RSX201L-30

更新时间:2025-07-06 01:49:41
品牌:ROHM
描述:Shottky barrier diode

RSX201L-30 概述

Shottky barrier diode 肖特基势垒二极管 整流二极管

RSX201L-30 规格参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended包装说明:PMDS, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.72其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.44 VJESD-30 代码:R-PDSO-C2
JESD-609代码:e1最大非重复峰值正向电流:60 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:30 V最大反向恢复时间:0.018 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

RSX201L-30 数据手册

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RSX201L-30  
Diodes  
Shottky barrier diode  
RSX201L-30  
zExternal dimensions (Unit : mm)  
zApplication  
High efficient shottky barrier diode.  
Rectifier for power supply units.  
Battery protection against reversal current  
CATHODE MARK  
1.5±0.2  
0.02  
0.1  
0.1±  
5 4  
zFeatures  
1
2
1) Small mold type power diode (PMDS (4526) )  
2) High reliability  
2.6±  
0.2  
2.0±0.2  
(ESD resistance typ=22kV (machine model) )  
3) Low VF / Low IR  
ROHM : PMDS  
EIAJ : −  
1 2 Manufacturing date EX2003.9 3.9  
(VF=0.39V at 2A / IR=50µA at 30V)  
JEDEC :  
zStructure  
Silicon Epitaxial Planer  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
Symbol  
Limits  
Unit  
V
VRM  
30  
V
R
30  
V
Average rectified forward current  
Forward peak surge current (60Hz / 1cyc.)  
Junction temperature  
I
O
2
60  
A
I
FSM  
A
Tj  
150  
°C  
°C  
Storage temperature  
Tstg  
40 to 150  
zElectrical characteristics (Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
0.39  
50  
Max.  
0.44  
150  
Unit  
V
Conditions  
V
F
IF=2A  
Reverse current  
I
R
µA  
pF  
kV  
V
V
R
=30V  
=10V, f=1MHz  
Capacitance between terminals  
Electro static discharge resistance  
CT  
120  
22  
R
ESD  
C=200pF, R=01pulse  
1/2  
RSX201L-30  
Diodes  
zElectrical characteristic curves (Ta=25°C)  
10000  
100000  
10000  
1000  
100  
Ta=150°C  
Ta=125°C  
f=1MHz  
Ta=25°C  
Ta=150°C  
Ta=125°C  
Ta=75°C  
10000  
1000  
100  
10  
1000 Ta=25°C  
Ta= −25°C  
Ta=75°C  
100  
10  
1
Ta=25°C  
Ta= −25°C  
1
10  
0
100  
200  
300  
400  
500  
0.10  
10  
20  
30  
0
10  
20  
30  
FORWARD VOLTAGE : V  
F
(mV)  
REVERSE VOLTAGE : V  
R
(V)  
REVERSE VOLTAGE : VR (V)  
Fig.1 Forward Temperature  
Characteristics  
Fig.2 Reverse Temperature  
Characteristics  
Fig.3 Capacitance Between  
Terminals Characteristics  
1000  
100  
10  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
PMDS  
Rth (j-a) =94°C / W  
0A  
0V  
IO  
V
R
DC  
DC  
D=t / T  
=15V  
Tj=150°C  
t
When mounted on a glass epoxy board.  
V
R
T
D=1 / 2  
D=1 / 2  
Sin (θ=180)  
Sin (θ=180)  
0A  
0V  
IO  
V
R
t
D=t / T  
=15V  
Tj=150°C  
T
V
R
1
0.1  
1
10  
100  
1000  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
It (s)  
AMBIENT TEMPERATURE : Ta (°C)  
CASE TEMPERATURE : Tc (°C)  
Fig.5 Derating curve (I  
O
-Ta)  
Fig.6 Derating curve (IO-Tc)  
Fig.4 Thermal resistance  
200  
30  
25  
20  
15  
10  
5
Ta=25°C  
30kV Over  
150  
100  
50  
8.3ms 8.3ms  
1cyc.  
Ta=25°C  
1pulse  
200pF  
100pF  
0Ω  
1.5kΩ  
Machine Model  
Humanbody Model  
0
0
0
10  
100  
N (Cyc)  
Fig.7 Forward peak surge current  
(Acctual data)  
Fig.8 ESD resistance  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document use silicon as a basic material.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.0  

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