SCT2H12NZ [ROHM]

SCT2H12NZ是1700V 3.7A的Nch SiC功率MOSFET。;


型号：	SCT2H12NZ
厂家：	ROHM
描述：	SCT2H12NZ是1700V 3.7A的Nch SiC功率MOSFET。
文件：	总16页 (文件大小：1110K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SCT2H12NZ

N-channel SiC power MOSFET

Datasheet

lOutline

TO-3PFM

V_DSS

1700V

1.15W

3.7A

R_DS(on)(Typ.)

I_D

P_D

35W

lFeatures

lInner circuit

1) Low on-resistance

2) Fast switching speed

3) Long creepage distance

4) Simple to drive

(1) Gate

(2) Drain

(3) Source

*1 Body Diode

5) Pb-free lead plating ; RoHS compliant

lPackaging specifications

Packing

Tube

Reel size (mm)

lApplication

Tape width (mm)

Type

・Auxilialy power supplies

・Switch mode power supplies

Basic ordering unit (pcs)

Taping code

Marking

C11

SCT2H12NZ

lAbsolute maximum ratings (T_vj= 25°C unless otherwise spesified)

Parameter

Drain - Source voltage

Symbol

V_DSS

Value

1700

Unit

T_c= 25°C

3.7

I_D

Continuous drain current

T_c= 100°C

2.6

I_D

Pulsed drain current

9.2

I_D,pulse

V_GSS

Gate - Source voltage (DC)

-6 to 22

-10 to 26

Gate - Source surge voltage (t_surge<300nsec)

Power dissipation (T_c= 25°C)

V_{GSS_surge}

P_D

°C

T_vj

Virtual Junction temperature

175

T_stg

Range of storage temperature

-55 to +175

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Datasheet

lElectrical characteristics (T_vj= 25°C unless otherwise spesified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

Drain - Source breakdown

voltage

V_(BR)DSSV_GS= 0V, I_D= 1mA

V_DS= 1700V, V_GS= 0V

1700

Zero gate voltage

drain current

I_DSS

T_vj= 25°C

0.1

0.2

A

T_vj= 150°C

I_GSS+

I_GSS-

V_GS= +22V, V_DS= 0V

V_GS= -6V, V_DS= 0V

Gate - Source leakage current

Gate threshold voltage

100

-100

4.0

V_{GS (th)}V_DS= V_GS, I_D= 0.41mA

1.6

2.8

*1 Limited by maximum T_vjand for Max. R_thJC

*2 PW  10s, Duty cycle  1%

*3 Example of acceptable V_GSwaveform

*4 Pulsed

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Datasheet

lElectrical characteristics (T_vj= 25°C unless otherwise spesified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_GS= 18V, I_D= 1.1A

T_vj= 25°C

Static drain - source

on - state resistance

1.15

1.71

1.50

R_DS(on)

T_vj= 125°C

R_G

Gate input resistance

Transconductance

f = 1MHz, open drain

V_DS= 10V, I_D= 1.1A

V_GS= 0V

0.4

184

g_fs

C_iss

C_oss

C_rss

Input capacitance

V_DS= 800V

Output capacitance

Reverse transfer capacitance

f = 1MHz

V_GS= 0V

Effective output capacitance,

energy related

C_o(er)

V_DS= 0V to 800V

V_DD= 500V, I_D= 1.1A

V_GS= 18V/0V

R_L= 455W

Turn - on delay time

Rise time

t_d(on)

t_r

Turn - off delay time

Fall time

t_d(off)

R_G= 0W

t_f

V_DD= 800V, I_D=1.1A

V_GS= 18V/0V

Turn - on switching loss

Turn - off switching loss

E_on

R_G= 0Ω, L=2mH

*E_onincludes diode

reverse recovery

J

E_off

lGate Charge characteristics (T_vj= 25°C unless otherwise spesified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

V_DD= 500V

Total gate charge

Q_g

I_D= 1A

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Q_gs

V_GS= 18V

Q_gd

V_(plateau)V_DD= 500V, I_D= 1A

10.5

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Datasheet

lBody diode electrical characteristics (Source-Drain) (T_vj= 25°C unless otherwise spesified)

Values

Parameter

Symbol

Conditions

Unit

Min.

Typ.

Max.

3.7

Inverse diode continuous,

forward current

I_S

T_c= 25°C

Inverse diode direct current,

pulsed

9.2

I_SM

V_GS= 0V, I_S= 1.1A

Forward voltage

4.3

V_SD

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

t_rr

I_F= 1.1A, V_R= 800V

Q_rr

di/dt = 300A/s

1.1

I_rrm

lThermal resistance

Values

Typ.

Parameter

Symbol

R_thJC

Unit

K/W

Min.

Max.

4.32

Thermal resistance, junction - case

3.32

lTypical Transient Thermal Characteristics

Symbol

R_th1

Value

816m

1939m

567m

Unit

Symbol

C_th1

Value

Unit

127

1.64m

64.5m

R_th2

C_th2

K/W

Ws/K

R_th3

C_th3

R_th,n

R_th1

T_j

T_c

P_D

C_th1

C_th2

C_th,n

T_a

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Datasheet

lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

100

Operation in this area

is limited by R_DS(ON)

PW = 100s

PW = 1ms

PW = 10ms

0.1

0.01

PW = 100ms

T_c= 25ºC

Single Pulse

0.1

100

1000 10000

100

150

200

Case Temperature : T_c[ºC]

Drain - Source Voltage : V_DS[V]

Fig.3 Typical Transient Thermal

Impedance vs. Pulse Width

T_c= 25ºC

Single Pulse

0.1

0.0001 0.001

0.01

0.1

Pulse Width : PW [s]

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Datasheet

lElectrical characteristic curves

Fig.5 Typical Output Characteristics(II)

Fig.4 Typical Output Characteristics(I)

3.5

1.8

1.6

1.4

1.2

T_vj= 25ºC

Pulsed

14V

20V

18V

16V

14V

20V

18V

2.5

T_vj= 25ºC

Pulsed

16V

12V

10V

0.8

0.6

0.4

0.2

1.5

10V

V_GS=8V

0.5

V_GS=8V

Drain - Source Voltage : V_DS[V]

Fig.6 T_vj= 150ºC Typical Output

Characteristics(I)

Fig.7 T_vj= 150ºC Typical Output

Characteristics(II)

1.8

3.5

1.6

1.4

1.2

12V

10V

20V

18V

16V

14V

20V

18V

16V

14V

12V

2.5

10V

0.8

0.6

0.4

0.2

1.5

V_GS= 8V

0.5

T_vj= 150ºC

Pulsed

T_vj= 150ºC

Pulsed

Drain - Source Voltage : V_DS[V]

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Datasheet

lElectrical characteristic curves

Fig.8 Typical Transfer Characteristics (I)

Fig.9 Typical Transfer Characteristics (II)

2.5

V_DS= 10V

Pulsed

V_DS= 10V

Pulsed

0.1

1.5

T_vj= 175ºC

T_vj= 125ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

T_vj= 175ºC

T_vj= 125ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

0.01

0.001

0.5

10 12 14 16 18 20

Gate - Source Voltage : V_GS[V]

Fig.10 Gate Threshold Voltage

vs. Virtual Junction Temperature

Fig.11 Transconductance

vs. Drain Current

V_DS= 10V

Pulsed

V_DS= V_GS

I_D= 0.41mA

4.5

3.5

0.1

2.5

T_vj= 175ºC

T_vj= 125ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

1.5

0.5

0.01

0.1

-50

100

150

200

Drain Current : I_D[A]

Virtual Junction Temperature : T_vj[ºC]

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Datasheet

lElectrical characteristic curves

Fig.12 Static Drain - Source On - State

Resistance vs. Gate - Source Voltage

Fig.13 Static Drain - Source On - State

Resistance vs. Virtual Junction

Temperature

2.5

V_GS= 18V

Pulsed

T_vj= 25ºC

Pulsed

2.5

I_D= 2.2A

I_D= 1.1A

1.5

I_D= 1.1A

0.5

-50

100

150

200

Gate - Source Voltage : V_GS[V]

Virtual Junction Temperature : T_vj[ºC]

Fig.14 Static Drain - Source On - State

Resistance vs. Drain Current

V_GS= 18V

Pulsed

T_vj= 175ºC

T_vj= 125ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

0.1

Drain Current : I_D[A]

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Datasheet

lElectrical characteristic curves

Fig.15 Typical Capacitance

vs. Drain - Source Voltage

Fig.16 Coss Stored Energy

1000

100

T_vj= 25ºC

C_iss

C_oss

T_vj= 25ºC

f = 1MHz

V_GS= 0V

C_rss

200

400

600

800

1000

0.1

100

1000

Drain - Source Voltage : V_DS[V]

Fig.18 Dynamic Input Characteristics

Fig.17 Switching Characteristics

1000

100

T_vj= 25ºC

V_DD=500V

I_D= 1A

V_DD= 500V

V_GS= 18V

R_G= 0Ω

t_f

Pulsed

t_d(off)

t_r

t_d(on)

0.1

10 12 14 16

Total Gate Charge : Q_g[nC]

Drain Current : I_D[A]

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Datasheet

lElectrical characteristic curves

Fig.19 Typical Switching Loss

vs. Drain - Source Voltage

Fig.20 Typical Switching Loss

vs. Drain Current

250

100

T_vj= 25ºC

V_DD=800V

V_GS= 18V/0V

R_G= 0Ω

T_vj= 25ºC

I_D=1.1A

V_GS= 18V/0V

R_G= 0Ω

200

150

100

E_on

L=2mH

E_on

E_off

500

600

700

800

900 1000 1100

Drain - Source Voltage : V_DS[V]

Drain - Current : I_D[A]

Fig.21 Typical Switching Loss

vs. External Gate Resistance

140

T_vj= 25ºC

V_DD=800V

I_D=1.1A

E_on

120

100

V_GS= 18V/0V

L=2mH

E_off

100

External Gate Resistance : R_G[Ω]

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Datasheet

lElectrical characteristic curves

Fig.22 Inverse Diode Forward Current

vs. Source - Drain Voltage

Fig.23 Reverse Recovery Time

vs.Inverse Diode Forward Current

1000

100

V_GS= 0V

Pulsed

T_vj= 25ºC

di / dt = 300A / s

V_R= 800V

V_GS= 0V

Pulsed

0.1

T_vj= 175ºC

T_vj= 125ºC

T_vj= 75ºC

T_vj= 25ºC

T_vj= -25ºC

0.01

Source - Drain Voltage : V_SD[V]

Inverse Diode Forward Current : I_S[A]

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Datasheet

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit

Fig.1-2ꢀSwitching Waveforms

Fig.2-2 Gate Charge Waveform

Fig.3-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.3-1 Switching Energy Measurement Circuit

E_on= I_D×V_DS

E_off= I_D×V_DS

V_surge

Same type

device as

D.U.T.

I_rr

V_DS

D.U.T.

I_D

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

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Datasheet

lPackage Dimensions

TO-3PFM

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Datasheet

lDie Bonding Layout

: Die position

・Front view of the packaging.

・Dimensions are design values.

・If the heat sink is to be installed, it should be in contact with the die bonding point.

Unit: mm

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

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non-compliance with any applicable laws or regulations.

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you must abide by the procedures and provisions stipulated in all applicable export laws and

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R1107

Daattaasshheeeett

General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales

representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

SCT2H12NZ [ROHM]

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