RZB002P02 [ROHM]
1.2V Drive Pch MOSFET; 1.2V驱动P沟道MOSFET
| 型号： | RZB002P02 |
| 厂家： | 
ROHM |
| 描述： | 1.2V Drive Pch MOSFET |
| 文件： | 总6页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1.2V Drive Pch MOSFET
RZB002P02
Structure
Dimensions (Unit : mm)
Silicon P-channel MOSFET
VMN3
0.22
0.16
(3)
Features
1) High speed switing.
2) Ultra small package(VMN3).
3) Ultra low voltage drive(1.2V drive).
(1)
(2)
0.37
0.17
0.35
0.6
Abbreviated symbol : YK
Application
Switching
Packaging specifications
Inner circuit
(3)
Package
Taping
T2L
Type
Code
Basic ordering unit (pieces)
8000
RZB002P02
Absolute maximum ratings (Ta = 25C)
Parameter
(1)
(2)
(1) GATE
(2) SOURCE
(3) DRAIN
Symbol
VDSS
VGSS
ID
Limits
20
Unit
V
Drain-source voltage
Gate-source voltage
10
V
Continuous
200
mA
mA
mA
mA
mW
C
Drain current
Pulsed
*1
IDP
IS
800
100
Continuous
Pulsed
Source current
(Body Diode)
*1
*2
ISP
800
Power dissipation
PD
150
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to +150
C
*2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
833
Unit
Channel to Ambient
C / W
* Each terminal mounted on a recommended land.
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©2010 ROHM Co., Ltd. All rights reserved.
2010.11 - Rev.A
1/5
Data Sheet
RZB002P02
ꢀ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A
V
Conditions
VGS=10V, VDS=0V
ID=1mA, VGS=0V
Gate-source leakage
-
10
Drain-source breakdown voltage V (BR)DSS
20
-
-
VDS=20V, VGS=0V
VDS=10V, ID=100A
ID=200mA, VGS=4.5V
ID=100mA, VGS=2.5V
ID=100mA, VGS=1.8V
ID=40mA, VGS=1.5V
ID=10mA, VGS=1.2V
ID=200mA, VDS=10V
VDS=10V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
1
A
V
VGS (th)
0.3
-
1.0
-
-
0.8
1.0
1.3
1.6
2.4
-
1.2
1.5
Static drain-source on-state
resistance
*
RDS (on)
-
2.2
-
3.5
-
9.6
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
Ciss
0.2
-
-
-
-
-
-
-
-
-
-
-
-
S
115
10
6
pF
pF
VGS=0V
Coss
Crss
-
-
pF f=1MHz
ID=100mA, VDD 10V
td(on)
-
6
ns
ns
*
VGS=4.5V
tr
-
4
*
*
*
*
*
*
RL=100
Turn-off delay time
Fall time
td(off)
tf
-
17
17
1.4
0.3
0.3
ns
RG=10
-
ns
ID=200mA, VDD 10V
VGS=4.5V
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
-
nC
nC
nC
-
-
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
Is=200mA, VGS=0V
VSD
V
*Pulsed
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2/5
2010.11 - Rev.A
©2010 ROHM Co., Ltd. All rights reserved.
Data Sheet
RZB002P02
ꢀ
0.2
0.15
0.1
0.2
0.15
0.1
1
0.1
Ta=25°C
Pulsed
VDS= -10V
Pulsed
Ta=25°C
Pulsed
VGS= -4.5V
VGS= -10.0V
V
V
GS= -4.5V
GS= -3.2V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
VGS= -2.5V
VGS= -1.2V
VGS= -2.0V
VGS= -1.8V
0.01
VGS= -1.5V
0.05
0
0.001
0.0001
0.05
0
VGS= -1.2V
VGS= -1.0V
VGS= -1.0V
0.8 1
0
0.2
0.4
0.6
0
0.5
1
1.5
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.3 Typical Transfer Characteristics
Fig.1 Typical output characteristics( Ⅰ)
Fig.2 Typical output characteristics( Ⅱ)
10000
1000
100
10000
1000
100
10000
1000
100
Ta=25°C
Pulsed
VGS= -2.5V
VGS= -4.5V
Pulsed
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= -1.2V
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Resistance vs. Drain Current(Ⅱ)
Resistance vs. Drain Current(Ⅲ)
10000
10000
1000
100
10000
VGS= -1.5V
Pulsed
VGS= -1.2V
Pulsed
VGS= -1.8V
Ta=125°C
Pulsed
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
0.001
100
0.001
0.001
0.01
0.1
1
0.01
DRAIN-CURRENT : -ID[A]
0.1
0.01
0.1
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.9 Static Drain-Source On-State
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅵ)
Resistance vs. Drain Current(Ⅴ)
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3/5
2010.11 - Rev.A
©2010 ROHM Co., Ltd. All rights reserved.
ꢀ
RZB002P02
Data Sheet
1
1.0
5
4
3
2
1
0
VGS=0V
Pulsed
VDS= -10V
Pulsed
Ta=25°C
Pulsed
ID= -0.2A
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=-25°C
Ta=25°C
Ta=75°C
Ta=125°
0.1
ID= -0.01A
0.01
0.1
0
0.5
1
1.5
0
2
4
6
8
10
0.01
0.1
1
GATE-SOURCE VOLTAGE : -VGS[V]
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN-CURRENT : -ID[A]
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
100
10
1000
100
10
5
Ta=25°C
f=1MHz
GS=0V
Ta=25°C
td(off
V
DD= -10V
GS=-4.5V
Ciss
V
4
3
2
1
0
V
t
RG=10
Pulsed
Ta=25°C
VDD= -10V
ID= -0.2A
RG=10Ω
Pulsed
Coss
Crss
td(on
t
1
1
0.01
0.1
1
10
100
0.01
0.1
1
0
0.5
1
1.5
DRAIN-SOURCE VOLTAGE : -VDS[V]
TOTAL GATE CHARGE : Qg [nC]
DRAIN-CURRENT : -ID[A]
Fig.13 Switching Characteristics
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Dynamic Input Characteristics
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.11 - Rev.A
Data Sheet
RZB002P02
ꢀ
Measurement circuits
Pulse Width
V
GS
ID
V
V
GS
10%
50%
V
DS
50%
90%
R
L
D.U.T.
10%
90%
10%
90%
RG
V
DD
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate charge measurement circuit
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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5/5
2010.11 - Rev.A
©2010 ROHM Co., Ltd. All rights reserved.
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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R1010
A
相关型号：
RZB002P02T2L
Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA SMALL, VMN3, 3 PIN
ROHM
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