RZR040P01TL [ROHM]
Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN;
| 型号： | RZR040P01TL |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT3, 3 PIN 驱动 |
| 文件： | 总5页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1.5V Drive Pch MOSFET
RZR040P01
zStructure
zDimensions (Unit : mm)
Silicon P-channel MOSFET
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
zFeatures
(
(
)
)
3
1) Low on-resistance.
2) High power package.
3) Low voltage drive. (1.5V)
( )
2
1
0.95 0.95
1.9
0.16
zApplications
(1) Gate
Each lead has same dimensions
Switching
(2) Source
(3) Drain
Abbreviated symbol : YE
zPackaging specifications
zInner circuit
Package
Taping
TL
(3)
Type
Code
Basic ordering unit (pieces)
3000
RZR040P01
∗2
(1)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Symbol
VDSS
VGSS
ID
Limits
Unit
V
∗1
−12
10
(1) Gate
(2) Source
(3) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Gate-source voltage
V
(2)
Continuous
Pulsed
4
16
A
Drain current
∗1
IDP
A
Source current
(Body diode)
Continuous
Pulsed
IS
−0.8
−16
1.0
A
∗1
∗2
ISP
A
Total power dissipation
Channel temperature
PD
W
°C
°C
Tch
Tstg
150
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
−55 to +150
∗2 When mounted on a ceramic board
zThermal resistance
Parameter
Symbol
Rth(ch-a) ∗
Limits
125
Unit
Channel to ambient
∗ When mounted on a ceramic board.
°C / W
www.rohm.com
2009.06 - Rev.A
1/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
RZR040P01
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS= 10V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS −12
Zero gate voltage drain current
V
µA
V
ID= −1mA, VGS=0V
IDSS
−
−
−
−1
−1.0
30
42
60
110
−
−
−
−
−
−
−
−
−
−
−
VDS= −12V, VGS=0V
DS= −6V, ID= −1mA
Gate threshold voltage
VGS (th) −0.3
V
−
−
−
−
6.5
22
30
40
55
−
2350
310
280
11
70
380
210
30
4.0
3.5
mΩ ID= −4A, VGS= −4.5V
mΩ ID= −2A, VGS= −2.5V
mΩ ID= −2A, VGS= −1.8V
mΩ ID= −0.8A, VGS= −1.5V
∗
Static drain-source on-state
resistance
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
S
VDS= −6V, ID= −4A
VDS= −6V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
VGS=0V
f=1MHz
∗
∗
∗
∗
∗
∗
∗
V
DD −6V
I
D
= −2A
t
r
V
R
GS= −4.5V
Turn-off delay time
Fall time
td (off)
tf
L
3Ω
=10Ω
RG
Total gate charge
Gate-source charge
Qg
nC VDD −6V
RL
1.5Ω
ID= −4A
Qgs
Qgd
−
−
nC
RG
=10Ω
VGS= −4.5V
Gate-drain charge
nC
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
IS= −4A, VGS=0V
Unit
∗
Forward voltage
V
SD
−
−
−1.2
V
∗Pulsed
www.rohm.com
2009.06 - Rev.A
2/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
RZR040P01
Data Sheet
zElectrical characteristics curves
10
10
8
10
1
Ta=25°C
Pulsed
VDS= -6V
Pulsed
VGS= -4.5V
GS= -2.5V
GS= -1.8V
GS= -1.5V
V
VGS= -4.5V
GS= -2.5V
GS= -1.8V
8
6
4
2
0
V
V
V
V
6
VGS= -1.5V
VGS= -1.2V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
VGS= -1.3V
4
VGS= -1.2V
0.01
0.001
2
VGS= -1.1V
Ta=25°C
Pulsed
0
0
2
4
6
8
10
0
0.5
1
1.5
2
10
1
0
0.2
0.4
0.6
0.8
1
10
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.2 Typical output characteristics(
)
Ⅱ
Fig.3 Typical Transfer Characteristics
Fig.1 Typical output characteristics(
)
Ⅰ
1000
1000
100
10
1000
100
10
VGS= -4.5V
Pulsed
Ta=25°C
Pulsed
VGS= -2.5V
VGS= -4.5V
GS= -2.5V
GS= -1.8V
VGS= -1.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Pulsed
V
V
100
10
1
1
1
0.1
1
0.1
1
10
0.1
1
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(
)
)
)
Ⅲ
Ⅰ
Ⅱ
1000
100
10
1000
100
10
10
1
VGS= -1.5V
Pulsed
VGS= -1.8V
Pulsed
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
0.01
1
1
0.1
1
10
0.1
1
0
0.2
0.4
0.6
0.8
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(
)
Ⅳ
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
)
Ⅴ
www.rohm.com
2009.06 - Rev.A
3/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
RZR040P01
Data Sheet
100
10
1
200
150
100
50
5
4
3
2
1
0
VDS= -6V
Pulsed
Ta=25°C
Pulsed
Ta=25°C
DD= -6V
ID= -4.0A
G=10Ω
Pulsed
V
R
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
ID= -2.0A
ID= -4.0A
0
0
5
10
0.1
1
10
0
5
10
15
20
25
30
35
TOTAL GATE CHARGE : Qg [nC]
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN CURRENT : -ID[A]
Fig.10 Static Drain-Source On-State
Fig.12 Dynamic Input Characteristics
Fig.11 Forward Transfer Admittance
vs. Drain Current
Resistance vs. Gate Source Voltage
1000
100
10
10000
1000
100
Ta=25°C
f=1MHz
VGS=0V
tf
td(off)
Ciss
td(on)
Crss
Coss
tr
Ta=25°C VDD= -6V
GS=-4.5V RG=10Ω
V
Pulsed
1
0.01
0.1
1
10
100
0.01
0.1
1
10
GATE-SOURCE VOLTAGE : -VDS[V]
DRAIN-CURRENT : -ID[A]
Fig.14 Switching Characteristics
ꢀ
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
zMeasurement circuits
Pulse Width
I
D
VDS
VGS
V
V
GS
10%
50%
R
L
50%
90%
D.U.T.
10%
10%
90%
V
DD
RG
90%
tr
DS td(on)
td(off)
tf
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
I
D
VDS
VGS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
RG
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
zNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
2009.06 - Rev.A
4/4
c
○ 2009 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
R0039
A
©2020 ICPDF网 联系我们和版权申明