RSX301L-30_11 [ROHM]

Schottky Barrier Diode; 肖特基二极管
RSX301L-30_11
型号: RSX301L-30_11
厂家: ROHM    ROHM
描述:

Schottky Barrier Diode
肖特基二极管

肖特基二极管
文件: 总4页 (文件大小:1005K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
Schottky Barrier Diode  
RSX301L-30  
Applications  
Dimensions(Unit : mm)  
Land size figure (Unit : mm)  
General rectification  
2.0  
2.6±0.2  
Features  
1)Small power mold type. (PMDS)  
2)Low VF,Low IR  
5
6
3)High reliability  
0.1±0.02  
ꢀꢀꢀ 0.1  
PMDS  
2.0±0.2  
1.5±0.2  
Construction  
Silicon epitaxial planar  
Structure  
ROHM : PMDS  
JEDEC : SOD-106  
Manufacture Date  
Taping specifications(Unit : mm)  
2.0±0.05  
4.0±0.1  
0.3  
φ1.55±0.05  
φ1.55  
2.9±0.1  
4.0±0.1  
2.8MAX  
Absolute maximum ratings(Ta=25°C)  
Parameter  
Limits  
30  
Symbol  
VRM  
Unit  
V
Reverse voltage (repetitive)  
Reverse voltage (DC)  
VR  
30  
V
Average rectified forward current  
Forward current surge peak (60Hz1cyc)(*1)  
Junction temperature  
3
Io  
IFSM  
A
70  
A
150  
Tj  
°C  
°C  
Storage temperature  
40 to 150  
Tstg  
(*1)Tc=90°C max Mounted on epoxy board. 180°Half sine wave  
Electrical characteristics(Ta=25°C)  
Parameter  
Forward voltage  
Conditions  
Symbol  
VF  
Min.  
Typ.  
Max.  
0.42  
90  
Unit  
V
-
-
-
-
-
-
IF=3.0A  
VR=15V  
VR=30V  
IR1  
μA  
μA  
Reverse current  
IR2  
200  
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© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  
2011.05 - Rev.D  
Data Sheet  
RSX301L-30  
10  
1000000  
100000  
10000  
1000  
100  
Ta=150℃  
Ta=125℃  
1000  
100  
10  
Ta=75℃  
Ta=125℃  
f=1MHz  
1
0.1  
Ta=150℃  
Ta=25℃  
Ta=75℃  
Ta=25℃  
Ta=-25℃  
0.01  
0.001  
Ta=-25℃  
10  
1
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
0
100  
200  
300  
400  
500  
600  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
FORWARD VOLTAGE:VF(mV)  
VF-IF CHARACTERISTICS  
400  
390  
380  
370  
360  
350  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
850  
840  
830  
820  
810  
800  
790  
780  
770  
760  
750  
Ta=25℃  
IF=3A  
n=30pcs  
Ta=25℃  
f=1MHz  
VR=0V  
Ta=25℃  
VR=30V  
n=30pcs  
n=10pcs  
AVE:66.90uA  
AVE:800.8pF  
AVE:379.8mV  
VF DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
30  
25  
20  
15  
10  
5
200  
150  
100  
50  
300  
250  
200  
150  
100  
50  
Ifsm  
1cyc  
Ta=25℃  
IF=0.5A  
IR=1A  
Irr=0.25*IR  
n=10pcs  
Ifsm  
8.3ms  
8.3ms 8.3ms  
1cyc  
AVE:178.0A  
AVE:11.8ns  
0
0
0
1
10  
NUMBER OF CYCLES  
IFSM-CYCLE CHARACTERISTICS  
100  
trr DISPERSION MAP  
IFSM DISPERSION MAP  
Mounted on epoxy board  
300  
250  
200  
150  
100  
50  
1000  
100  
10  
3
2
1
0
IM=100mA  
IF=1A  
Ifs  
Rth(j-a)  
Rth(j-c)  
t
time  
1ms  
D=1/2  
DC  
300us  
Sin(θ=180)  
1
0
0.1  
1
10  
100  
0
1
2
3
4
5
0.001 0.01  
0.1  
1
TIME:t(s)  
Rth-t CHARACTERISTICS  
10  
100  
1000  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
AVERAGE RECTIFIED  
FORWARD CURRENT:Io(A)  
Io-Pf CHARACTERISTICS  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/3  
2011.05 - Rev.D  
Data Sheet  
RSX301L-30  
7
6
5
4
3
2
1
0
5
4
3
2
1
Io  
7
6
5
4
3
2
1
0
0A  
0V  
VR  
Io  
0A  
0V  
t
D=t/T  
VR=15V  
Tj=150℃  
VR  
t
DC  
T
D=t/T  
VR=15V  
Tj=150℃  
T
DC  
DC  
D=1/2  
Sin(θ=180)  
D=1/2  
Sin(θ=180)  
Sin(θ=180)  
D=1/2  
0
0
10  
20  
30  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
AMBIENT TEMPERATURE:Ta(℃)  
Derating Curve゙(Io-Ta)  
CASE TEMPARATURE:Tc(℃)  
Derating Curve゙(Io-Tc)  
30  
25  
20  
15  
10  
5
No break at 30kV No break at 30kV  
0
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
ESD DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/3  
2011.05 - Rev.D  
Notice  
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More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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