RS1E180BN [ROHM]
RS1E180BN是小型大功率封装（HSOP8）的低导通电阻MOSFET，适合开关用途。;
| 型号： | RS1E180BN |
| 厂家： | 
ROHM |
| 描述： | RS1E180BN是小型大功率封装（HSOP8）的低导通电阻MOSFET，适合开关用途。 开关 |
| 文件： | 总13页 (文件大小：1571K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
RS1E200BN
RS1E200BN是适用于小型大功率封装的开关用途的中功率MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E200GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E220AT
RS1E220AT is a power MOSFET, suitable for swithing applications.Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E240BN
RS1E240BN是低导通电阻、小型大功率封装的MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E240BNTB
Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E240GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E260AT
RS1E260AT是非常适用于开关应用的低导通电阻MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E280BN
RS1E280BN是低导通电阻、小型大功率封装的MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E280GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E281BN
RS1E281BN是具有低导通电阻、小型大功率封装的MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E300GNTB
Power Field-Effect Transistor, 30A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E301GN
RS1E301GN是采用大功率封装(HSOP8)、且具有低导通电阻特点的功率MOSFET。适合开关应用。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E321GN
RS1E321GN是采用大功率封装(HSOP8)、且具有低导通电阻特点的功率MOSFET。适合开关应用。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E350BN
RS1E350BN是低导通电阻、小型大功率封装的MOSFET。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1E350GN
场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”，为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容，可满足多样的市场需求。Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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ROHM
RS1FLD
Surface-Mount Fast Switching RectifiersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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VISHAY
RS1FLG
Surface-Mount Fast Switching RectifiersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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VISHAY
RS1FLJ
Surface-Mount Fast Switching RectifiersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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VISHAY
RS1FLK
Surface-Mount Fast Switching RectifiersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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VISHAY
RS1FLM
Surface-Mount Fast Switching RectifiersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 182
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VISHAY
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