RSJ400N06FRA [ROHM]
车载MOSFET与通用品共用数据表。下订单时,请注意下列型号命名方式,编写为车载型号。;型号: | RSJ400N06FRA |
厂家: | ROHM |
描述: | 车载MOSFET与通用品共用数据表。下订单时,请注意下列型号命名方式,编写为车载型号。 |
文件: | 总8页 (文件大小:1301K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
10V Drive Nch MOSFET
RSJ400N06FRA
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1.24
1) Low on-resistance.
2) High current
0.4
2.7
2.54
0.78
3) High power Package
5.08
(1) (2) (3)
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
TL
∗1
Type
Code
Basic ordering unit (pieces)
1000
∗2
RSJ400N06FRA
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
1 ESD PROTECTION DIODE
2 BODY DIODE
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Drain-source voltage
Limits
Unit
V
VDSS
VGSS
ID
60
20
Gate-source voltage
V
Continuous
Pulsed
40
A
Drain current
*1
IDP
80
A
Continuous
Pulsed
IS
40
A
Source current
(Body Diode)
*1
*2
ISP
80
A
Power dissipation
PD
50
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
55to150
*1 Pw10s, Duty cycle1%
*2 T =25C
c
Thermal resistance
Parameter
Symbol
Rth (ch-c)
Limits
2.5
Unit
*
Channel to Case
C / W
* T =25C
c
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2011.09 - Rev.A
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1/5
Data Sheet
ꢀ
RSJ400N06FRA
Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=60V, VGS=0V
Conditions
Gate-source leakage
IGSS
-
60
-
-
-
-
-
10
-
Drain-source breakdown voltage V(BR)DSS
V
Zero gate voltage drain current
IDSS
1
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
1.0
3.0
V
VDS=10V, ID=1mA
ID=40A, VGS=10V
*
RDS (on)
-
11
16
m
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
Ciss
Coss
Crss
td(on)
tr
14
-
-
2400
490
250
20
-
-
-
-
-
-
-
-
-
-
-
S
ID=20A, VDS=10V
pF VDS=10V
pF VGS=0V
-
-
pF f=1MHz
*
*
*
*
*
*
*
-
ns ID=20A, VDD 30V
ns VGS=10V
ns RL=1.5
ns RG=10
nC VDD 30V
nC ID=40A,
-
60
Turn-off delay time
Fall time
td(off)
tf
-
90
-
140
52
Total gate charge
Gate-source charge
Gate-drain charge
Qg
-
Qgs
Qgd
-
8
-
15
nC VGS=10V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol Min.
Typ.
-
Max.
1.2
Unit
V
Conditions
*
VSD
-
Is=40A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.09 - Rev.A
2/5
Data Sheet
RSJ400N06FRA
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
100
Fig.1 Static Drain-Source On-State Resistance vs. Drain Current
100
10
1
VGS=10V
pulsed
Ta=25°C
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.01
0.01
0.1
1
10
100
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
100
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
100
VGS=4.5V
pulsed
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
10
1
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
Fig.5 Forward Transfer Admittance vs. Drain Current
Fig.6 Typical Transfer Characteristics
100
10
100
10
VDS=10V
pulsed
VDS=10V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.01
0.001
0.0001
0.00001
0.1
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.01
0.1
1
10
100
Gate-Source Voltage : VGS [V]
Drain Current : ID [A]
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3/5
2011.09 - Rev.A
Data Sheet
RSJ400N06FRA
ꢀ
Fig.7 Source Current vs. Source-Drain Voltage
Fig.8 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
10
50
40
30
20
10
0
VGS=0V
pulsed
Ta=25°C
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
ID=20A
ID=40A
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
12
14
16
18
20
0.0
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
Gate-Source Voltage : VGS [V]
Fig.9 Switching Characteristics
Fig.10 Dynamic Input Characteristics
10000
1000
100
10
10
V
DD≒30V
Ta=25°C
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
VDD=30V
ID=40A
Pulsed
8
6
4
2
0
tf
td(off)
td(on)
tr
1
0.01
0.1
1
10
100
0
5
10 15 20 25 30 35 40 45 50 55 60
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
Fig.11 Typical Capacitance vs. Drain-Source Voltage
Fig.12 Normalized Transient Thermal Resistance v.s. Pulse Width
10
100000
10000
1000
100
Tc=25°C
Single Pulse
Ta=25°C
f=1MHz
VGS=0V
Ciss
1
Coss
0.1
Crss
0.01
10
Rth(ch-c)=2.5°C/W
Rth(ch-c)(t)=r(t)×Rth(ch-c)
1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse width : Pw (s)
Drain-Source Voltage : VDS [V]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.09 - Rev.A
Data Sheet
ꢀ
RSJ400N06FRA
Measurement circuits
Pulse width
90%
V
GS
ID
VDS
50%
10%
50%
V
GS
DS
R
L
V
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.09 - Rev.A
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