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RT1E060XN [ROHM]

4V Drive Nch MOSFET; 4V驱动N沟道MOSFET
RT1E060XN
型号： RT1E060XN
厂家： ROHM    ROHM
描述：

4V Drive Nch MOSFET
4V驱动N沟道MOSFET

驱动
文件： 总7页 (文件大小：1146K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Data Sheet  
4V Drive Nch MOSFET  
RT1E060XN  
Structure  
Dimensions (Unit : mm)  
Silicon N-channel MOSFET  
TSST8  
(8)  
(1)  
(7)  
(2)  
(6)  
(3)  
(5)  
(4)  
Features  
1) Low on-resistance.  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TSST8).  
Abbreviated symbol : XR  
Application  
Switching  
Packaging specifications  
Inner circuit  
Package  
Taping  
TCR  
3000  
(8)  
(7)  
(6)  
(5)  
Type  
Code  
Basic ordering unit (pieces)  
∗2  
RT1E060XN  
(1) Drain  
(2) Drain  
(3) Drain  
(4) Gate  
(5) Source  
(6) Drain  
(7) Drain  
(8) Drain  
∗1  
Absolute maximum ratings (Ta = 25C)  
Parameter Symbol  
Drain-source voltage  
Limits  
Unit  
V
(1)  
(2)  
(3)  
(4)  
VDSS  
VGSS  
ID  
30  
∗1 ESD PROTECTION DIODE  
∗2 BODY DIODE  
Gate-source voltage  
20  
V
Continuous  
Pulsed  
6  
A
Drain current  
*1  
IDP  
24  
A
Continuous  
Pulsed  
IS  
1
24  
A
Source current  
(Body Diode)  
*1  
*2  
ISP  
A
Power dissipation  
PD  
1.25  
W
C  
C  
Channel temperature  
Tch  
Tstg  
150  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
55 to 150  
*2 Mounted on a ceramic board.  
Thermal resistance  
Parameter  
Symbol  
Rth (ch-a)*  
Limits  
100  
Unit  
Channel to Ambient  
*Mounted on a ceramic board.  
C / W  
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2011.04 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/6  
Data Sheet  
RT1E060XN  
Electrical characteristics (Ta = 25C)  
Parameter  
Symbol  
IGSS  
Min.  
Typ.  
-
Max.  
Unit  
A VGS=20V, VDS=0V  
ID=1mA, VGS=0V  
A VDS=30V, VGS=0V  
Conditions  
Gate-source leakage  
-
10  
Drain-source breakdown voltage V(BR)DSS  
30  
-
-
1
2.5  
22  
29  
32  
-
V
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
-
-
VGS (th)  
1.0  
-
V
VDS=10V, ID=1mA  
ID=6A, VGS=10V  
ID=6A, VGS=4.5V  
ID=6A, VGS=4.0V  
ID=6A, VDS=10V  
-
16  
21  
23  
-
Static drain-source on-state  
resistance  
*
RDS (on)  
m  
-
-
*
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
l Yfs l  
Ciss  
4.5  
S
-
-
-
-
-
-
-
-
-
-
440  
170  
85  
8
-
pF VDS=10V  
pF VGS=0V  
pF f=1MHz  
ns ID=3A, VDD 15V  
ns VGS=10V  
ns RL=5  
Coss  
Crss  
-
-
td(on)  
-
*
*
*
*
*
*
*
tr  
td(off)  
tf  
16  
32  
8
-
Turn-off delay time  
Fall time  
-
-
ns RG=10  
nC ID=6A, VDD 15V  
nC VGS=5V  
nC  
Total gate charge  
Gate-source charge  
Gate-drain charge  
Qg  
Qgs  
Qgd  
6.8  
1.6  
2.6  
-
-
-
*Pulsed  
Body diode characteristics (Source-Drain) (Ta = 25C)  
Parameter  
Forward Voltage  
Symbol  
Min.  
-
Typ.  
-
Max. Unit  
1.2  
Conditions  
*
VSD  
V
Is=6A, VGS=0V  
*Pulsed  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2011.04 - Rev.A  
2/6  
Data Sheet  
RT1E060XN  
ꢀ
Electrical characteristic curves (Ta=25C)  
Fig.2 Typical Output Characteristics (Ⅱ)  
Fig.1 Typical Output Characteristics (Ⅰ)  
6
5
4
3
2
1
0
6
Ta=25°C  
VGS=3.0V  
Pulsed  
VGS=10.0V  
VGS=4.5V  
5
VGS=10.0V  
VGS=4.0V  
VGS=2.8V  
VGS=2.5V  
VGS=4.5V  
VGS=4.0V  
4
3
2
1
0
VGS=3.0V  
VGS=2.8V  
VGS=2.5V  
Ta=25°C  
Pulsed  
0
0.2  
0.4  
0.6  
0.8  
1
0
2
4
6
8
10  
Drain-Source Voltage : VDS [V]  
Drain-Source Voltage : VDS [V]  
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current  
100  
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current  
100  
10  
1
VGS=10V  
pulsed  
Ta=25°C  
Pulsed  
10  
VGS=4.0V  
VGS=4.5V  
VGS=10V  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1
0.01  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Drain Current : ID [A]  
Drain Current : ID [A]  
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current  
100  
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current  
100  
VGS=4.5V  
pulsed  
VGS=4V  
pulsed  
Ta=125°C  
10  
10  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1
0.01  
1
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
Drain Current : ID [A]  
Drain Current : ID [A]  
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© 2011 ROHM Co., Ltd. All rights reserved.  
3/6  
2011.04 - Rev.A  
Data Sheet  
RT1E060XN  
ꢀ
Fig.8 Typical Transfer Characteristics  
Fig.7 Forward Transfer Admittance vs. Drain Current  
100  
10  
100  
10  
VDS=10V  
pulsed  
VDS=10V  
pulsed  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
1
1
0.1  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
0.1  
0.01  
0.01  
0.001  
0.001  
0.01  
0.1  
1
10  
100  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
Gate-Source Voltage : VGS [V]  
Drain Current : ID [A]  
Fig.9 Source Current vs. Source-Drain Voltage  
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage  
100  
100  
10  
VGS=0V  
pulsed  
Ta=25°C  
Pulsed  
80  
ID=6.0A  
ID=3.0A  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=-25°C  
60  
1
40  
20  
0
0.1  
0.01  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
Gate-Source Voltage : VGS [V]  
Source-Drain Voltage : VSD [V]  
Fig.11 Switching Characteristics  
Fig.12 Dynamic Input Characteristics  
1000  
100  
10  
10  
8
V
DD≒15V  
Ta=25°C  
VDD=15V  
ID=6A  
VGS=10V  
RG=10Ω  
Ta=25°C  
Pulsed  
tf  
Pulsed  
td(off)  
6
td(on)  
4
2
tr  
1
0
0.01  
0.1  
1
10  
100  
0
2
4
6
8
10  
12  
14  
Total Gate Charge : Qg [nC]  
Drain Current : ID [A]  
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© 2011 ROHM Co., Ltd. All rights reserved.  
4/6  
2011.04 - Rev.A  
Data Sheet  
RT1E060XN  
ꢀ
Fig.13 Typical Capacitance vs. Drain-Source Voltage  
Fig.14 Maximum Safe Operating Area  
10000  
1000  
100  
100  
10  
Operation in this area is limited by RDS(on)  
(VGS = 10V)  
Ta=25°C  
f=1MHz  
VGS=0V  
PW = 100μs  
1
Ciss  
PW = 1ms  
PW = 10ms  
Coss  
0.1  
Ta=25°C  
Crss  
Single Pulse  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
DC operation  
100  
10  
0.01  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
Drain-Source Voltage : VDS [ V ]  
Drain-Source Voltage : VDS [V]  
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width  
10  
Ta=25°C  
Single Pulse  
1
0.1  
0.01  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
Rth(ch-a)=100°C/W  
Rth(ch-a)(t)=r(t)×Rth(ch-a)  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse width : Pw (s)  
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© 2011 ROHM Co., Ltd. All rights reserved.  
5/6  
2011.04 - Rev.A  
Data Sheet  
RT1E060XN  
Measurement circuits  
Pulse width  
90%  
VGS  
ID  
VDS  
50%  
10%  
50%  
V
V
GS  
DS  
R
L
10%  
10%  
90%  
D.U.T.  
V
DD  
RG  
90%  
t
d(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2ꢀSwitching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
V
G
VGS  
I
D
VDS  
Q
g
RL  
V
GS  
D.U.T.  
I
G(Const.)  
Q
gs  
Qgd  
VDD  
Charge  
Fig.2-2 Gate Charge Waveform  
Fig.2-1 Gate Charge Measurement Circuit  
Notice  
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design  
ESD protection circuit.  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2011.04 - Rev.A  
6/6  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
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© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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