RTQ035N03HZGTR [ROHM]

Small Signal Field-Effect Transistor,;


型号：	RTQ035N03HZGTR
厂家：	ROHM
描述：	Small Signal Field-Effect Transistor, 驱动
文件：	总3页 (文件大小：61K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RTQ035N03

Transistors

2.5V Drive Nch MOS FET

RTQ035N03

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

TSMT6

1.0MAX

2.9

1.9

0.95 0.95

0.85

0.7

zFeatures

(6)

(5)

(4)

1) Low On-resistance.

2) Space saving, small surface mount package (TSMT6).

3) Low voltage drive (2.5V drive).

0~0.1

(1)

(2)

(3)

1pin mark

0.16

0.4

Each lead has same dimensions

Abbreviated symbol : QP

zApplications

Switching

zPackaging specifications

zInner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

∗2

RTQ035N03

∗1

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

3.5

Drain current

Pulsed

∗1

I_DP

I_S

Source current

(Body diode)

Continuous

1.0

∗1

∗2

Pulsed

I_SP

4.0

Total power dissipation

Channel temperature

P_D

1.25

150

°C

Tch

Tstg

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

100

Unit

∗

Channel to ambient

∗ Mounted on a ceramic board

Rth(ch-a)

°C/W

1/2

RTQ035N03

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS=12V, V_DS=0V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}30

µA

I_D= 1mA, V_GS=0V

Zero gate voltage drain current

Gate threshold voltage

I_DSS

−

0.5

−

V_DS= 30V, V_GS=0V

_DS= 10V, I_D= 1mA

V_{GS (th)}

1.5

−

6.4

−

285

mΩ I_D= 3.5A, V_GS= 4.5V

mΩ I_D= 3.5A, V_GS= 4.0V

mΩ I_D= 3.5A, V_GS= 2.5V

Static drain-source on-state

resistance

∗

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

3.0

_DS= 10V, I_D= 3.5A

−

_DS= 10V

C_oss

C_rss

t_{d (on)}

_GS=0V

f=1MHz

∗

VDD 15V

= 1.75A

4.6

0.7

1.5

GS= 4.5V

Turn-off delay time

Fall time

t_{d (off)}

=8.57Ω

∗

t_f

=10Ω

Total gate charge

Gate-source charge

Q_g

nC V_DD15V

nC _GS= 4.5V

nC I_D= 3.5A

∗

Q_gs

Q_gd

−

Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Forward voltage

Symbol Min. Typ. Max.

Conditions

I_S= 4A, V_GS=0V

Unit

∗

−

1.2

∗Pulsed

2/2

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

RTQ035N03HZGTR [ROHM]

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