S2303 [ROHM]
S2303是SiC功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？电子基础;
| 型号： | S2303 |
| 厂家： | 
ROHM |
| 描述： | S2303是SiC功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？电子基础 电子 开关 |
| 文件： | 总12页 (文件大小：649K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S2303
Datasheet
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
1200
80m
40A*1
Features
Inner circuit
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
(2)
(1) Gate
(2) Drain
(3) Source
*1
(1)
*1 Body Diode
5) Simple to drive
(3)
Application
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VDSS
Value
1200
Unit
Drain - Source voltage
V
A
*1
Tc = 25°C
Continuous drain current
40
ID
*2
Pulsed drain current
140
A
ID,pulse
VGSS
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300nsec)
Junction temperature
V
6 to 22
10 to 26
175
*3
V
VGSS_surge
Tj
°C
°C
Tstg
Range of storage temperature
55 to 175
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
1/11
Datasheet
S2303
Electrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
1200
-
Zero gate voltage
drain current
IDSS
Tj = 25°C
-
1
2
10
-
A
Tj = 150°C
-
-
IGSS
IGSS
VGS = 22V, VDS = 0V
VGS = 6V, VDS = 0V
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
-
100
100
4.0
nA
nA
V
-
-
VGS (th) VDS = VGS, ID = 4.4mA
1.6
2.8
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
*4
Tj = 25°C
RDS(on)
-
-
-
80
115
9.0
111
m
Tj = 125°C
-
-
RG
Gate input resistance
f = 1MHz, open drain
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
2/11
Datasheet
S2303
Electrical characteristics (Ta = 25°C)
Values
Typ.
3.7
Parameter
Symbol
Conditions
Unit
S
Min.
Max.
*4
VDS = 10V, ID = 10A
VGS = 0V
Transconductance
-
-
-
-
-
-
-
-
gfs
Ciss
Coss
Crss
Input capacitance
2070
80
VDS = 800V
f = 1MHz
Output capacitance
pF
pF
Reverse transfer capacitance
20
VGS = 0V
VDS = 0V to 800V
Effective output capacitance,
energy related
Co(er)
-
99
-
*4
VDD = 400V, ID = 10A
VGS = 18V/0V
RL = 40
Turn - on delay time
Rise time
-
-
-
-
23
39
79
28
-
-
-
-
td(on)
*4
tr
ns
*4
Turn - off delay time
Fall time
td(off)
*4
RG = 0
tf
VDD = 600V, ID = 10A
VGS = 18V/0V
*4
Turn - on switching loss
Turn - off switching loss
-
-
255
27
-
-
Eon
Eoff
RG = 0L = 750uH
*Eon includes diode
reverse recovery
J
*4
Gate Charge characteristics (Ta = 25°C)
Values
Typ.
110
24
Parameter
Symbol
Conditions
Unit
Min.
Max.
*4
VDD = 400V
ID = 10A
Total gate charge
-
-
-
-
-
-
-
-
Qg
*4
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
nC
V
Qgs
*4
VGS = 18V
38
Qgd
V(plateau) VDD = 400V, ID = 10A
9.7
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
3/11
Datasheet
S2303
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
A
Min.
-
Max.
40
Inverse diode continuous,
forward current
*1
-
-
IS
Tc = 25°C
Inverse diode direct current,
pulsed
*2
-
140
A
ISM
*4
VGS = 0V, IS = 10A
Forward voltage
-
-
-
-
4.7
51
-
-
-
-
V
ns
nC
A
VSD
*4
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
IF = 10A, VR = 600V
*4
194
7.6
Qrr
di/dt = 650A/s
*4
Irrm
*1 For Tj=175°C and thermal dissipation to ambience of 262W or more.
Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
4/11
Datasheet
S2303
Electrical characteristic curves
Fig.1 Typical Output Characteristics(I)
Fig.2 Typical Output Characteristics(II)
40
20
15
10
5
20V
Ta = 25ºC
Pulsed
20V
18V
14V
18V
16V
Ta = 25ºC
Pulsed
30
20
10
0
14V
16V
12V
12V
10V
10V
VGS= 8V
VGS= 8V
8
0
0
2
4
6
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150ºC Typical Output
Fig.4 Tj = 150ºC Typical Output
Characteristics(I)
Characteristics(II)
20
40
14V
20V
20V
18V
16V
18V
16V
15
10
5
30
12V
14V
10V
12V
10V
20
10
0
VGS= 8V
VGS= 8V
Ta = 150ºC
Pulsed
Ta = 150ºC
Pulsed
0
0
1
2
3
4
5
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
5/11
Datasheet
S2303
Electrical characteristic curves
Fig.5 Typical Transfer Characteristics (I)
Fig.6 Typical Transfer Characteristics (II)
40
30
20
10
0
100
VDS = 10V
Pulsed
VDS = 10V
Pulsed
10
1
0.1
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
0.01
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.7 Gate Threshold Voltage
Fig.8 Transconductance vs. Drain Current
vs. Junction Temperature
6
10
VDS = 10V
ID = 4.4mA
VDS = 10V
Pulsed
5
4
3
2
1
0
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0.1
1
10
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Drain Current : ID [A]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
6/11
Datasheet
S2303
Electrical characteristic curves
Fig.9 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.10 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.32
0.20
0.16
0.12
0.08
0.04
0.00
VGS = 18V
Pulsed
Ta = 25ºC
Pulsed
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
ID = 20A
ID = 20A
ID = 10A
ID = 10A
8
10
12
14
16
18
20
22
-50
0
50
100
150
200
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current
1
0.1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
VGS = 18V
Pulsed
0.01
1
10
Drain Current : ID [A]
100
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
7/11
Datasheet
S2303
Electrical characteristic curves
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
10000
Fig.13 Coss Stored Energy
35
Ta = 25ºC
30
Ciss
1000
25
20
15
10
5
Coss
100
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
0
1
0
200
400
600
800
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.14 Switching Characteristics
Fig.15 Dynamic Input Characteristics
10000
1000
100
10
20
Ta = 25ºC
Ta = 25ºC
VDD = 400V
ID = 10A
VDD = 400V
VGS = 18V
RG = 0
15
Pulsed
tf
Pulsed
td(off)
10
5
tr
td(on)
1
0
0.1
1
10
100
0
20
40
60
80
100
120
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
8/11
Datasheet
S2303
Electrical characteristic curves
Fig.16 Typical Switching Loss
vs. Drain - Source Voltage
500
Fig.17 Typical Switching Loss
vs. Drain Current
1600
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG=0
L=750H
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0
L=750H
400
300
200
100
0
1200
800
Eon
Eon
400
Eoff
Eoff
0
0
10
20
30
40
200
400
600
800
1000
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.18 Typical Switching Loss
vs. External Gate Resistance
1200
Ta = 25ºC
VDD=600V
ID=10A
VGS = 18V/0V
L=750H
800
400
0
Eon
Eoff
0
5
10
15
20
25
30
External Gate Resistance : RG []
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
9/11
Datasheet
S2303
Electrical characteristic curves
Fig.19 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
Fig.20 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
100
10
VGS = 0V
Pulsed
Ta = 25ºC
di / dt = 650A / us
VR = 600V
VGS = 0V
10
1
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
0.1
Ta = 25ºC
0.01
1
10
100
0
1
2
3
4
5
6
7
8
Source - Drain Voltage : VSD [V]
Inverse Diode Forward Current : IS [A]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
10/11
Datasheet
S2303
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Switching Energy Measurement Circuit
Eon = ID×VDS
Eoff = ID×VDS
Vsurge
Same type
device as
D.U.T.
Irr
VDS
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.04 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2015 ROHM Co., Ltd. All rights reserved.
R1102
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