S4107 [ROHM]

S4107是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板应用实例罗姆SiC器件什么是SiC？电子基础;


型号：	S4107
厂家：	ROHM
描述：	S4107是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板应用实例罗姆SiC器件什么是SiC？电子基础电子开关脉冲晶体管
文件：	总12页 (文件大小：802K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

S4107

N-channel SiC power MOSFET bare die

Datasheet

V_DSS

1200V

105mΩ

24A

R_DS(on)(Typ.)

I_D

lInner circuit

lFeatures

(1) Gate

(2) Drain

(3) Source

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

*1 Body Diode

5) Simple to drive

lApplication

・Solar inverters

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

lAbsolute maximum ratings (T_a= 25°C)

Parameter

Symbol

V_DSS

Value

1200

Unit

Drain - Source voltage

T_c= 25°C

Continuous drain current

I_D

Pulsed drain current

I_D,pulse

V_GSS

Gate - Source voltage (DC)

Gate - Source Surge Voltage (t_surge< 300nsec)

Recommended Drive Voltage

Junction temperature

-4 to 22

-4 to 26

0 / 18

V_{GSS_surge}

V_{GS_op}

T_j

175

°C

T_stg

Range of storage temperature

-55 to +175

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TSQ50152-S4107

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Datasheet

S4107

lElectrical characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Drain - Source breakdown

voltage

V_(BR)DSSV_GS= 0V, I_D= 1mA

V_DS= 1200V, V_GS= 0V

1200

Zero gate voltage

drain current

I_DSS

T_j= 25°C

μA

T_j= 150°C

I_GSS+

I_GSS-

V_GS= +22V, V_DS= 0V

V_GS= -4V, V_DS= 0V

Gate - Source leakage current

Gate threshold voltage

100

-100

5.6

V_{GS (th)}V_DS= 10V, I_D= 3.81mA

2.7

V_GS= 18V, I_D= 7.6A

Static drain - source

on - state resistance

T_j= 25°C

R_DS(on)

105

158

137

mΩ

T_j= 125°C

R_G

Gate input resistance

f = 1MHz, open drain

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Datasheet

S4107

lElectrical characteristics (T_a= 25°C)

Values

Typ.

3.4

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_DS= 10V, I_D= 7.6A

V_GS= 0V

Transconductance

g_fs

C_iss

C_oss

C_rss

Input capacitance

574

V_DS= 800V

f = 1MHz

Output capacitance

Reverse transfer capacitance

V_GS= 0V

V_DS= 0V to 600V

Effective output capacitance,

energy related

C_o(er)

159

V_DD= 400V, I_D= 7.6A

V_GS= 18V/0V

R_L= 53Ω

Turn - on delay time

Rise time

t_d(on)

t_r

Turn - off delay time

Fall time

t_d(off)

R_G= 0Ω

t_f

V_DD= 600V, I_D=7.6A

V_GS= 18V/0V

R_G= 0Ω L=750μH

*E_onincludes diode

reverse recovery

Turn - on switching loss

Turn - off switching loss

159

E_on

μJ

E_off

lGate Charge characteristics (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_DD= 600V

I_D= 7.6A

Total gate charge

Q_g

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Q_gs

V_GS= 18V

Q_gd

V_(plateau)V_DD= 600V, I_D= 7.6A

9.6

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Datasheet

S4107

lBody diode electrical characteristics (Source-Drain) (T_a= 25°C)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Body diode continuous,

forward current

I_S

T_c= 25°C

Body diode direct current,

pulsed

I_SM

V_GS= 0V, I_S= 7.6A

Forward voltage

3.2

V_SD

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

t_rr

I_F=7.6A, V_R= 600V

di/dt = 1100A/μs

Q_rr

6.5

I_rrm

*1 For T_j= 175°C and thermal dissipation to avbience of 134W or more.

Limited only by maximum temperature allowed.

*2 PW  10s, Duty cycle  1%

*3 Example of acceptable Vgs waveform

*4 Please be advised not to use SiC-MOSFETs with V_gsbelow 13V as doing so may cause

thermal runaway.

*5 Pulsed

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lElectrical characteristic curves

Fig.1 Typical Output Characteristics(I)

Fig.2 Typical Output Characteristics(II)

20V

18V

20V

T_a= 25ºC

Pulsed

12V

18V

16V

14V

16V

T_a= 25ºC

Pulsed

12V

10V

V_GS= 8V

Drain - Source Voltage : V_DS[V]

Fig.3 T_j= 150ºC Typical Output

Characteristics(I)

Fig.4 T_j= 150ºC Typical Output

Characteristics(II)

20V

12V

18V

12V

18V

16V

14V

16V

10V

14V

10V

V_GS= 8V

T_a= 150ºC

Pulsed

T_a= 150ºC

Pulsed

Drain - Source Voltage : V_DS[V]

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lElectrical characteristic curves

Fig.5 Typical Transfer Characteristics (I)

Fig.6 Typical Transfer Characteristics (II)

100

V_DS= 10V

Pulsed

V_DS= 10V

Pulsed

T_a= 150ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

T_a= 150ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

0.1

0.01

10 12 14 16 18 20

Gate - Source Voltage : V_GS[V]

Fig.7 Gate Threshold Voltage

Fig.8 Transconductance vs. Drain Current

vs. Junction Temperature

V_DS= 10V

I_D= 3.81mA

V_DS= 10V

Pulsed

T_a= 150ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

0.1

-50

100

150

200

Junction Temperature : T_j[ºC]

Drain Current : I_D[A]

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Datasheet

S4107

lElectrical characteristic curves

Fig.9 Static Drain - Source On - State

Fig.10 Static Drain - Source On - State

Resistance vs. Gate - Source Voltage

Resistance vs. Junction Temperature

0.4

0.35

0.3

V_GS= 18V

Pulsed

T_a= 25ºC

Pulsed

0.35

0.3

0.25

0.2

0.25

0.2

I_D= 16A

I_D= 7.6A

0.15

0.1

0.15

0.1

I_D= 7.6A

0.05

-50

100

150

200

Gate - Source Voltage : V_GS[V]

Junction Temperature : T_j[ºC]

Fig.11 Static Drain - Source On - State

Resistance vs. Drain Current

0.1

T_a= 150ºC

T_a= 125ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

V_GS= 18V

Pulsed

0.01

100

Drain Current : I_D[A]

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Datasheet

S4107

lElectrical characteristic curves

Fig.12 Typical Capacitance

vs. Drain - Source Voltage

10000

Fig.13 C_ossStored Energy

T_a= 25ºC

C_iss

1000

100

C_oss

C_rss

T_a= 25ºC

f = 1MHz

V_GS= 0V

200

400

600

800

0.1

100

1000

Drain - Source Voltage : V_DS[V]

Fig.14 Switching Characteristics

Fig.15 Dynamic Input Characteristics

10000

1000

100

T_a= 25ºC

V_DD= 600V

I_D= 7.6A

V_DD= 400V

V_GS= 18V

R_L= 53Ω

R_G= 0Ω

Pulsed

t_f

Pulsed

t_d(off)

t_r

t_d(on)

0.1

100

Drain Current : I_D[A]

Total Gate Charge : Q_g[nC]

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Datasheet

S4107

lElectrical characteristic curves

Fig.16 Typical Switching Loss

vs. Drain - Source Voltage

300

Fig.17 Typical Switching Loss

vs. Drain Current

600

T_a= 25ºC

V_DD=600V

V_GS= 18V/0V

R_G=0Ω

T_a= 25ºC

I_D=10A

V_GS= 18V/0V

R_G=0Ω

270

240

210

180

150

120

L=750μH

400

E_on

200

E_on

E_off

200

400

600

800

1000

Drain - Source Voltage : V_DS[V]

Drain Current : I_D[A]

Fig.18 Typical Switching Loss

vs. External Gate Resistance

600

T_a= 25ºC

V_DD=600V

I_D=7.6A

V_GS= 18V/0V

L=750μH

400

200

E_on

E_off

External Gate Resistance : R_G[Ω]

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Datasheet

S4107

lElectrical characteristic curves

Fig.19 Body Diode Forward Current

vs. Source - Drain Voltage

100

Fig.20 Reverse Recovery Time

vs.Body Diode Forward Current

1000

100

T_a= 25ºC

di / dt = 1100A / µs

V_R= 600V

V_GS= 0V

Pulsed

T_a= 150ºC

T_a= 75ºC

T_a= 25ºC

T_a= -25ºC

0.1

0.01

100

Source - Drain Voltage : V_SD[V]

Body Diode Forward Current : I_S[A]

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Datasheet

S4107

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2ꢀSwitching Waveforms

Fig.2-2 Gate Charge Waveform

Fig.3-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.3-1 Switching Energy Measurement Circuit

E_on= I_D×V_DS

E_off= I_D×V_DS

V_surge

Same type

device as

D.U.T.

I_rr

V_DS

D.U.T.

I_D

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

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R1102

S4107 [ROHM]

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