D
-
-
ΔV
I = 1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
21
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= 30V, V = 0V
1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±20V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
2.5
nA
V
GS
DS
= V , I = 1mA
1.0
DS
GS
D
I = 1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
-3
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
GS
V
GS
V
DS
= 10V, I = 5.5A
-
-
19
30
-
25
39
-
D
Static drain - source
on - state resistance
*5
RDS(on)
mΩ
S
= 4.5V, I = 5.5A
D
*5
gfs
= 5V, I = 5.5A
Transconductance
3.4
D
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 100μH, V = 15V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
ch
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
2/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
355
58
47
7
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= 15V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*5
V
DD
⋍ 15V,V = 10V
GS
td(on)
tr*5
I = 2.75A
12
16
7
D
ns
*5
td(off)
R = 5.5Ω
Turn - off delay time
Fall time
L
tf*5
R = 10Ω
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
8.6
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
V
= 10V
= 4.5V
-
-
-
-
-
-
-
-
GS
GS
*5
Qg
Total gate charge
4.4
V
⋍ 15V
I = 5.5A
DD
*5
V
Qgs
Gate - Source charge
Gate - Drain charge
1.7
D
*5
Qgd
1.6
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
1.0
Body diode continuous
forward current
*1
IS
-
T = 25℃
A
V
a
Body diode
pulse current
*2
ISP
-
-
-
-
18
*5
VSD
Forward voltage
V
GS
= 0V, I = 1.0A
1.2
S
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
3/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
4/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
5/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Transconductance vs. Drain Current
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
6/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
7/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
8/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
9/11
20141001 - Rev.001
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RQ6E055BN
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 AVALANCHE MEASUREMENT CIRCUIT
Fig.3-2 AVALANCHE WAVEFORM
llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
10/11
20141001 - Rev.001
RQ6E055BN
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Datasheet
llDimensions
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
11/11
20141001 - Rev.001
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