RYE002N05TL [ROHM]

Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, SC-75A, 3 PIN;


型号：	RYE002N05TL
厂家：	ROHM
描述：	Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT3, SC-75A, 3 PIN 开关光电二极管晶体管
文件：	总6页 (文件大小：303K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

0.9V Drive Nch MOSFET

RYE002N05

z Structure

z Dimensions (Unit : mm)

Silicon N-channel MOSFET

EMT3

(SC-75A)

<SOT-416>

zFeatures

1) High speed switing.

2) Small package(EMT3).

3) Ultra low voltage drive(0.9V drive).

Abbreviated symbol : QJ

z Application

Switching

z Packaging specifications

z Inner circuit

(3)

Package

Taping

TCL

3000

{

Type

Code

Basic ordering unit (pieces)

RYE002N05

z Absolute maximum ratings (Ta = 25°C)

Parameter Symbol

Drain-source voltage

(1) Source

(2) Gate

(3) Drain

(1)

(2)

(1)

Limits

Unit

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

V_DSS

V_GSS

I_D

Gate-source voltage

±8

Continuous

Pulsed

±200

±800

125

°C

Drain current

I_DP

Continuous

Pulsed

I_S

Source current

(Body Diode)

I_SP

800

Power dissipation

P_D

150

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw≤10µs, Duty cycle≤1%

−55 to +150

°C

*2 Each terminal mounted on a recommended land.

z Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

833

Unit

Channel to Ambient

°C / W

* Each terminal mounted on a recommended land.

www.rohm.com

2011.05 - Rev.B

1/5

Data Sheet

RYE002N05

ꢀ

z Electrical characteristics (Ta = 25°C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

µA V_GS=±8V, V_DS=0V

I_D=1mA, V_GS=0V

µA V_DS=50V, V_GS=0V

Conditions

Gate-source leakage

±10

Drain-source breakdown voltage V _(BR)DSS

Zero gate voltage drain current

Gate threshold voltage

I_DSS

V_{GS (th)}

0.3

0.8

2.2

2.4

2.8

3.3

9.0

Ω

V_DS=10V, I_D=1mA

1.6

1.7

2.0

2.2

3.0

I_D=200mA, V_GS=4.5V

I_D=200mA, V_GS=2.5V

I_D=200mA, V_GS=1.5V

I_D=100mA, V_GS=1.2V

I_D=10mA, V_GS=0.9V

I_D=200mA, V_DS=10V

Static drain-source on-state

resistance

R_{DS (on)}

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

0.2

C_iss

C_oss

C_rss

t_d(on)

t_r

pF V_DS=10V

pF V_GS=0V

pF f=1MHz

ns I_D=100mA, V_DD25V

ns V_GS=4.5V

ns R_L=250Ω

ns R_G=10Ω

Turn-off delay time

Fall time

t_d(off)

t_f

*Pulsed

zBody diode characteristics (Source-Drain) (Ta = 25°C)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.2

Conditions

V_SD

I_s=200mA, V_GS=0V

*Pulsed

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2/5

2011.05 - Rev.B

Data Sheet

RYE002N05

z Electrical characteristic curves (Ta = 25°C)

0.2

0.1

0.2

0.1

V_DS= 10V

Pulsed

V_GS= 4.5V

V_GS= 2.5V

V_GS= 1.5V

V_GS= 1.2V

T_a= 125°C

V_GS= 2.5V

V_GS= 1.5V

V_GS= 1.2V

T_a= 75°C

T_a= 25°C

V_GS= 0.9V

0.1

V_GS= 0.9V

V_GS= 0.8V

T_a= − 25°C

T_a=25°C

Pulsed

V_GS= 0.8V

0.01

0.001

T_a=25°C

Pulsed

V_GS= 0.7V

8 10

V_GS= 0.7V

0.8

0.2

0.4

0.6

0.8

0.2

0.4

0.6

DRAIN-SOURCE VOLTAGE : V_DS[V]

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.1 Typical Output Characteristics( Ⅰ)

Fig.2 Typical Output Characteristics( Ⅱ)

10000

1000

100

10000

1000

100

10000

1000

100

V_GS= 4.5V

Pulsed

T_a= 25°C

Pulsed

V_GS= 2.5V

Pulsed

T_a= 125°C

T_a= 75°C

T_a= 25°C

T_a= − 25°C

V_GS= 0.9V

V_GS= 1.2V

V_GS= 1.5V

V_GS= 2.5V

V_GS= 4.5V

T_a= 125°C

T_a= 75°C

T_a= 25°C

T_a= − 25°C

0.001

0.01

0.1

0.001

0.01

0.1

0.001

0.01

0.1

DRAIN-CURRENT : I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Fig.5 Static Drain-Source On-State

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

Resistance vs. Drain Current(Ⅲ)

10000

1000

100

10000

1000

100

10000

1000

100

V_GS= 1.2V

Pulsed

V_GS= 0.9V

Pulsed

V_GS= 1.5V

Pulsed

T_a= 125°C

T_a= 75°C

T_a= 25°C

T_a= − 25°C

T_a= 125°C

T_a= 75°C

T_a= 25°C

T_a= − 25°C

T_a= 125°C

T_a= 75°C

T_a= 25°C

T_a= − 25°C

0.001

0.01

0.1

0.001

0.01

0.1

0.001

0.01

0.1

DRAIN-CURRENT : I_D[A]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

Fig.8 Static Drain-Source On-State

Fig.9 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅴ)

Resistance vs. Drain Current(Ⅵ)

www.rohm.com

2011.05 - Rev.B

3/5

Data Sheet

RYE002N05

5000

4000

3000

2000

1000

V_DS= 10V

V_GS=0V

Pulsed

T_a=25°C

Pulsed

I_D= 0.01A

I_D= 0.20A

0.1

T_a= 125°C

T_a= 75°C

T_a= 25°C

T_a= − 25°C

T_a= −25°C

T_a=25°C

T_a=75°C

T_a=125°C

0.1

0.01

0.1

DRAIN-CURRENT : I_D[A]

0.5

1.5

SOURCE-DRAIN VOLTAGE : V_SD[V]

GATE-SOURCE VOLTAGE : V_GS[V]

Fig.12 Static Drain-Source On-State

Fig.10 Forward Transfer Admittance

vs. Drain Current

Fig.11 Reverse Drain Current

vs. Sourse-Drain Voltage

Resistance vs. Gate Source Voltage

1000

100

1000

T_a=25°C

f=1MHz

V_GS=0V

V_DD=25V

V_GS=4.5V

R_G=10Ω

Pulsed

t_d(off)

t_f

100

C_iss

T_a=25°C

V_DD=25V

I_D= 0.2A

R_G=10Ω

Pulsed

C_rss

C_oss

t_d(on)

t_r

0.1

0.01

0.1

100

0.01

0.5

1.5

DRAIN-CURRENT : I_D[A]

Fig.13 Switching Characteristics

TOTAL GATE CHARGE : Qg [nC]

DRAIN-SOURCE VOLTAGE : V_DS[V]

Fig.14 Typical Capacitance

vs. Drain-Source Voltage

Fig.15 Typical Capacitance

vs. Drain-Source Voltage

www.rohm.com

2011.05 - Rev.B

4/5

Data Sheet

RYE002N05

ꢀ

z Measurement circuits

Pulse width

90%

VGS

VDS

50%

10%

50%

10%

90%

D.U.T.

90%

d(on)

td(off)

toff

Fig.1-1 Switching time measurement circuit

Fig.1-2 Switching waveforms

z Notice

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design

ESD protection circuit.

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5/5

2011.05 - Rev.B

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products speciﬁed in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofﬁce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products speciﬁed in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

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The Products are not designed or manufactured to be used with any equipment, device or

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R1120

RYE002N05TL [ROHM]

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