RTF020P02TR [ROHM]

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN;


型号：	RTF020P02TR
厂家：	ROHM
描述：	Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN 开关光电二极管晶体管
文件：	总5页 (文件大小：110K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RTF020P02

Transistors

2.5V Drive Pch MOS FET

RTF020P02

zExternal dimensions (Unit : mm)

zStructure

Silicon P-channel

MOS FET

TUMT3

0.85Max.

0.77

2.0

0.3

(3)

zFeatures

0~0.1

1) Low on-resistance. (120mΩ at 2.5V)

2) High power package.

3) High speed switching.

4) Low voltage drive. (2.5V)

(1) (2)

0.17

0.65 0.65

1.3

(1) Gate

(2) Source

(3) Drain

Abbreviated symbol : WM

zApplications

DC-DC converter

zPackaging specifications

zEquivalent circuit

Package

Taping

(3)

Type

Code

Basic ordering unit (pieces)

3000

RTF020P02

(1)

∗2

∗1

(2)

(1) Gate

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−20

Unit

Continuous

2.0

Drain current

Pulsed

∗1

I_DP

∗1

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.6

−8

0.8

I_SP

∗2

Total power dissipation

Channel temperature

P_D

°C

Tch

150

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

−55 to +150

°C

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

156

Unit

Channel to ambient

∗ Mounted on a ceramic board.

°C / W

Rev.B

1/4

RTF020P02

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS= 12V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}−20

Zero gate voltage drain current

µA

I_D= −1mA, V_GS=0V

I_DSS

−

120

−

640

110

7.0

1.6

2.0

−1

−2.0

165

−

V_DS= −20V, V_GS=0V

_DS= −10V, I_D= −1mA

Gate threshold voltage

V_{GS (th)}−0.7

−

mΩ I_D= −2A, V_GS= −4.5V

mΩ I_D= −2A, V_GS= −4V

mΩ I_D= −1A, V_GS= −2.5V

∗

Static drain-source on-state

resistance

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

2.0

_DS= −10V, I_D= −1A

_DS= −10V

_GS=0V

−

C_oss

C_rss

t_{d (on)}

f=1MHz

∗

= −1A

DD −15V

GS= −4.5V

Turn-off delay time

Fall time

t_{d (off)}

t_f

=15Ω

=10Ω

Total gate charge

Gate-source charge

Q_g

nC V_DD−15V

nC _GS= −4.5V

=7.5Ω

=10Ω

Q_gs

Q_gd

−

Gate-drain charge

nC I_D= −2A

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

I_S= −0.6A, V_GS=0V

Unit

Forward voltage

−

−1.2

Rev.B

2/4

RTF020P02

Transistors

zElectrical characteristic curves

1000

100

1000

100

V_DS= −10V

Pulsed

Ta=25°C

Pulsed

V_GS

Pulsed

= −4.5V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=75°C

V_GS= −2.5V

V_GS= −4.0V

V_GS= −4.5V

Ta=25°C

Ta= −25°C

0.1

0.01

0.001

0.1

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

0.1

DRAIN CURRENT : −I_D(A)

GATE-SOURCE VOLTAGE : −V_GS(V)

Fig.2 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.3 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.1 Typical Transfer Characteristics

1000

100

V_GS

Pulsed

−

V_GS

Pulsed

−

2.5V

V_GS=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

100

0.1

0.01

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

DRAIN CURRENT : −I_D(A)

SOURCE-DRAIN VOLTAGE : −V_SD(V)

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.6 Reverse Drain Current vs.

Source-Drain Voltage

10000

Ta=25°C

V_DD= −15V

V_GS= −4.5A

R_G=10Ω

Ta=25°C

f=1MHz

V_GS=0V

V_DD= −15V

I_D= −2A

R_G=10Ω

1000

100

Pulsed

1000

100

Ciss

d (off)

oss

rss

d (on)

0.01

0.1

0.01

0.1

100

DRAIN CURRENT : −I_D(A)

DRAIN-SOURCE VOLTAGE : −V_DS(V)

TOTAL GATE CHARGE : Qg (nC)

Fig.8 Switching Characteristics

Fig.7 Typical Capacitance

vs. Drain-Source Voltage

Fig.9 Dynamic Input Characteristics

Rev.B

3/4

RTF020P02

Transistors

zMeasurement circuits

Pulse Width

VGS

10%

50%

90%

10%

90%

10%

D.U.T.

90%

^DStd(on)

td(off)

toff

Fig.11 Switching Waveforms

Fig.10 Switching Time Measurement Circuit

VGS

G(Const.)

D.U.T.

Qgd

Charge

Fig.12 Gate Charge Measurement Circuit

Fig.13 Gate Charge Waveforms

Rev.B

4/4

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

RTF020P02TR [ROHM]

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