RUL035N02FRA [ROHM]
RUL035N02FRA是适合开关用途的车载型高可靠性MOSFET。;
| 型号： | RUL035N02FRA |
| 厂家： | 
ROHM |
| 描述： | RUL035N02FRA是适合开关用途的车载型高可靠性MOSFET。 开关 |
| 文件： | 总11页 (文件大小：681K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RUL035N02
FRA
Nch 20V 3.5A Power MOSFET
Datasheet
ꢀOutline
(6)
VDSS
RDS(on) (Max.)
20V
43mꢀ
3.5A
(5)
TUMT6
(4)
ID
(1)
(2)
(3)
PD
1.0W
ꢀFeatures
ꢀInner circuit
1) Low on - resistance.
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
2) 1.5V Drive.
3) Built-in G-S Protection Diode.
4) Small Surface Mount Package (TUMT6).
5) Pb-free lead plating ; RoHS compliant
6) AEC-Q101 Qualified
ꢄ1 ESD PROTECTION DIODE
ꢄ2 BODY DIODE
ꢀPackaging specifications
Packaging
Taping
180
8
Reel size (mm)
ꢀApplication
Tape width (mm)
Type
DC/DC converters
3,000
TR
Quantity (pcs)
Taping code
Marking
XD
ꢀAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
20
Unit
V
Drain - Source voltage
Continuous drain current
Pulsed drain current
*1
A
ID
ꢁ3.5
ꢁ7
*2
A
ID,pulse
VGSS
Gate - Source voltage
V
ꢁ10
1.0
*3
W
W
°C
°C
PD
Power dissipation
*4
0.32
150
PD
Tj
Junction temperature
Tstg
Range of storage temperature
ꢂ55 to ꢃ150
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© 2013 ROHM Co., Ltd. All rights reserved.
1/11
2019.05 - Rev.C
Data Sheet
Unit
FRA
RUL035N02
ꢀThermal resistance
Parameter
Values
Symbol
Min.
Typ.
Max.
*3
-
-
-
-
125
391
°C/W
°C/W
RthJA
Thermal resistance, junction - ambient
*4
RthJA
ꢀElectrical characteristics(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
20
Max.
-
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
-
ΔV(BR)DSS
ΔTj
ID=1mA
referenced to 25°C
Breakdown voltage
temperature coefficient
-
20
-
mV/°C
IDSS
IGSS
VDS = 20V, VGS = 0V
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
-
-
-
-
-
1
ꢆA
ꢆA
V
VGS = ꢁ10V, VDS = 0V
ꢁ10
1.0
VGS (th) VDS = 10V, ID = 1mA
0.3
ΔV(GS)th
ΔTj
ID=1mA
referenced to 25°C
Gate threshold voltage
temperature coefficient
-
-
mV/°C
ꢂ1.9
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=3.5A
VGS=1.8V, ID=1.8A
VGS=1.5V, ID=0.7A
VGS=4.5V, ID=3.5A, Tj=125°C
f = 1MHz, open drain
VDS=10V, ID=3.5A
-
31
38
50
66
56
7.5
8.5
43
53
70
93
80
-
-
Static drain - source
on - state resistance
*5
-
RDS(on)
mꢀ
-
-
RG
Gate input resistannce
Transconductance
-
ꢀ
*5
3.2
-
S
gfs
*1 Limited only by maximum temperature allowed.
*2 Pw ꢅ 10ꢆs, Duty cycle ꢅ 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
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© 2013 ROHM Co., Ltd. All rights reserved.
2/11
2019.05 - Rev.C
Data Sheet
Unit
FRA
RUL035N02
ꢀElectrical characteristics(Ta = 25°C)
Parameter Symbol
Input capacitance
Values
Typ.
460
110
60
Conditions
VGS = 0V
Min.
Max.
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 10V
f = 1MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
*5
VDD 䏡 10V, VGS = 4.5V
10
td(on)
*5
ID = 1.8A
RL = 5.6ꢀ
RG = 10ꢀ
20
tr
*5
Turn - off delay time
Fall time
40
td(off)
*5
50
tf
ꢀGate Charge characteristics(Ta = 25°C)
Values
Typ.
5.7
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*5
Total gate charge
-
-
-
-
-
-
Qg
V
DD 䏡 10, ID=3.5A
VGS = 4.5V
*5
Gate - Source charge
Gate - Drain charge
1.1
Qgs
*5
0.9
Qgd
ꢀBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
0.8
Inverse diode continuous,
forward current
*1
Ta = 25°C
VGS = 0V, Is = 0.8A
-
-
-
-
A
V
IS
*5
Forward voltage
1.2
VSD
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© 2013 ROHM Co., Ltd. All rights reserved.
3/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
Operation in this area
is limited by RDS(on)
( VGS = 10V 䠅
PW = 100ꢆs
100
80
60
40
20
0
10
PW = 1ms
1
PW = 10ms
DC Operation
0.1
0.01
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm 㽢 30mm 㽢 0.8mm)
0.1
1
10
100
0
50
100
150
200
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [rC]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Fig.4 Single Pulse Maxmum Power
dissipation
1000
Ta=25ºC
Single Pulse
Ta=25ºC
Single Pulse
1
100
10
1
top
D=1
D=0.5
D=0.1
D=0.05
D=0.01
0.1
0.01
bottom Signle
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)㽢Rth(ch-a)
Mounted on ceramic board
(30mm 㽢 30mm 㽢 0.8mm)
0.001
0.0001
0.01
1
100
0.0001
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2013 ROHM Co., Ltd. All rights reserved.
4/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀElectrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
Ta=25ºC
Pulsed
Ta=25ºC
Pulsed
VGS=4.5V
VGS=2.5V
VGS=4.5V
3
2
1
0
3
VGS=1.5V
VGS=1.8V
VGS=2.5V
VGS=1.8V
2
VGS=1.5V
VGS=1.3V
VGS=1.2V
1
VGS=1.3V
VGS=1.1V
VGS=1.1V
0.8
Drain - Source Voltage : VDS [V]
0
0
2
4
6
8
10
0
0.2
0.4
0.6
1
Drain - Source Voltage : VDS [V]
Fig.7 Breakdown Voltage
㻌 㻌 㻌 vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
60
VGS = 0V
ID = 1mA
pulsed
40
20
0
-50
0
50
100
150
Junction Temperature : Tj [rC]
Gate - Source Voltage : VGS [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀElectrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
100
10
1
2
VDS= 10V
Pulsed
VDS = 10V
ID = 1mA
pulsed
Ta= ꢂ25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
1
0
0.1
0.01
0.1
1
10
-50
0
50
100
150
Junction Temperature : Tj [rC]
Drain Current : ID [A]
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
0
1.2
1
0.8
0.6
0.4
0.2
0
-25
0
25
50
75 100 125 150
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
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© 2013 ROHM Co., Ltd. All rights reserved.
2019.05 - Rev.C
6/11
Data Sheet
FRA
RUL035N02
ꢀElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
60
50
40
30
20
10
0
VGS = 10V
ID=3.5A
pulsed
-50 -25
0
25 50 75 100 125 150
Drain Current : ID [A]
Junction Temperature : Tj [ºC]
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© 2013 ROHM Co., Ltd. All rights reserved.
7/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
Drain Current : ID [A]
Drain Current : ID [A]
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(V)
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Drain Current : ID [A]
Drain Current : ID [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
8/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀElectrical characteristic curves
Fig.19 Typical Capacitance
㻌 㻌 㻌 㻌 㻌 vs. Drain - Source Voltage
Fig.20 Switching Characteristics
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.22 Source Current
㻌 㻌 㻌 㻌 㻌 vs. Source Drain Voltage
Fig.21 Dynamic Input Characteristics
Source-Drain Voltage : VSD [V]
Total Gate Charge : Qg [nC]
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© 2013 ROHM Co., Ltd. All rights reserved.
9/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2䚷Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2013 ROHM Co., Ltd. All rights reserved.
10/11
2019.05 - Rev.C
Data Sheet
FRA
RUL035N02
ꢀDimensions (Unit : mm)
㻰
㻭
㼑
TUMT6
㼎
㼏
㼤
㻿 㻭
㼑
㼥
㻿
㻿
㼎㻞
Patterm of terminal position areas
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻹㻭㼄
㻵㻺㻯㻴㻱㻿
㻰㻵㻹
㻹㻵㻺
㻙
㻹㻵㻺
㻙
㻜
㻜㻚㻜㻞㻤
㻜㻚㻜㻝
㻜㻚㻜㻜㻡
㻜㻚㻜㻣㻡
㻜㻚㻜㻢㻟
㻹㻭㼄
㻜㻚㻜㻟㻟
㻜㻚㻜㻜㻠
㻜㻚㻜㻟㻞
㻜㻚㻜㻝㻢
㻜㻚㻜㻜㻥
㻜㻚㻜㻤㻟
㻜㻚㻜㻣㻝
㻭
㻭㻝
㻭㻞
㼎
㼏
㻰
㻜㻚㻤㻡
㻜㻚㻝㻜
㻜㻚㻤㻞
㻜㻚㻠㻜
㻜㻚㻞㻞
㻞㻚㻝㻜
㻝㻚㻤㻜
㻜㻚㻜㻜
㻜㻚㻣㻞
㻜㻚㻞㻡
㻜㻚㻝㻞
㻝㻚㻥㻜
㻝㻚㻢㻜
㻱
㻜㻚㻢㻡
㻜㻚㻞㻜
㻜㻚㻜㻟
㻜㻚㻜㻝
㼑
㻴
㻱
㻞㻚㻜㻜
㻞㻚㻞㻜
㻜㻚㻜㻣㻥
㻜㻚㻜㻤㻣
㻸
㻸㼜
㼤
㼥
㻙
㻙
㻙
㻜㻚㻠㻜
㻜㻚㻝㻜
㻜㻚㻝㻜
㻙
㻙
㻙
㻜㻚㻜㻝㻢
㻜㻚㻜㻜㻠
㻜㻚㻜㻜㻠
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻹㻭㼄
㻝㻚㻣㻜
㻵㻺㻯㻴㻱㻿
㻜㻚㻜㻢㻣
㻰㻵㻹
㻹㻵㻺
㻹㻵㻺
㻹㻭㼄
㼑㻝
㼎㻞
㼘㻝
㻙
㻙
㻜㻚㻡㻜
㻜㻚㻡㻜
㻙
㻙
㻜㻚㻜㻞
㻜㻚㻜㻞
Dimension in mm/inches
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© 2013 ROHM Co., Ltd. All rights reserved.
2019.05 - Rev.C
11/11
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