RRE04EA4D [ROHM]
Rectifier Diode; 整流器器二极管
| 型号： | RRE04EA4D |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode |
| 文件： | 总5页 (文件大小：1127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Rectifier Diode
RRE04EA4D
●Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
General Rectification
2.9±0.1
＋0.1
ꢀ－0.05
0.16±0.1
0.06
Each read has same dimensions
0.4
(5)
(4)
●Features
1)Small mold type. (TSMD5)
2)High Reliability.
0～0.1
0.33±0.03
(1)
(2)
0.95
(3)
TSMD5
0.7±0.1
0.85±0.1
1.0Max
0.95
1.9±0.2
●Construction
Structure
Silicon epitaxial planer
ROHM : TSMD5
dot (year week factory)
Taping dimensions (Unit : mm)
φ1.55±0.05
2.0±0.05
4.0±0.1
0.3±0.1
φ1.1±0.1
4.0±0.1
3.2±0.08
1.1±0.08
Absolute maximum ratings (Ta=25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Conditions
D≤0.5
Symbol
VRM
Limits
400
Unit
V
VR
Direct voltage
400
V
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
Average rectified forward current (*1)
Forward current surge peak
Io
0.4
A
A
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
IFSM
2
Junction temperature
Storage temperature
(*1) 1/2 x Io at per diode
Tj
150
°C
°C
-
+
Tstg
55 to 150
Electrical characteristics (Tj=25°C)
Parameter
Forward voltage
Conditions
IF=0.2A
Symbol
Min.
－
Typ.
0.95
0.01
Max.
1.1
1
Unit
V
VF
IR
VR=400V
Reverse current
* per diode
－
μA
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.09 - Rev.A
1/4
Data Sheet
RRE04EA4D
ꢀ
1000
100
10
1
Tj=150°C
Tj=125°C
Tj=150°C
0.1
Tj=75°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=75°C
0.01
1
per diode
per diode
300
0.1
0.001
0
100
200
400
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
960
955
950
945
940
935
930
925
920
10
f=1MHz
Tj=25°C
IF=0.2A
n=20pcs
per diode
1
AVE:941mV
per diode
0.1
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
5
4.5
4
100
10
1
Tj=25°C
f=1MHz
VR=0V
n=10pcs
per diode
Tj=25°C
VR=400V
n=20pcs
per diode
3.5
3
2.5
2
AVE:3.39pF
AVE:4.6nA
1.5
1
0.5
0
0.1
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
Data Sheet
RRE04EA4D
ꢀ
10
9
8
7
6
5
4
3
2
1
0
100
10
1
per diode
IFSM
8.3ms 8.3ms
1cyc
AVE:7.40A
1cyc
IFSM
8.3ms
per diode
0.1
1
10
100
IFSM DISPERSION MAP
NUMBER OF CYCLES
I
FSM-CYCLE CHARACTERISTICS
100
10
1
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
per diode
IFSM
t
AVE:6.84kV
AVE:4.58kV
per diode
0.1
1
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
10
100
TIME:t(ms)
ESD DISPERSION MAP
IFSM-t CHARACTERISTICS
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1000
100
10
D.C.
Rth(j-a)
Rth(j-c)
D=0.8
D=0.5
half sin wave
On glass-epoxy substrade
1
0.001
0.01
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.09 - Rev.A
Data Sheet
RRE04EA4D
ꢀ
Io
0A
0V
VR
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
t
D=t/T
VR=200V
Io
0A
0V
0.7
Tj=150°C
T
D.C.
D.C.
VR
t
0.6
D=0.8
D=t/T
VR=200V
T
D=0.8
0.5
Tj=150°C
On glass-epoxy substrate
D=0.5
D=0.5
0.4
half sin wave
half sin wave
0.3
0.2
0.1
0
0
30
60
90
120
150
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
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4/4
2011.09 - Rev.A
Notice
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