RSD080N06TL [ROHM]

Power Field-Effect Transistor, 8A I(D), 60V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN;


型号：	RSD080N06TL
厂家：	ROHM
描述：	Power Field-Effect Transistor, 8A I(D), 60V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN 开关脉冲晶体管
文件：	总7页 (文件大小：578K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Data Sheet

4V Drive Nch MOSFET

RSD080N06

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

CPT3

(SC-63)

<SOT-428>

6.5

5.1

2.3

0.5

Features

1) Low on-resistance.

2) 4V drive.

0.75

0.9 2.3

3) High power package(CPT3).

0.65

2.3

(1)

(2)

(3)

0.5

1.0

 Application

Switching

 Packaging specifications

 Inner circuit

∗1

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500



∗2

RSD080N06

(1)

(2)

(3)

(1) Gate

(2) Drain

(3) Source

1 ESD PROTECTION DIODE

2 BODY DIODE

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

Limits

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

8

Drain current

I_DP

16

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

Power dissipation

P_D

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

*2 T_C=25C

55 to 150

 Thermal resistance

Parameter

Symbol

Limits

8.33

Unit

Channel to Case

* T_C=25C

Rth (ch-c)

C / W

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2011.08 - Rev.A

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Data Sheet

RSD080N06

ꢀ

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

A V_GS=20V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=60V, V_GS=0V

Conditions

Gate-source leakage

10

Drain-source breakdown voltage V_(BR)DSS

Zero gate voltage drain current

Gate threshold voltage

I_DSS

V_{GS (th)}

1.0

2.5

V_DS=10V, I_D=1mA

I_D=8A, V_GS=10V

I_D=8A, V_GS=4.5V

I_D=8A, V_GS=4.0V

V_DS=10V, I_D=8A

Static drain-source on-state

resistance

R_{DS (on)}

m

109

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

C_iss

4.8

380

pF V_DS=10V

pF V_GS=0V

C_oss

C_rss

pF f=1MHz

ns V_DD30V, I_D=4A

ns V_GS=10V

ns R_L=7.5

ns R_G=10

nC V_DD30V, I_D=8A

nC V_GS=10V

t_d(on)

t_r

9.4

1.8

2.3

Turn-off delay time

Fall time

t_d(off)

t_f

Total gate charge

Gate-source charge

Gate-drain charge

Q_g

Q_gs

Q_gd

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.5

Conditions

V_SD

I_s=8A, V_GS=0V

*Pulsed

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2011.08 - Rev.A

Data Sheet

RSD080N06

ꢀ

Electrical characteristic curves (Ta=25C)

Fig.1 Typical Output Characteristics (Ⅰ)

Fig.2 Typical Output Characteristics (Ⅱ)

T_a=25°C

pulsed

V_GS=10.0V

V_GS=4.5V

V_GS=4.0V

V_GS=10.0V

V_GS=4.5V

V_GS=4.0V

V_GS=3.0V

0.2

0.4

0.6

0.8

Drain-Source Voltage : V_DS[V]

Fig.3 Static Drain-Source On-State Resistance vs. Drain Current

1000

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current

1000

V_GS=10V

pulsed

T_a=25°C

pulsed

T_a=125°C

T_a=75°C

T_a=25°C

T_a=-25°C

V_GS=4.0V

V_GS=4.5V

V_GS=10V

100

0.01

0.1

100

0.01

0.1

100

Drain Current : I_D[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

V_GS=4.5V

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current

1000

100

V_GS=4V

pulsed

T_a=125°C

T_a=75°C

T_a=25°C

T_a=-25°C

T_a=125°C

pulsed

T_a=75°C

T_a=25°C

T_a=-25°C

100

0.01

0.1

100

0.01

0.1

100

Drain Current : I_D[A]

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2011.08 - Rev.A

Data Sheet

RSD080N06

ꢀ

Fig.8 Typical Transfer Characteristics

Fig.7 Forward Transfer Admittance vs. Drain Current

100

V_DS=10V

pulsed

V_DS=10V

pulsed

T_a=125°C

T_a=75°C

T_a=25°C

T_a=-25°C

T_a=125°C

T_a=75°C

T_a=25°C

T_a=-25°C

0.1

0.01

0.001

0.01

0.1

100

2.0

0.0

1.0

2.0

3.0

4.0

5.0

Drain Current : I_D[A]

Gate-Source Voltage : V_GS[V]

Fig.9 Source Current vs. Source-Drain Voltage

Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage

100

300

V_GS=0V

pulsed

T_a=25°C

pulsed

250

I_D=8.0A

T_a=125°C

T_a=75°C

T_a=25°C

T_a=-25°C

200

I_D=4.0A

150

100

0.1

0.01

0.0

0.5

1.0

1.5

Source-Drain Voltage : V_SD[V]

Gate-Source Voltage : V_GS[V]

Fig.12 Dynamic Input Characteristics

Fig.11 Switching Characteristics

10000

1000

100

_DD≒30V

T_a=25°C

V_DD=30V

I_D=8A

V_GS=10V

R_G=10Ω

T_a=25°C

Pulsed

t_f

t_d(off)

t_r

t_d(on)

0.01

0.1

Drain Current : I_D[A]

Total Gate Charge : Q_g[nC]

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2011.08 - Rev.A

Data Sheet

RSD080N06

ꢀ

Fig.13 Typical Capacitance vs. Drain-Source Voltage

Fig.14 Maximum Safe Operating Area

10000

1000

100

Operation in this area

is limited by R_DS(on)

(V_GS= 10V)

T_a=25°C

f=1MHz

V_GS=0V

P_W= 100μs

C_iss

P_W= 1ms

C_rss

P_W= 10ms

0.1

0.01

C_oss

T_a=25°C

Single Pulse

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

0.01

0.1

100

0.1

100

Drain-Source Voltage : V_DS[ V ]

Drain-Source Voltage : V_DS[V]

Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width

T_a=25°C

Single Pulse

0.1

0.01

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

Rth_(ch-a)=47.4°C/W

Rth_(ch-a)(t)=r(t)×Rth_(ch-a)

0.001

0.0001

0.001

0.01

0.1

100

1000

Pulse width : Pw (s)

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5/6

2011.08 - Rev.A

Data Sheet

RSD080N06

ꢀ

 Measurement circuits

Pulse width

VDS

90%

50%

10%

50%

10%

90%

D.U.T.

VDD

90%

d(on)

td(off)

toff

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2 Switching Waveforms

VGS

VDS

VGS

D.U.T.

G(Const.)

Qgd

VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

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2011.08 - Rev.A

Notice

N o t e s

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1120A

RSD080N06TL [ROHM]

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