SCS108AG [ROHM]
SiC Schottky Barrier Diode; SiC肖特基势垒二极管
| 型号： | SCS108AG |
| 厂家： | 
ROHM |
| 描述： | SiC Schottky Barrier Diode |
| 文件： | 总4页 (文件大小：1038K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiC Schottky Barrier Diode
SCS108AG
zApplications
zDimensions (Unit : mm)
zStructure
Switching power supply
zFeatures
1)Shorter recovery time
2)Reduced temperature dependence
3)High-speed switching possible
zConstruction
Silicon carbide epitaxial planer type
ROHM : ＴO-220AC 2L
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive)
Reverse voltage (DC)
600
600
V
Continuous forward current(*1)
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
IF
8
29
A
IFSM
Tj
A
150
°C
°C
Storage temperature
−55 to +150
Tstg
(*1)Tc=120°C max
(*2)PW=8.3ms sinusoidal
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
VDC
VF
Min.
Typ.
-
Max.
Unit
V
Conditions
DC blocking voltage
Forward voltage
600
-
1.7
160
-
IR=0.16mA
IF=8A
-
-
-
-
-
-
-
1.5
1.6
345
38
15
15
-
V
IR
Reverse current
µA
pF
VR=600V
VR=1V,f=1MHz
Total capacitance
C
-
pF
VR=600V,f=1MHz
VR=400V,di/dt=300A/µs
VR=400V,di/dt=300A/µs
junction to case
Total capacitive charge
Switching time
Qc
tc
-
nC
ns
-
Thermal resistance
Rth(j-c)
2.0
°C/W
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2011.04 - Rev.A
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Data Sheet
SCS108AG
ꢀ
Fig.2 VF-IF Characteristics
Fig.1 VF-IF Characteristics
12
100
pulsed
pulsed
10
Ta= 125°C
Ta= 75°C
8
1
0.1
Ta= 25°C
Ta=-25°C
4
0.01
0.001
Ta= 25°C
Ta=-25°C
Ta= 125°C
Ta= 75°C
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
600
1000
FORWARD VOLTAGE : VF (V)
FORWARD VOLTAGE : VF (V)
Fig.3 VR-IR Characteristics
Fig.4 VR-Ct Characteristics
1000
100000
10000
1000
100
Ta= 125°C
Ta= 75°C
100
10
1
Ta= 25°C
10
Ta=25°C
f=1MHz
Ta=-25°C
1
0
200
400
0.01
0.1
1
10
100
1000
REVERSE VOLTAGE : VR [V]
REVERSE VOLTAGE: VR (V)
Fig.6 Power Dissipation
Fig.5 Thermal Resistance vs Pulse Width
70
10
Ta=25°C
Single Pulse
60
50
40
30
20
10
0
1
0.1
0.01
0.00001 0.0001 0.001 0.01
0
30
60
90
120
150
0.1
1
10
100
CASE TEMPERATURE ： Tc (℃)
PULSE WIDTH : Pw( s )
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.04 - Rev.A
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Data Sheet
SCS108AG
ꢀ
Fig.8 Io-Pf Characteristics
Fig.7 Derating Curve Ip-Tc
35
30
25
20
15
10
5
45
Duty=0.1
40
35
30
25
20
15
10
5
D.C.
Duty=0.8
Duty=0.5
Duty=0.2
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.8
D.C.
0
0
0
5
10
15
0
30
60
90
120
150
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)
CASE TEMPARATURE : Tc (℃)
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2011.04 - Rev.A
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R1120A
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