RSL020P03FRA [ROHM]
车载 MOSFET与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。;
| 型号： | RSL020P03FRA |
| 厂家： | 
ROHM |
| 描述： | 车载 MOSFET与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。 |
| 文件： | 总4页 (文件大小：1016K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RSL020P03FRA
Transistors
AEC-Q101 Qualified
4V Drive Pch MOSFET
RSL020P03FRA
zStructure
zDimensions (Unit : mm)
Silicon P-channel MOSFET
TUMT6
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Abbreviated symbol : SL
Switching
zPackaging specifications
zInner circuit
(6)
(5)
(4)
Package
Code
Taping
Type
TR
Quantity (pcs)
3000
∗2
RSL020P03FRA
∗1
(1) Drain
(2) Drain
(3) Gate
(1)
(2)
(3)
(4) Source
(5) Drain
(6) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
−30
20
V
Continuous
2
A
Drain current
Pulsed
∗1
IDP
IS
8
A
Source current
(Body diode)
Continuous
−0.8
−8
1
A
∗1
∗2
Pulsed
ISP
A
Total power dissipation
Channel temperature
PD
W
°C
°C
Tch
Tstg
150
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
−55 to +150
zThermal resistance
Parameter
Symbol
Limits
125
Unit
∗
Channel to ambient
∗ Mounted on a ceramic board
Rth(ch-a)
°C/W
20190527-Rev.C 1/4
RSL020P03FRA
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
Gate-source leakage
IGSS
−
−
−
−
10
−
µA VGS
=
20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30
Zero gate voltage drain current
V
ID= −1mA, VGS=0V
µA VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
IDSS
−
−1
−2.5
120
190
210
−
−
−
−
−
−
−
−
−
−
−
Gate threshold voltage
VGS (th) −1.0
−
V
−
−
−
80
125
140
−
mΩ ID= −2A, VGS= −10V
mΩ ID=−1A, VGS= −4.5V
mΩ ID= −1A, VGS= −4.0V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
1.4
S
VDS= −10V, ID= −1A
VDS= −10V
VGS=0V
−
−
−
−
−
−
−
−
350
80
50
11
11
35
11
3.9
1.3
1.1
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
f=1MHz
∗
∗
∗
∗
V
DD −15
V
I
D
= −1A
GS= −10V
=15Ω
=10Ω
t
r
V
Turn-off delay time
Fall time
td (off)
tf
R
L
R
G
Total gate charge
Gate-source charge
Qg
nC VDD −15V VGS= −5V
ID= −2A
Qgs
Qgd
−
−
nC
R
L=7.5Ω
RG =10Ω
Gate-drain charge
∗Pulsed
nC
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
IS= −0.8A, VGS=0V
Unit
V
Forward voltage
V
SD
−
−
−1.2
20190527-Rev.C 2/4
RSL020P03FRA
Transistors
zElectrical characteristics curves
1000
Ta=25°C
1000
8
7
6
5
Ta=25°C
VDD= −15V
VSG= −10V
RG=10Ω
Pulsed
Ta=25°C
f=1MHz
V
DD= −15V
V
GS=0V
I
D
= −2A
R
G=10Ω
Ciss
Pulsed
tf
100
10
1
100
td (off)
4
3
Coss
Crss
td (on)
tr
2
1
0
10
0.01
0.1
1
10
100
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
500
10
10
1
Ta=25°C
V
GS= 0V
V
DS= −10V
Pulsed
Pulsed
Pulsed
Ta=125°C
75°C
400
300
200
25°C
−25°C
1
Ta=125°C
75°C
25°C
−25°C
I
D
= −2A
0.1
0.01
0.1
I
D
= −1A
100
0
0.001
0.01
0.0
0
2
4
6
8
10
12 14 16
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5
1.0
1.5
2.0
GATE-SOURCE VOLTAGE : −VGS (V)
GATE-SOURCE VOLTAGE : −VGS (V)
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Reverse Drain Current vs. Source-Drain Voltage
Fig.4 Typical Transfer Characteristics
1000
1000
1000
V
GS= −10V
V
GS= −4.5V
V
GS= −4V
Pulsed
Pulsed
Pulsed
Ta=125°C
75°C
25°C
−25°C
Ta=125°C
75°C
25°C
−25°C
Ta=125°C
75°C
25°C
−25°C
100
100
100
10
0.1
10
0.1
10
0.1
1
10
1
10
1
10
DRAIN CURRENT : −I
D
(A)
DRAIN CURRENT : −I
D
(A)
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
Fig.8 Static Drain-Source
Fig.9 Static Drain-Source
On-State Resistance vs.
On-State Resistance vs.
On-State Resistance vs.
Drain current ( Ι )
Drain current ( ΙΙ )
Drain current ( ΙΙΙ )
20190527-Rev.C 3/4
RSL020P03FRA
Transistors
1000
Ta=25°C
Pulsed
V
GS= −4.0V
−4.5V
−10V
100
10
0.01
0.1
1
10
DRAIN CURRENT : −I
D
(A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι
)
4/4
20190527-Rev.C
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