RW1A025APT2R [ROHM]

Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WEMT6, 6 PIN;


型号：	RW1A025APT2R
厂家：	ROHM
描述：	Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, WEMT6, 6 PIN 开关光电二极管晶体管
文件：	总12页 (文件大小：613K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RW1A025AP

Pch -12V -2.5A Power MOSFET

Datasheet

lOutline

(6)

V_DSS

-12V

62mW

-2.5A

0.7W

(5)

WEMT6

(4)

R_DS(on)(Max.)

(1)

I_D

(2)

P_D

(3)

lFeatures

lInner circuit

1) Low on - resistance.

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

2) -1.5V Drive.

3) Built-in G-S Protection Diode.

4) Small Surface Mount Package (WEMT6).

5) Pb-free lead plating ; RoHS compliant

*1 ESD PROTECTION DIODE

*2 BODY DIODE

lPackaging specifications

Packaging

Taping

180

Reel size (mm)

lApplication

Tape width (mm)

Type

DC/DC converters

Basic ordering unit (pcs)

8,000

T2R

Taping code

Marking

lAbsolute maximum ratings(T_a= 25°C)

Parameter

Symbol

Value

-12

Unit

V_DSS

Drain - Source voltage

Continuous drain current

Pulsed drain current

I_D

2.5

I_D,pulse

V_GSS

7.5

Gate - Source voltage

0 to -8

0.7

°C

P_D

Power dissipation

0.4

P_D

T_j

Junction temperature

150

T_stg

Range of storage temperature

-55 to +150

www.rohm.com

2013.02 - Rev.B

1/11

Data Sheet

RW1A025AP

lThermal resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

179

313

°C/W

R_thJA

Thermal resistance, junction - ambient

R_thJA

lElectrical characteristics(T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Drain - Source breakdown

voltage

V_(BR)DSS

V_GS= 0V, I_D= -1mA

-12

ΔV_(BR)DSS

ΔT_j

I_D= -1mA

referenced to 25°C

Breakdown voltage

temperature coefficient

mV/°C

-12

I_DSS

I_GSS

V_DS= -12V, V_GS= 0V

V_GS= -8V, V_DS= 0V

V_DS= -6V, I_D= 1mA

Zero gate voltage drain current

Gate - Source leakage current

Gate threshold voltage

-1

-10

-1

V_{GS (th)}

-0.3

ΔV_(GS)th

ΔT_j

I_D= -1mA

referenced to 25°C

Gate threshold voltage

temperature coefficient

2.6

mV/°C

V_GS= -4.5V, I_D= -2.5A

V_GS= -2.5V, I_D= -1.2A

V_GS= -1.8V, I_D= -1.2A

V_GS= -1.5V, I_D= -0.5A

V_GS= -4.5V, I_D= -2.5A, T_j=125°C

f = 1MHz, open drain

V_DS= -6V, I_D= -2.5A

7.5

110

180

Static drain - source

on - state resistance

R_DS(on)

R_G

Gate input resistannce

Transconductance

3.5

g_fs

*1 Limited only by maximum temperature allowed.

*2 Pw  10ms, Duty cycle  1%

*3 Mounted on a ceramic board (30×30×0.8mm)

*4 Mounted on a FR4 (15×20×0.8mm)

*5 Pulsed

www.rohm.com

2013.02 - Rev.B

2/11

Data Sheet

RW1A025AP

lElectrical characteristics(T_a= 25°C)

Values

Typ.

2000

130

120

Parameter

Symbol

Conditions

V_GS= 0V

Unit

Min.

Max.

C_iss

C_oss

C_rss

Input capacitance

V_DS= -6V

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

f = 1MHz

_DD⋍ -6V, V_GS= -4.5V

t_d(on)

I_D= -1.2A

R_L= 5W

t_r

Turn - off delay time

Fall time

160

t_d(off)

R_G= 10W

t_f

lGate Charge characteristics(T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Total gate charge

Q_g

_DD⋍ -6V, I_D= -2.5A

V_GS= -4.5V

Gate - Source charge

Gate - Drain charge

2.4

Q_gs

2.2

Q_gd

lBody diode electrical characteristics (Source-Drain)(T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

-0.5

-1.2

Inverse diode continuous,

forward current

T_a= 25°C

I_S

V_GS= 0V, I_s= -2.5A

Forward voltage

V_SD

www.rohm.com

2013.02 - Rev.B

3/11

Data Sheet

RW1A025AP

lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

120

100

Operation in this area

is limited by R_DS(on)

( V_GS= -4.5V )

P_W= 1ms

P_W= 100ms

P_W= 10ms

DC Operation

0.1

0.01

T_a=25ºC

Single Pulse

Mounted on a ceramic board.

(30mm × 30mm × 0.8mm)

100

150

200

0.01

0.1

100

Drain - Source Voltage : -V_DS[V]

Junction Temperature : Tj [°C]

Fig.3 Normalized Transient Thermal

Resistance vs. Pulse Width

Fig.4 Single Pulse Maxmum Power

dissipation

1000

T_a=25ºC

Single Pulse

T_a=25ºC

Single Pulse

100

top

D=1

D=0.5

D=0.1

D=0.05

D=0.01

0.1

0.01

bottom Signle

Rth(ch-a)=179ºC/W

Rth(ch-a)(t)=r(t)×Rth(ch-a)

Mounted on ceramic board

(30mm × 30mm × 0.8mm)

0.001

0.0001

0.01

100

0.0001

0.01

100

Pulse Width : P_W[s]

www.rohm.com

2013.02 - Rev.B

4/11

Data Sheet

RW1A025AP

lElectrical characteristic curves

Fig.6 Typical Output Characteristics(II)

Fig.5 Typical Output Characteristics(I)

2.5

T_a=25ºC

Pulsed

T_a=25ºC

Pulsed

V_GS= -4.5V

V_GS= -2.5V

V_GS= -1.8V

V_GS= -1.2V

V_GS= -1.5V

1.5

V_GS= -4.5V

V_GS= -2.5V

V_GS= -1.8V

V_GS= -1.5V

V_GS= -1.2V

0.5

V_GS= -1.0V

0.2

0.4

0.6

0.8

Drain - Source Voltage : -V_DS[V]

Fig.7 Breakdown Voltage

vs. Junction Temperature

Fig.8 Typical Transfer Characteristics

V_GS= 0V

I_D= -1mA

pulsed

V_DS= -6V

Pulsed

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

0.1

0.01

0.001

-50

100

150

0.5

1.5

Junction Temperature : T_j[°C]

Gate - Source Voltage : -V_GS[V]

www.rohm.com

2013.02 - Rev.B

5/11

Data Sheet

RW1A025AP

lElectrical characteristic curves

Fig.9 Gate Threshold Voltage

vs. Junction Temperature

Fig.10 Transconductance vs. Drain Current

100

V_DS= -6V

Pulsed

V_DS= 10V

I_D= -1mA

pulsed

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

0.1

-50

100

150

Junction Temperature : T_j[°C]

Drain Current : -I_D[A]

Fig.11 Drain CurrentDerating Curve

Fig.12 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

1.2

150

100

T_a=25ºC

Pulsed

0.8

0.6

0.4

0.2

I_D= -1.25A

I_D= -2.5A

-25

75 100 125 150

Gate - Source Voltage : -V_GS[V]

Junction Temperature : T_j[ºC]

www.rohm.com

2013.02 - Rev.B

6/11

Data Sheet

RW1A025AP

lElectrical characteristic curves

Fig.13 Static Drain - Source On - State

Resistance vs. Drain Current(I)

Fig.14 Static Drain - Source On - State

Resistance vs. Junction Temperature

1000

T_a=25ºC

Pulsed

V_GS= -1.5V

V_GS= -1.8V

V_GS= -2.5V

V_GS= -4.5V

100

V_GS= -4.5V

I_D= -2.5A

pulsed

0.1

-50 -25

25 50 75 100 125 150

Drain Current : -I_D[A]

Junction Temperature : T_j[ºC]

www.rohm.com

2013.02 - Rev.B

7/11

Data Sheet

RW1A025AP

lElectrical characteristic curves

Fig.15 Static Drain - Source On - State

Resistance vs. Drain Current(II)

Fig.16 Static Drain-Source On-State

Resistance vs. Drain Current(III)

1000

100

V_GS= -2.5V

Pulsed

V_GS= -4.5V

Pulsed

T_a=125ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

T_a=125ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

100

0.1

Drain Current : -I_D[A]

Fig.18 Static Drain - Source On - State

Resistance vs. Drain Current(V)

Fig.17 Static Drain - Source On - State

Resistance vs. Drain Current(IV)

1000

V_GS= -1.5V

Pulsed

V_GS= -1.8V

Pulsed

T_a=125ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

T_a=125ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

100

0.1

Drain Current : -I_D[A]

www.rohm.com

2013.02 - Rev.B

8/11

Data Sheet

RW1A025AP

lElectrical characteristic curves

Fig.19 Typical Capacitance

vs. Drain - Source Voltage

10000

Fig.20 Switching Characteristics

1000

C_iss

t_d(off)

1000

100

t_f

C_oss

100

T_a=25ºC

C_rss

V_DD= -6V

V_GS= -4.5V

R_G=10W

Pulsed

T_a=25ºC

f=1MHz

V_GS=0V

t_d(on)

t_r

0.01

0.1

100

0.01

0.1

100

Drain - Source Voltage : -V_DS[V]

Drain Current : -I_D[A]

Fig.22 Source Current

vs. Source Drain Voltage

Fig.21 Dynamic Input Characteristics

V_GS=0V

Pulsed

T_a=125ºC

T_a=75ºC

T_a=25ºC

T_a= -25ºC

0.1

0.01

0.001

T_a=25ºC

V_DD= -6V

I_D= -2.5A

Pulsed

Total Gate Charge : Q_g[nC]

0.5

1.5

Source-Drain Voltage : -V_SD[V]

www.rohm.com

2013.02 - Rev.B

9/11

Data Sheet

RW1A025AP

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2ꢀSwitching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

www.rohm.com

2013.02 - Rev.B

10/11

Data Sheet

RW1A025AP

lDimensions (Unit : mm)

WEMT6

S A

Patterm of terminal position areas

MILIMETERS

MIN

INCHES

DIM

MAX

0.65

0.05

0.27

0.18

1.70

1.40

MIN

0.022

0.007

0.003

0.059

0.047

MAX

0.026

0.002

0.011

0.007

0.067

0.055

0.55

0.00

0.17

0.08

1.50

1.20

0.50

0.02

1.50

0.11

1.70

0.31

0.10

0.059

0.004

0.067

0.012

0.004

MILIMETERS

MAX

1.29

INCHES

0.051

DIM

MIN

MAX

0.37

0.41

0.015

0.016

Dimension in mm/inches

www.rohm.com

2013.02 - Rev.B

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

7) The Products specified in this document are not designed to be radiation tolerant.

8) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

9) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

11) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

12) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

13) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1102

RW1A025APT2R [ROHM]

相关型号：

RW1A030AP

RW1A030APT2CR

RW1A107M1012MSS

RW1A337M12020SS

RW1A476M0811MPG

RW1C015UN

RW1C015UNT2R

RW1C020UN

RW1C020UNT2R

RW1C025ZPT2CR

RW1CT52A18R9D

RW1CT52A25R8D